Electrically conductive thin films containing Re2C

Patent metadata

Field	Value
Publication number	US-9809460-B2
Application number	US-201514750058-A
Country	US
Kind code	B2
Filing date	Jun 25, 2015
Priority date	Jul 4, 2014
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure

Re 2 C  Chemical Formula 1

wherein Re is a lanthanide. Also an electronic device including the electrically conductive thin film.

First claim

What is claimed is:

1. An electrically conductive thin film, comprising:
a compound represented by Chemical Formula 1 and having a layered crystal structure:
Re 2 C  Chemical Formula 1

wherein Re is a lanthanide, and
wherein the electrically thin film comprises a plurality of nanosheets including the compound represented by Chemical Formula 1, wherein adjacent nanosheets of the plurality of nanosheets contact one another to provide an electrical connection.

2. The electrically conductive thin film of claim 1 , wherein the electrically conductive thin film has transmittance of greater than or equal to about 80% for light at a wavelength range of 550 nanometers at a thickness of 10 nanometers.

3. The electrically conductive thin film of claim 1 , wherein Re comprises La, Ce, Nd, Tb, Dy, or Ho.

4. The electrically conductive thin film of claim 1 , wherein the compound represented by Chemical Formula 1 has a product of an absorption coefficient for light having a wavelength of about 550 nm at 25° C. and a resistivity value thereof of less than or equal to about 30 ohms per square.

5. The electrically conductive thin film of claim 1 , wherein the layered crystal structure belongs to a rhombohedral system with an R 3 m space group.

6. An electrically conductive thin film, comprising:
a compound represented by Chemical Formula 1 and having a layered crystal structure:
Re 2 C  Chemical Formula 1

wherein Re is a lanthanide and electrically conductive thin film comprises a continuous deposition film including the compound represented by Chemical Formula 1.

7. The electrically conductive thin film of claim 6 , wherein the compound represented by Chemical Formula 1 has a product of an absorption coefficient for light having a wavelength of about 550 nm at 25° C. and a resistivity value thereof of less than or equal to about 30 ohms per square.

8. An electronic device comprising an electrically conductive thin film comprising a compound represented by Chemical Formula 1 and having a layered crystal structure:
Re 2 C  Chemical Formula 1

wherein Re is a lanthanide, and
wherein the electrically thin film comprises a plurality of nanosheets including the compound represented by Chemical Formula 1, wherein adjacent nanosheets of the plurality of nanosheets contact one another to provide an electrical connection.

9. The electronic device of claim 8 , wherein the electrically conductive thin film has transmittance of greater than or equal to about 80% for light at a wavelength range of 550 nanometers at a thickness of 10 nanometers.

10. The electronic device of claim 8 , wherein the Re comprises La, Ce, Nd, Tb, Dy, or Ho.

11. The electronic device of claim 8 , wherein the compound represented by Chemical Formula 1 has a product of an absorption coefficient for light having a wavelength of about 550 nanometers at 25° C. and a resistivity value thereof of less than or equal to about 30 ohms per square.

12. The electronic device of claim 8 , wherein the layered crystal structure belongs to a rhombohedral system with an R 3 m space group.

13. The electronic device of claim 8 , wherein the electrically conductive thin film comprises a continuous deposition film including the sub-carbide compound.

14. The electronic device of claim 8 , wherein the electrically conductive thin film comprises a plurality of nanosheets including the compound represented by Chemical Formula 1, wherein adjacent nanosheets of the plurality of nanosheets contact one another to provide an electrical connection.

15. The electronic device of claim 8 , wherein the electronic device is a flat panel display, a touch screen panel, a solar cell, an e-window, an electrochromic mirror, a heat mirror, a transparent transistor, or a flexible display.

16. An electrically conductive thin film, comprising:
a compound represented by Chemical Formula 1 and having a layered crystal structure:
Re 2 C  Chemical Formula 1

wherein Re is a lanthanide, and
wherein the electrically conductive thin film has transmittance of greater than or equal to about 80% for light at a wavelength range of 550 nanometers at a thickness of 10 nanometers.

17. The electrically conductive thin film of claim 16 , wherein Re comprises La, Ce, Nd, Tb, Dy, or Ho.

18. The electrically conductive thin film of claim 16 , wherein the compound represented by Chemical Formula 1 has a product of an absorption coefficient for light having a wavelength of about 550 nm at 25° C. and a resistivity value thereof of less than or equal to about 30 ohms per square.

19. The electrically conductive thin film of claim 16 , wherein the layered crystal structure belongs to a rhombohedral system with an R 3 m space group.

20. The electrically conductive thin film of claim 16 , which comprises a continuous deposition film including the compound represented by Chemical Formula 1.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Hee Jung
• Son Yoon Chul
• Jung Doh Won
• Lee Woojin
• Choi Jae-Young

Classifications

• C01B31/303 Primary

  Chemistry & Metallurgy · mapped topic

• C01B31/10

  Chemistry & Metallurgy · mapped topic

• Y10T428/256

  Heavy metal or aluminum or compound thereof · CPC title

• Y10T428/25

  Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles · CPC title

• H01B1/02

  mainly consisting of metals or alloys · CPC title