Methods of manufacturing silicon blades for shaving razors

Patent metadata

Field	Value
Publication number	US-9808944-B2
Application number	US-201414306702-A
Country	US
Kind code	B2
Filing date	Jun 17, 2014
Priority date	Jun 17, 2014
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

Methods are provided for the manufacture of razor blades from silicon material. In some implementations, the method includes aligning a mono-crystalline silicon wafer comprising a {100} surface at an angle where {111} planes intersect the {100} surface parallel and perpendicular to the wafer; etching the mono-crystalline silicon wafer to expose an {111} plane and a second plane to provide a blade edge having between about a 20 degree included blade angle and about a 35 degree included blade angle; applying a hard coating on the blade edge; providing a radius of curvature of the blade edge between about 20 nanometers and about 100 nanometers after deposition of the hard coating; applying a soft coating on the blade edge; and removing the razor blade from the mono-crystalline silicon wafer.

First claim

What is claimed is:

1. A method for manufacturing at least one razor blade comprising:
providing a mono-crystalline silicon wafer comprising a {100} surface;
etching the mono-crystalline silicon wafer at an angle relative to the surface {100} to expose an {111} plane where the {111} plane intersects the {100} surface at an angle and a second plane to provide at least one blade edge having between about a 19.5 degree included blade angle and about a 35.3 degree included blade angle;
applying at least one inner layer on the at least one blade edge;
providing a radius of curvature of the at least one blade edge between about 20 nanometers and about 100 nanometers after deposition of the at least one inner layer;
applying at least one outer layer on the at least one blade edge; and
removing the at least one razor blade from the mono-crystalline silicon wafer.

2. The method of claim 1 , wherein the second plane is a {110} plane.

3. The method of claim 1 , wherein the second plane is a {552} plane.

4. The method of claim 1 , further comprising applying a masking layer to the mono-crystalline silicon wafer prior to the aligning step.

5. The method of claim 4 , further comprising patterning the masking layer to define a profile of the at least one razor blade.

6. The method of claim 1 , wherein the at least one inner layer comprises a hard coating.

7. The method of claim 6 , wherein the hard coating comprises diamond, diamond-like carbon, amorphous diamond, boron nitride, niobium nitride, silicon nitride, chromium nitride, zirconium nitride, titanium nitride, silicon carbide, alumina, zirconia, or any combination thereof.

8. The method of claim 4 , further comprising removing the masking layer before applying the at least one inner layer.

9. The method of claim 7 , further comprising applying a second masking layer before applying the at least one outer layer.

10. The method of claim 1 , wherein the at least one outer layer comprises a soft coating.

11. The method of claim 9 , wherein the soft coating comprises polytetrafluoroethylene.

12. The method of claim 1 , wherein the at least one inner layer is applied after removing the at least one razor blade from the silicon wafer.

13. The method of claim 1 , wherein the at least one inner layer is applied before removing the at least one razor blade from the silicon wafer, wherein the at least one inner layer is first applied to a first side of the at least one razor blade and then applied to a second side of the at least one razor blade opposite the first side.

14. The method of claim 1 , further comprising forming at least one blade box on the silicon wafer, each comprising a plurality of razor blades.

15. The method of claim 14 , wherein the at least one blade box has a perimeter encasing the plurality of razor blades.

16. The method of claim 1 , further comprising disposing the razor blade in a razor cartridge housing.

17. The method of claim 16 , further comprising disposing the at least one blade box in a razor cartridge.

18. A razor cartridge formed using the method of claim 1 .

19. The method of claim 1 , wherein a variation in a surface roughness of the at least one razor blade is between about 100 nanometer to 200 nanometers.

Assignees

• Gillette Co
• Gillette Co Llc

Inventors

• Simms Graham John
• Leussink Peter Johannus
• Sonnenberg Neville

Classifications

• C30B33/08

  Etching · CPC title

• B26B21/60

  by the coating material · CPC title

• B26B21/4068 Primary

  Mounting devices; Manufacture of razors or cartridges (B26B21/528 takes precedence) · CPC title

• C30B29/06

  Silicon · CPC title

• B26B21/58

  characterised by the material · CPC title