Photonic devices and methods of using and making photonic devices

US9806485B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9806485-B2
Application numberUS-201615052809-A
CountryUS
Kind codeB2
Filing dateFeb 24, 2016
Priority dateMar 14, 2013
Publication dateOct 31, 2017
Grant dateOct 31, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of guiding an optical signal beam in a photonic device, the photonic device comprising a substrate, a dielectric layer disposed on the substrate and having a first refractive index, at least one dielectric strip disposed within the dielectric layer and having a second refractive index greater than the first refractive index, and a gain layer disposed in contact with the dielectric layer and having a third refractive index greater than the first refractive index, the method comprising: coupling the optical signal beam into a waveguide region of the gain layer disposed over the at least one dielectric strip so as to guide the optical signal beam in a propagation direction parallel to a longitudinal axis of the at least one dielectric strip; and coupling an optical pump beam into the waveguide region of the gain layer so as to amplify the optical signal beam, wherein a majority of the optical pump beam is confined within the gain layer. 2. The method of claim 1 , further comprising: coupling the optical pump beam into the waveguide region of the gain layer from a curved waveguide region of the gain layer disposed over a curved dielectric strip region embedded within the dielectric layer. 3. The method of claim 1 , further comprising: coupling the optical pump beam into the waveguide region of the gain layer from a tapered waveguide region of the gain layer disposed over a tapered dielectric strip region embedded within the dielectric layer. 4. The method of claim 1 , further comprising: reflecting at least a portion of the optical signal beam within the a portion of waveguide guide region disposed over a grating formed in the at least one dielectric strip. 5. A method of guiding an optical signal beam in a photonic device, the photonic device comprising a substrate, a dielectric layer disposed on the substrate and having a first refractive index, at least one dielectric strip disposed within the dielectric layer and having a second refractive index greater than the first refractive index, and a gain layer disposed in contact with the dielectric layer and having a third refractive index greater than the first refractive index, the method comprising: coupling the optical signal beam into a waveguide region of the gain layer disposed over the at least one dielectric strip so as to guide the optical signal beam in a propagation direction parallel to a longitudinal axis of the at least one dielectric strip; and coupling an optical pump beam into the waveguide region of the gain layer so as to amplify the optical signal beam, wherein the optical pump beam has a wavelength of λ p and the at least one dielectric strip is disposed a distance of at least λ p /4 from a boundary between the dielectric layer and the gain layer. 6. The method of claim 5 , further comprising: coupling the optical pump beam into the waveguide region of the gain layer from a curved waveguide region of the gain layer disposed over a curved dielectric strip region embedded within the dielectric layer. 7. The method of claim 5 , further comprising: coupling the optical pump beam into the waveguide region of the gain layer from a tapered waveguide region of the gain layer disposed over a tapered dielectric strip region embedded within the dielectric layer. 8. The method of claim 5 , further comprising: reflecting at least a portion of the optical signal beam within the a portion of waveguide guide region disposed over a grating formed in the at least one dielectric strip. 9. The method of claim 8 , further comprising: stimulating emission of light at a wavelength of the optical signal beam in the waveguide region of the gain layer.

Assignees

Inventors

Classifications

  • Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2) · CPC title

  • Control by pressure or deformation · CPC title

  • amorphous, e.g. glass · CPC title

  • using optical pumping · CPC title

  • Ring lasers {(fibre ring lasers H01S3/06791)} · CPC title

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What does patent US9806485B2 cover?
Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum…
Who is the assignee on this patent?
Purnawirman Purnawirman, Watts Michael R, Hosseini Ehsan Shah, and 4 more
What technology area does this patent fall under?
Primary CPC classification H01S3/0632. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 31 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).