Plasmonic filter

Patent metadata

Field	Value
Publication number	US-9810823-B2
Application number	US-201615357871-A
Country	US
Kind code	B2
Filing date	Nov 21, 2016
Priority date	Nov 27, 2015
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

An infrared high-pass plasmonic filter includes a copper layer interposed between two layers of a dielectric material. An array of patterned openings extend through the copper layer and are filled with the dielectric material. Each patterned opening is in the shape of a greek cross, with the arms of adjacent patterns being collinear. A ratio of the width to the length of each arm is in the range from 0.3 to 0.6, and the distance separating the opposite ends of arms of adjacent patterns is shorter than 10 nm.

First claim

The invention claimed is:

1. An infrared high-pass plasmonic filter, comprising:
a copper layer interposed between two layers of a dielectric material;
an array of patterns made of the dielectric material, each pattern being in the shape of a greek cross, with arms of adjacent patterns being collinear;
wherein a ratio (B/A) of a width (B) to a length (A) of each arm is in a range from 0.3 to 0.6, and wherein a distance (D) separating opposite ends of arms of adjacent patterns being shorter than 10 nm.

2. The plasmonic filter of claim 1 , wherein a thickness of the copper layer is in a range from 50 to 500 nm.

3. The plasmonic filter of claim 1 , wherein an optical index of said dielectric material is in a range from 1.3 to 2.3.

4. The plasmonic filter of claim 1 , wherein the dielectric material is silicon nitride.

5. The plasmonic filter of claim 1 , wherein the length (A) of the arms is in a range from 70 to 195 nm.

6. The plasmonic filter of claim 1 , wherein said distance (D) is in a range from 3 to 7 nm.

7. The plasmonic filter of claim 1 , wherein said ratio (B/A) is in a range from 0.35 to 0.55.

8. An image sensor, comprising:
a semiconductor layer portion including, inside and on top of said semiconductor layer portion, at least one first pixel configured to receive visible light and at least one second pixel configured to receive infrared light;
wherein each first pixel includes a visible light bandpass plasmonic filter; and
wherein each second pixel includes an infrared high-pass filter, said infrared high-pass filter comprising:
a copper layer interposed between two layers of a dielectric material;
an array of patterns made of the dielectric material, each pattern being in the shape of a greek cross, with arms of adjacent patterns being collinear;
wherein a ratio (B/A) of a width (B) to a length (A) of each arm is in a range from 0.3 to 0.6, and wherein a distance (D) separating opposite ends of arms of adjacent patterns being shorter than 10 nm.

9. The image sensor of claim 8 , wherein a thickness of the copper layer is in a range from 50 to 500 nm.

10. The image sensor of claim 8 , wherein an optical index of said dielectric material is in a range from 1.3 to 2.3.

11. The image sensor of claim 8 , wherein the dielectric material is silicon nitride.

12. The image sensor of claim 8 , wherein the length (A) of the arms is in a range from 70 to 195 nm.

13. The image sensor of claim 8 , wherein said distance (D) is in a range from 3 to 7 nm.

14. The image sensor of claim 8 , wherein said ratio (B/A) is in a range from 0.35 to 0.55.

15. An infrared high-pass plasmonic filter, comprising:
a copper layer interposed between two layers of a dielectric material, said copper layer including an array of openings extending through the copper layer and filled with said dielectric material;
wherein said openings are in a cross shape formed by two arms having a same length (A) and a same width (B);
wherein the two arms perpendicularly intersect each other;
wherein the arms of adjacent openings in the array are collinear but separated by a distance (D) less than 10 nm; and
wherein a ratio (B/A) of the width (B) to the length (A) of each arm is in a range from 0.3 to 0.6.

16. The plasmonic filter of claim 15 , wherein a thickness of the copper layer is in a range from 50 to 500 nm.

17. The plasmonic filter of claim 15 , wherein an optical index of said dielectric material is in a range from 1.3 to 2.3.

18. The plasmonic filter of claim 15 , wherein the length (A) of the arms is in a range from 70 to 195 nm.

19. The plasmonic filter of claim 15 , wherein said distance (D) is in a range from 3 to 7 nm.

20. The plasmonic filter of claim 15 , wherein said ratio (B/A) is in a range from 0.35 to 0.55.

Assignees

• St Microelectronics Sa
• St Microelectronics Crolles 2 Sas
• Commissariat Energie Atomique

Inventors

• Girard Desprolet Romain
• Lhostis Sandrine
• Boutami Salim

Classifications

• H01L27/1462

  Electricity · mapped topic

• H01L27/14645

  Electricity · mapped topic

• H01L27/14649

  Electricity · mapped topic

• G02B5/204

  in which spectral selection is performed by means of a conductive grid or array, e.g. frequency selective surfaces (for use with wavelengths longer than the infrared light H01Q15/0006) · CPC title

• H01L27/14621

  Electricity · mapped topic