Nanoscale patterning method and integrated device for electronic apparatus manufactured therefrom

Patent metadata

Field	Value
Publication number	US-9812333-B2
Application number	US-201414583492-A
Country	US
Kind code	B2
Filing date	Dec 26, 2014
Priority date	Dec 26, 2013
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

Provided is a nanoscale patterning method using self-assembly, wherein nanoscale patterns having desirable shapes such as a lamella shape, a cylinder shape, and the like, may be formed by using a self-assembly property of a block copolymer, and low segment interaction caused in a structure of 10 nm or less which is a disadvantage of the block copolymer may be prevented. In addition, even though single photolithography is used, pattern density may double as that of the existing nano patterns, and pitch and cycle of the patterns may be controlled to thereby be largely utilized for electronic apparatuses requiring high integration of circuits such as a semiconductor device, and the like.

First claim

What is claimed is:

1. A nanoscale patterning method using self-assembly, comprising:
a) a step of depositing an organic photoresist layer on a surface of a substrate to form the organic photoresist layer directly contacted with the substrate, and forming organic photoresist patterns on the substrate by using lithography;
b) a step of forming a block copolymer thin film including two or more kinds of domain blocks on the substrate including the organic photoresist patterns formed thereon;
c) a step of selectively removing any one domain block from the block copolymer thin film;
d) a step of forming an inorganic spacer layer on a surface of the block copolymer thin film of the step c); and
e) a step of removing the remaining block copolymer thin film of the step d) and the organic photoresist patterns,
wherein the block copolymer is obtained by polymerizing at least one hydrophilic domain block and at least one hydrophobic domain block, and
wherein when it is assumed that a molecular weight of the entire block copolymer is 100, a molecular weight ratio of each domain block is 20 to 80 (hydrophilic domain block):80 to 20 (hydrophobic domain block).

2. The nanoscale patterning method of claim 1 , wherein the step b) includes:
b1) a step of forming the block copolymer thin film on a region exposed through the photoresist patterns; and
b2) a step of forming a self-assembled nanostructure in the region exposed through the photoresist patterns by annealing the block copolymer thin film.

3. The nanoscale patterning method of claim 1 , wherein the step e) includes:
e1) a step of removing a portion parallel to a first direction from the inorganic spacer layer; and
e2) a step of removing the remaining block copolymer thin film.

4. The nanoscale patterning method of claim 1 , wherein the step d) of forming the inorganic spacer layer is performed by any one or two or more methods selected from the group consisting of resistance heating vapor deposition, electron beam heating vapor deposition, high-frequency heating vapor deposition, laser beam heating vapor deposition, direct current (DC) sputtering, radio frequency (RF) sputtering, bias sputtering, ion plating, epitaxial, atmospheric pressure CVD, low pressure CVD, plasma CVD, photo CVD and atomic layer deposition (ALD).

5. The nanoscale patterning method of claim 1 , wherein the organic photoresist includes any one or two or more polymer resins selected from the group consisting of novolac polymer, polyvinyl phenol, acrylate, norbornene polymer, polytetrafluoroethylene, silsesquioxane polymer, polymethylmethacrylate, terpolymer, poly-1-butene sulfone, novolak-based positive electron resist, poly(methyl-α-chloroacrylate-co-α-methyl styrene), poly(glycidyl methacrylate-co-ethyl acrylate) and polychloromethylstyrene.

6. The nanoscale patterning method of claim 1 , wherein the lithography is any one or two or more selected from the group consisting of photolithography, soft lithography, nanoimprint lithography, and scanning probe lithography.

