Method for making high-temperature superconducting film
US-2015380130-A1 · Dec 31, 2015 · US
US9812233B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9812233-B2 |
| Application number | US-201314438572-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 29, 2013 |
| Priority date | Nov 2, 2012 |
| Publication date | Nov 7, 2017 |
| Grant date | Nov 7, 2017 |
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A superconducting oxide thin film includes a superconducting layer formed on a supporting material. The superconducting layer includes an RE-based superconductor as a main component, and the RE-based superconductor includes a CuO chain that has a Cu vacancy portion.
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The invention claimed is: 1. A superconducting oxide thin film, comprising a superconducting layer formed on a supporting material, the superconducting layer including an RE-based superconductor as a main component, and the RE-based superconductor including a CuO chain having a Cu vacancy portion. 2. The superconducting oxide thin film of claim 1 , wherein the RE-based superconductor includes a CuO single chain as the CuO chain, and the Cu vacancy portion is a linear defect formed by consecutive vacancies of Cu atoms in the CuO single chain. 3. The superconducting oxide thin film of claim 2 , wherein the Cu vacancy portion is a linear defect formed by consecutive vacancies of Cu atoms along a chain direction in the CuO single chain. 4. The superconducting oxide thin film of claim 1 , wherein the RE-based superconductor includes a CuO single chain as the CuO chain, the Cu vacancy portion is formed by consecutive vacancies of Cu atoms in the CuO single chain along a b-axis direction of a crystal structure of the RE-based superconductor, and the RE-based superconductor includes a plurality of Cu vacancy portions along an a-axis direction of the crystal structure, and includes Cu atoms at positions between the plurality of Cu vacancy portions arranged in the a-axis direction. 5. The superconducting oxide thin film of claim 1 , wherein the RE-based superconductor includes a CuO double chain as the CuO chain, and the Cu vacancy portion is formed by consecutive vacancies of Cu atoms in a chain direction in at least one CuO chain of two CuO chains in the CuO double chain. 6. The superconducting oxide thin film of claim 1 , wherein the RE-based superconductor includes a CuO single chain and a CuO double chain as the CuO chain, and the Cu vacancy portion is formed by consecutive vacancies of Cu atoms in a chain direction in at least one CuO chain among a plurality of CuO chains configuring the CuO single chain and the CuO double chain. 7. The superconducting oxide thin film of claim 1 , wherein the RE-based superconductor includes a CuO double chain as the CuO chain, and an oxygen atom vacancy is included in one CuO chain among CuO chains configuring the CuO double chain.
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