Polycrystalline diamond compacts

Patent metadata

Field	Value
Publication number	US-9808910-B2
Application number	US-201514661993-A
Country	US
Kind code	B2
Filing date	Mar 18, 2015
Priority date	Nov 20, 2006
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) and methods of fabricating such PDCs. In an embodiment, a PDC includes a substrate and a preformed polycrystalline diamond table including an interfacial surface bonded to the substrate and an opposing working surface. The preformed polycrystalline diamond table includes a proximal region extending from the interfacial surface to an intermediate location within the preformed polycrystalline diamond table that includes a metallic infiltrant infiltrated from the substrate, and a distal region extending from the working surface to the intermediate location that is substantially free of the metallic infiltrant. A boundary exists between the proximal and distal regions that has a nonplanar irregular profile characteristic of the metallic infiltrant having been infiltrated into the preformed polycrystalline diamond table.

First claim

The invention claimed is:

1. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including a plurality of bonded diamond grains, an interfacial surface bonded to the substrate, and a working surface generally opposing the interfacial surface, the polycrystalline diamond table further including:
a proximal region bonded to the substrate, the proximal region extending from the interfacial surface to an intermediate location within the polycrystalline diamond table, the proximal region including a metallic infiltrant infiltrated into at least some interstitial regions between the bonded diamond grains of the proximal region, the metallic infiltrant exhibiting a surface characteristic of not being chemically etched; and
a distal region extending from the working surface to the intermediate location and being substantially free of the metallic infiltrant, the distal region including at least partially empty interstitial regions between the bonded diamond grains thereof though which at least a portion of the surface of the metallic infiltrant is exposed.

2. The polycrystalline diamond compact of claim 1 wherein the metallic infiltrant includes iron, nickel, cobalt, or alloys thereof.

3. The polycrystalline diamond compact of claim 1 wherein the metallic infiltrant includes tungsten, tungsten carbide, or combinations thereof.

4. The polycrystalline diamond compact of claim 1 wherein the intermediate location is at a depth, from the working surface of the polycrystalline diamond table, of at least about 50 μm.

5. The polycrystalline diamond compact of claim 1 wherein the intermediate location is at a depth, from the working surface of the polycrystalline diamond table, of about 50 μm to about 2000 μm.

6. The polycrystalline diamond compact of claim 1 wherein the substrate includes a cemented carbide substrate including the metallic infiltrant therein.

7. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes a boundary between the proximal region and the distal region exhibiting a boundary surface characteristic of the metallic infiltrant having been partially infiltrated into the polycrystalline diamond table.

8. The polycrystalline diamond compact of claim 1 wherein the distal region includes a residual amount of metal-solvent catalyst therein.

9. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including a plurality of bonded diamond grains, an interfacial surface bonded to the substrate, and a working surface generally opposing the interfacial surface, the polycrystalline diamond table further including:
a proximal region bonded to the substrate, the proximal region extending from the interfacial surface to an intermediate location within the polycrystalline diamond table, the proximal region including a metallic infiltrant infiltrated into at least some interstitial regions between the bonded diamond grains of the proximal region; and
a distal region extending from the working surface to the intermediate location and being substantially free of the metallic infiltrant, the distal region includes at least partially empty interstitial regions through which portions of the metallic infiltrant in the proximal region are exposed, the portions of the metallic infiltrant having a surface characteristic of not being chemically etched; and
a boundary between the proximal region and the distal region, the boundary exhibiting a boundary surface characteristic of the metallic infiltrant having been partially infiltrated into the diamond table.

10. The polycrystalline diamond compact of claim 9 wherein the distal region includes a residual amount of metal-solvent catalyst therein.

11. The polycrystalline diamond compact of claim 9 wherein the metallic infiltrant includes iron, nickel, cobalt, or alloys thereof.

12. The polycrystalline diamond compact of claim 9 wherein the metallic infiltrant includes tungsten, tungsten carbide, or combinations thereof.

13. The polycrystalline diamond compact of claim 9 wherein the intermediate location is at a depth, from the working surface of the polycrystalline diamond table of at least about 50 μm.

14. The polycrystalline diamond compact of claim 9 wherein the intermediate location is at a depth, from the working surface of the polycrystalline diamond table, of about 50 μm to about 2000 μm.

15. The polycrystalline diamond compact of claim 9 wherein the substrate includes a cemented carbide substrate including the metallic infiltrant therein.

16. A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table including a plurality of bonded diamond grains, an interfacial surface bonded to the substrate, and a working surface generally opposing the interfacial surface, the polycrystalline diamond table further including:
a proximal region bonded to the substrate, the proximal region extending from the interfacial surface to an intermediate location within the polycrystalline diamond table, the proximal region including a metallic infiltrant in at least some interstitial regions between the bonded diamond grains of the proximal region, the metallic infiltrant exhibiting a surface characteristic of not being chemically etched; and
a distal region extending from the working surface to the intermediate location and being substantially free of the metallic infiltrant, the distal region including at least partially empty interstitial regions between the bonded diamond grains thereof though which at least a portion of the surface of the metallic infiltrant is exposed; and
a boundary between the proximal region and the distal region, the boundary exhibiting a boundary surface characteristic of the metallic infiltrant having been infiltrated into the polycrystalline diamond table.

17. The polycrystalline diamond compact of claim 16 wherein the metallic infiltrant includes iron, nickel, cobalt, or alloys thereof.

18. The polycrystalline diamond compact of claim 16 wherein the metallic infiltrant includes tungsten, tungsten carbide, or combinations thereof.

19. The polycrystalline diamond compact of claim 16 wherein the intermediate location is at a depth, from the working surface of the polycrystalline diamond table, of at least about 50 μm.

20. The polycrystalline diamond compact of claim 16 wherein the intermediate location is at a depth, from the working surface of the polycrystalline diamond table, of about 50 μm to about 2000 μm.

21. The polycrystalline diamond compact of claim 16 wherein the substrate includes a cemented carbide substrate including the metallic infiltrant therein.

Assignees

• Us Synthetic Corp

Inventors

• Sani Mohammad N

Classifications

• E21B10/567

  with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts · CPC title

• C04B35/65

  Reaction sintering of free metal- or free silicon-containing compositions {(C04B35/573, C04B35/591 take precedence)} · CPC title

• B22F3/15

  Hot isostatic pressing · CPC title

• C04B2235/3817

  Carbides · CPC title

• C04B2237/363

  Carbon · CPC title