7. The nanoscale patterning method of claim 1 , wherein the block copolymer is any one or two or more selected from the group consisting of polystyrene-block-polymethylmethacrylate, polybutadiene-block-polybutylmethacrylate, polybutadiene-block-polydimethylsiloxane, polybutadiene-block-polymethylmethacrylate, polybutadiene-block-polyvinylpyridine, polybutylacrylate-block-polymethylmethacrylate, polybutylacrylate-block-polyvinylpyridine, polyisoprene-block-polyvinylpyridine, polyisoprene-block-polymethylmethacrylate, polyhexylacrylate-block-polyvinylpyridine, polyisobutylene-block-polybutylmethacrylate, polyisobutylene-block-polymethylmethacrylate, polyisobutylene-block-polybutylmethacrylate, polyisobutylene-block-polydimethylsiloxane, polybutylmethacrylate-block-polybutylacrylate, polyethylethylene-block-polymethylmethacrylate, polystyrene-block-polybutylmethacrylate, polystyrene-block-polybutadiene, polystyrene-block-polyisoprene, polystyrene-block-polydimethylsiloxane, polystyrene-block-polyvinylpyridine, polyethylethylene-block-polyvinylpyridine, polyethylene-block-polyvinylpyridine, polyvinylpyridine-block-polymethylmethacrylate, polyethyleneoxide-block-polyisoprene, polyethyleneoxide-block-polybutadiene, polyethyleneoxide-block-polystyrene, polyethyleneoxide-block-polymethylmethacrylate, polyethyleneoxide-block-polydimethylsiloxane, polystyrene-block-polyethyleneoxide, polystyrene-block-polymethylmethacrylate-block-polystyrene, polybutadiene-block-polybutylmethacrylate-block-polybutadiene, polybutadiene-block-polydimethylsiloxane-block-polybutadiene, polybutadiene-block-polymethylmethacrylate-block-polybutadiene, polybutadiene-block-polyvinylpyridine-block-polybutadiene, polybutylacrylate-block-polymethylmethacrylate-block-polybutylacrylate, polybutylacrylate-block-polyvinylpyridine-block-polybutylacrylate, polyisoprene-block-polyvinylpyridine-block-polyisoprene, polyisoprene-block-polymethylmethacrylate-block-polyisoprene, polyhexylacrylate-block-polyvinylpyridine-block-polyhexylacrylate, polyisobutylene-block-polybutylmethacrylate-block-polyisobutylene, polyisobutylene-block-polymethylmethacrylate-block-polyisobutylene, polyisobutylene-block-polybutylmethacrylate-block-polyisobutylene, polyisobutylene-block-polydimethylsiloxane-block-polyisobutylene, polybutylmethacrylate-block-polybutylacrylate-block-polybutylmethacrylate, polyethylethylene-block-polymethylmethacrylate-block-polyethylethylene, polystyrene-block-polybutylmethacrylate-block-polystyrene, polystyrene-block-polybutadiene-block-polystyrene, polystyrene-block-polyisoprene-block-polystyrene, polystyrene-block-polydimethylsiloxane-block-polystyrene, polystyrene-block-polyvinylpyridine-block-polystyrene, polyethylethylene-block-polyvinylpyridine-block-polyethylethylene, polyethylene-block-polyvinylpyridine-block-polyethylene, polyvinylpyridine-block-polymethylmethacrylate-block-polyvinylpyridine, polyethyleneoxide-block-polyisoprene-block-polyethyleneoxide, polyethyleneoxide-block-polybutadiene-block-polyethyleneoxide, polyethyleneoxide-block-polystyrene-block-polyethyleneoxide, polyethyleneoxide-block-polymethylmethacrylate-block-polyethyleneoxide, polyethyleneoxide-block-polydimethylsiloxane-block-polyethyleneoxide, and polystyrene-block-polyethyleneoxide-block-polystyrene.

8. The nanoscale patterning method of claim 1 , further comprising:
f) a step of etching a surface of the substrate of the step e), using the inorganic spacer layer as an etching mask.

Assignees

• Korea Advanced Inst Sci & Tech
• Inst Basic Science

Inventors

• Kim Sang Ouk
• Moon Hyoung-Seok

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P76/4088

  Processes for improving the resolution of the masks · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/695 Primary

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title