Varainductor and operation method thereof based on mutual capacitance

Patent metadata

Field	Value
Publication number	US-9812251-B2
Application number	US-201615291520-A
Country	US
Kind code	B2
Filing date	Oct 12, 2016
Priority date	Dec 18, 2013
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

A varainductor includes a spiral inductor, a ground ring, and a floating ring. The floating ring is disposed between the ground ring and the spiral inductor and surrounds a ring portion of the spiral inductor. A switching element, controlled by a switch control signal, selectively electrically connects the ground ring to the floating ring. The switching element includes one or more switches. The one or more switches are controlled by one or more signals of the switch control signal to adjust the inductance level of the varainductor.

First claim

What is claimed is:

1. A varainductor comprising:
a spiral inductor comprising a ring portion;
a ground ring surrounding at least the ring portion of the spiral inductor;
a floating ring disposed between the ground ring and the spiral inductor, wherein an inductance level of the varainductor is based on a mutual capacitance between the spiral inductor and the floating ring and a mutual capacitance between the floating ring and the ground ring; and
an array of switches, the array of switches configured to selectively electrically connect the ground ring to the floating ring.

2. The varainductor of claim 1 , wherein each switch of the array of switches is configured to receive a same switch control signal.

3. The varainductor of claim 1 , wherein at least one switch of the array of switches is configured to receive a first switch control signal and at least another switch of the array of switches is configured to receive a second switch control signal, wherein the second switch control signal is different from the first control signal.

4. The varainductor of claim 1 , wherein the floating ring is located in a first tier of a monolithic three-dimensional integrated circuit (3DIC), the ground ring is located in a second tier of the monolithic 3DIC different from the first tier, and the floating ring is configured to be selectively electrically connected to the ground ring through at least one inter-tier via.

5. The varainductor of claim 1 , wherein the spiral inductor includes a first portion located a first distance from a top surface of a substrate, and a second portion located a second distance from the top surface of the substrate, and the first distance is different from the second distance.

6. The varainductor of claim 1 , wherein at least one portion of the spiral inductor is located in a first tier of a monolithic three-dimensional integrated circuit (3DIC), and at least one of the floating ring or the ground ring is located in a second tier of the monolithic 3DIC different from the first tier.

7. The varainductor of claim 1 , wherein the array of switches includes at least one transistor, the at least one transistor configured to selectively electrically connect the floating ring located in a first tier of a monolithic three-dimensional integrated circuit (3DIC) to the ground ring located in a second tier of the monolithic 3DIC different from the first tier, and the at least one transistor is configured to selectively electrically connect the floating ring to the ground ring through an inter-tier via.

8. The varainductor of claim 1 , wherein the floating ring is spaced from the ground ring by a distance ranging from about 2 μm to about 50 μm.

9. The varainductor of claim 1 , wherein the spiral inductor further comprises at least one input port and at least one output port.

10. The varainductor of claim 9 , wherein the at least one output port extends from the ring portion to a location outside the ground ring.

11. The varainductor of claim 1 , wherein the array of switches comprises:
a first switch disposed on a first side of the spiral inductor; and
a second switch disposed on a second side of the spiral inductor opposite the first side.

12. The varainductor of claim 1 , wherein the floating ring is located in a same tier of a complementary metal oxide semiconductor (CMOS) circuit as the ground ring.

13. A circuit comprising:
a spiral inductor;
a ground ring;
a floating ring disposed between the ground ring and the spiral inductor; and
a switch configured to selectively electrically connect the ground ring to the floating ring, wherein an inductance level of the circuit is based on a mutual capacitance between the spiral inductor and the floating ring and a mutual capacitance between the floating ring and the ground ring.

14. The circuit of claim 13 wherein the spiral inductor comprises a ring portion, wherein the ground ring surrounds at least the ring portion of the spiral inductor.

15. The circuit of claim 13 further comprising an array of switches, wherein the array of switches is configured to selectively electrically connect the ground ring to the floating ring and at least one switch of the array of switches is configured to receive a different control signal from another control signal received at another switch of the array of switches.

16. The circuit of claim 15 wherein the array of switches includes at least one transistor, the at least one transistor configured to selectively electrically connect the floating ring located in a first tier of a monolithic three-dimensional integrated circuit (3DIC) to the ground ring located in a second tier of the monolithic 3DIC different from the first tier.

17. The circuit of claim 15 wherein the array of switches comprises:
a first switch disposed on a first side of the spiral inductor; and
a second switch disposed on a second side of the spiral inductor opposite the first side.

18. A method of operation of a varainductor, the method comprising:
receiving an operating voltage on a spiral inductor;
receiving at least one control signal at an array of switches, wherein the at least one control signal closes a switch electrically coupled to a floating ring and a ground ring surrounding the spiral inductor, wherein
an inductance level of the varainductor is based on a mutual capacitance between the spiral inductor and the floating ring and a mutual capacitance between the floating ring and the ground ring.

19. The method of claim 18 wherein each switch of the array of switches receives a same switch control signal.

20. The method of claim 18 wherein at least one switch of the array of switches receives a different switch control signal from another switch control signal received at another switch of the array of switches.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liu Yi-Hsuan
• Hsieh Hsieh-Hung
• Jou Chewn-Pu
• Hsueh Fu-Lung

Classifications

• H10W42/00

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title

• H01F21/12 Primary

  discontinuously variable, e.g. tapped · CPC title