Vertical-cavity surface-emitting laser diode and optical transmission apparatus

Patent metadata

Field	Value
Publication number	US-9806498-B2
Application number	US-201615143653-A
Country	US
Kind code	B2
Filing date	May 2, 2016
Priority date	Aug 7, 2013
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

First claim

What is claimed is:

1. A vertical-cavity surface-emitting laser diode comprising:
a first resonator that includes a first current narrowing structure having a first conductive region;
a second resonator that includes a second current narrowing structure having a second conductive region;
a coupling portion that couples the first resonator with the second resonator, the coupling portion having a third conductive region, the third conductive region connecting the first conductive region and the second conductive region; and
a non-conductive region continuously surrounding the first conductive region, the second conductive region and the third conductive region, wherein:
the first, second, and third conductive regions are formed in a common current narrowing layer,
a width of the third conductive region is narrower than each of widths of the first and second conductive region, and
an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

2. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the first, second, and third conductive regions are surrounded by a non-conductive region formed in the common current narrowing layer.

3. The vertical-cavity surface-emitting laser diode according to claim 2 , wherein the non-conductive region is an oxidized region.

4. The vertical-cavity surface-emitting laser diode according to claim 2 , wherein the first resonator has a first electrode that supplies electric power to the first resonator, and the conductive region of the second resonator is covered with a light-shielding member.

5. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein a distance between the first resonator and the second resonator and a width of the coupling portion are set at values with which high frequency characteristics is improved more greatly than the first resonator with which the second resonator is not coupled.

6. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the first resonator has a first electrode that supplies electric power to the first resonator, and the second resonator has a second electrode that controls modulation frequency of the first resonator.

7. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the first resonator is driven by a first drive signal, and the second resonator is driven by a second drive signal different from the first drive signal during the first resonator being driven by the first drive signal.

8. An optical transmission apparatus comprising:
an electronic component including a vertical-cavity surface-emitting laser diode; and
a housing that covers the electronic component and to which an optical fiber is fixed,
wherein the vertical-cavity surface-emitting laser diode includes:
a first resonator that includes a first current narrowing structure having a first conductive region,
a second resonator that includes a second current narrowing structure having a second conductive region,
a coupling portion that couples the first resonator with the second resonator, the coupling portion having a third conductive region, the third conductive region connecting the first conductive region and the second conductive region; and

a non-conductive region continuously surrounding the first conductive region, the second conductive region and the third conductive region, wherein:
the first, second, and third conductive regions are formed in a common current narrowing layer,
a width of the third conductive region is narrower than each of widths of the first and second conductive region, and
an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

9. The optical transmission apparatus according to claim 8 , wherein the first resonator has a first electrode that supplies electric power to the first resonator, and a non-conductive region of the second resonator is covered with a light-shielding member.

10. The vertical-cavity surface-emitting laser diode according to claim 1 , wherein the first conductive region, the second conductive region and the third conductive region are non-oxidized regions surrounded by an oxidized region comprising the non-conductive region in the common current narrowing layer.

Assignees

• Tokyo Inst Tech
• Fuji Xerox Co Ltd

Inventors

• Koyama Fumio
• Dalir Hamed
• Kondo Takashi
• Jogan Naoki
• Takeda Kazutaka
• Nakayama Hideo

Classifications

• H01S5/18394

  Apertures, e.g. defined by the shape of the upper electrode · CPC title

• H01S5/18302

  comprising an integrated optical modulator · CPC title

• H01S5/1032

  Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region · CPC title

• H01S5/3432

  the whole junction comprising only (AI)GaAs · CPC title

• H01S5/1835 Primary

  Non-circular mesa · CPC title