Substrate for power modules, substrate with heat sink for power modules, and power module

Patent metadata

Field	Value
Publication number	US-9807865-B2
Application number	US-201414772155-A
Country	US
Kind code	B2
Filing date	Mar 24, 2014
Priority date	Mar 29, 2013
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t 1 of the circuit layer and a thickness t 2 of the second aluminum layer of the metal layer satisfy t 1 <t 2 .

First claim

The invention claimed is:

1. A power module substrate comprising:
an insulating substrate;
a circuit layer which is formed on one surface of the insulating substrate; and
a metal layer which is formed on the other surface of the insulating substrate,
wherein the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded on one surface of the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded on a surface of the first aluminum layer located on the side opposite to the insulating substrate by solid-phase diffusion,
the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and
a relationship between a thickness t 1 of the circuit layer and a thickness t 2 of the second aluminum layer of the metal layer satisfy t 1 <t 2 .

2. A power module substrate with a heat sink comprising:
the power module substrate according to claim 1 ; and
a heat sink which is bonded to the metal layer side.

3. A power module comprising:
the power module substrate according to claim 1 ; and
an electrical component which is mounted on the circuit layer.

4. The power module substrate according to claim 1 ,
wherein the relationship between thickness t 1 of the circuit layer and the thickness t 2 of the second aluminum layer of the metal layer satisfy t 2 /t 1 ≧1.5.

5. A power module substrate with a heat sink comprising:
the power module substrate according to claim 4 ; and
a heat sink which is bonded to the metal layer side.

6. A power module comprising:
the power module substrate according to claim 4 ; and
an electrical component which is mounted on the circuit layer.

7. The power module substrate according to claim 1 ,
wherein the metal layer has the second aluminum layer which is bonded on the other surface of the insulating substrate and a second copper layer made of copper or a copper alloy which is bonded on a surface of the second aluminum layer located on the side opposite to the insulating substrate by solid-phase diffusion.

8. A power module substrate with a heat sink comprising:
the power module substrate according to claim 7 ; and
a heat sink which is bonded to the metal layer side.

9. A power module comprising:
the power module substrate according to claim 7 ; and
an electrical component which is mounted on the circuit layer.

10. The power module substrate according to claim 7 ,
wherein the relationship between thickness t 1 of the circuit layer and the thickness t 2 of the second aluminum layer of the metal layer satisfy t 2 /t 1 ≧1.5.

11. A power module substrate with a heat sink comprising:
the power module substrate according to claim 10 ; and
a heat sink which is bonded to the metal layer side.

12. A power module comprising:
the power module substrate according to claim 10 ; and
an electrical component which is mounted on the circuit layer.

Assignees

• Mitsubishi Materials Corp

Inventors

• Nagatomo Yoshiyuki
• Terasaki Nobuyuki
• Kuromitsu Yoshirou

Classifications

• H10W40/255 Primary

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W40/47

  by flowing liquids, e.g. forced water cooling · CPC title

• H10W40/611

  Bolts or screws · CPC title

• H10W40/10

  Arrangements for heating · CPC title