Integrated dual axis fluxgate sensor using double deposition of magnetic material

Patent metadata

Field	Value
Publication number	US-9810745-B2
Application number	US-201715429388-A
Country	US
Kind code	B2
Filing date	Feb 10, 2017
Priority date	May 23, 2014
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.

First claim

What is claimed is:

1. A method of forming an Integrated Dual Axis Fluxgate Sensor, comprising:
forming a first SiN layer on a surface of a processed semiconductor substrate;
forming a first TetraEthyl OrthoSilicate (TEOS) layer to define a form for a bottom layer of a coil;
forming a first copper conductor layer in the first TEOS form to form the bottom layer of the coil;
forming a second SiN layer overlaying the first TEOS layer and the first copper conductor layer;
forming a second TEOS layer overlaying and touching the second SiN layer and forming a third SiN layer overlaying the second TEOS layer;
forming a titanium layer overlaying and touching the third SiN layer;
forming a laminated magnetic core structure over the titanium layer;
forming a third TEOS layer overlying the third SiN layer, the bottom layer of the coil and the laminated magnetic core structure, wherein the third TEOS layer defines a form for a plurality of openings to the bottom layer of the coil;
forming a second copper conductor layer in the plurality of openings to form vias touching and coupling to the bottom layer of the coil;
forming a third copper layer to form the top layer of the coil wherein the third copper layer connects to the vias thereby coupling the top layer of the coil to the bottom layer of the coil; and
forming a passivation layer touching the third TEOS layer and the top surface of the top layer of coil, wherein the passivation layer includes openings to the top layer of the coil.

2. The method of claim 1 , wherein the laminated magnetic core structure is a first stack of alternating layers of NiFe and AlN dielectric layers formed on the top surface of the titanium wherein, the first stack of NiFe layers are aligned in a North-South direction, a layer of AlN formed the top surface of the first stack of alternating layers of NiFe and AlN dielectric, a second stack of alternating layers of NiFe and AlN dielectric layers formed on the top surface of the titanium wherein, the second stack of NiFe layers are aligned in an East-West direction, wherein a the alternating layers of NiFe and AlN dielectric layers are configured to form a magnetic core.

3. The method of claim 1 , wherein the laminated magnetic core structure is stack of alternating 300 nm layers of NiFe and AlN dielectric layers formed on the top surface of the titanium layer, wherein the odd numbered NiFe layers are aligned in a North-South direction and the even numbered NiFe layers are aligned in an East-West direction.

4. The method of claim 1 , wherein the first copper conductor layer has a thickness of 4-7 μm.

5. The method of claim 1 , wherein the NiFe layer has a thickness of 300 nm.

6. The method of claim 1 , wherein the magnetic core is implemented in a race track configuration.

7. The method of claim 1 , wherein the magnetic core is implemented in a standard open core configuration.

8. A method of forming a fluxgate magnetic sensor, comprising:
forming a first SiN layer on the top surface portion of a semiconductor substrate;
forming a first oxide layer patterned to define a form for a bottom layer of a coil;
forming a first copper layer of the coil in the form;
forming a second SiN layer overlaying the first oxide layer and the first copper layer;
forming a second oxide layer on the second SiN layer and a third SiN layer on the second oxide layer;
forming a titanium layer on the third SiN layer;
forming a laminated magnetic core structure over the titanium layer;
forming a third oxide layer overlying the third SiN layer, the first copper layer of the coil and the laminated magnetic core structure, wherein the third oxide layer defines a plurality of openings for via portions of the coil;
forming a second copper layer deposited in the plurality of openings forming the via portions, wherein the via portions touch and are coupled to the first copper layer of the coil;
forming a third copper layer of the coil wherein the third copper layer connects to the via portions thereby coupling the third copper layer of the coil to the first copper layer of the coil; and
forming a passivation layer touching the third oxide layer and the third copper layer of coil, wherein the passivation layer includes openings in the passivation layer to contact the third copper layer of the coil.

9. The method of claim 8 , wherein forming the laminated magnetic core structure comprises:
forming a first stack of alternating layers of NiFe and AlN located on the titanium wherein, the NiFe layers in the first stack are aligned in a North-South direction;
forming a layer of AlN formed on the first stack of alternating layers of NiFe and AlN; and
forming a second stack of alternating layers of NiFe and AlN located on the titanium wherein, the NiFe layers in the second stack are aligned in an East-West direction.

10. The method of claim 8 , wherein forming the laminated magnetic core structure comprises:
forming a stack of alternating 300 nm layers of NiFe and AlN located on the titanium layer, wherein the odd numbered NiFe layers of the stack are aligned in a North-South direction and the even numbered NiFe layers of the stack are aligned in an East-West direction.

11. The method of claim 8 , wherein the first copper layer has a thickness of 4-7 μm.

12. The method of claim 8 , wherein the NiFe layer has a thickness of 300 nm.

13. The method of claim 8 , wherein the laminated magnetic core structure is implemented in a race track configuration.

14. The method of claim 8 , wherein the laminated magnetic core structure is implemented in a standard open core configuration.

15. A method of forming a fluxgate magnetic sensor, comprising:
forming a first copper layer of a coil over a semiconductor substrate;
forming a titanium layer over the first copper layer;
forming a laminated magnetic core structure over the titanium layer, the laminated magnetic core structure comprising alternating layers of NiFe and AlN, wherein a first subset of the NiFe layers are aligned in a North-South direction and a second subset of the NiFe layers are aligned in an East-West direction;
forming an oxide layer overlying the first copper layer of the coil and the laminated magnetic core structure, wherein the second oxide layer defines a plurality of openings for vias of the coil;
forming a second copper layer in the plurality of openings forming the vias, wherein the vias touch and are coupled to the first copper layer of the coil;
forming a third copper layer of the coil wherein the third copper layer connects to the vias thereby coupling the third copper layer of the coil to the first copper layer of the coil; and
forming a passivation layer touching the third copper layer, wherein the passivation layer includes openings in the passivation layer to contact the third copper layer of the coil.

16. The method of claim 15 , wherein forming the laminated magnetic core structure comprises:
forming a first stack of alternating layers of NiFe and AlN located on the titanium wherein, the NiFe layers in the first stack are the first subset of NiFe layers aligned in a North-South direction;
forming a layer of AlN formed on the first stack of alternating layers of NiFe and AlN; and
forming a second stack of alternating layers of NiFe and AlN located on the titanium wherein, the NiFe layers in the second stack are the second subset of NiFe layers aligned in an East-West direction.

17. The method of claim 15 , wherein forming the laminated magnetic core structure comprises:
forming a stack of alternating 300 nm layers of NiFe and AlN located

Assignees

• Texas Instruments Inc

Inventors

• Mohan Anuraag
• Lee Dok Won
• French William
• Mazotti Erika L

Classifications

• G01R33/0052

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title

• G01R33/04 Primary

  using the flux-gate principle · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H10N50/20

  Spin-polarised current-controlled devices (magnetoresistive devices H10N50/10) · CPC title