Crosstalk, power supply noise and/or EMI reduction methods and apparatuses

Patent metadata

Field	Value
Publication number	US-9806392-B2
Application number	US-201514716101-A
Country	US
Kind code	B2
Filing date	May 19, 2015
Priority date	May 19, 2015
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

Apparatuses and methods associated with shield lines, and/or complementary decoupling capacitors and/or electromagnetic absorbing materials are disclosed herein. In embodiments, an apparatus may include a substrate having a ground plane; and a first and a second transmission line disposed on the substrate. Further, the apparatus may include a shield line constituted with electromagnetic absorbing material disposed between the first and second transmission lines and not coupled with the ground plane. In embodiments, the substrate may further include a power plane having a plurality of edges and a plurality of spacing; a plurality of decoupling capacitors disposed on the power or ground plane; and electromagnetic absorbing materials adhered to the plurality of edges and disposed in the plurality of spacing. Other embodiments may be described and/or claimed.

First claim

What is claimed is:

1. An apparatus, comprising:
a substrate having a ground plane;
a first and a second transmission line disposed on or integrated with the substrate;
a shield line constituted with electromagnetic absorbing material disposed between the first and second transmission lines, and not coupled to the ground plane; and
a soldermask covering the first and second transmission lines and the shield line.

2. The apparatus of claim 1 , wherein the shield line is constituted with electromagnetic absorbing material that attenuates electromagnetic noises from 5 MHz to 40 GHz.

3. The apparatus of claim 1 , wherein the substrate further comprises a dielectric layer disposed on top of the ground plane; and the first and second transmission lines are microstrips disposed on the substrate.

4. The apparatus of claim 1 , further comprising a third and a fourth transmission line disposed on the substrate; wherein the substrate further comprises a dielectric layer disposed on top of the ground plane, and the first and third, and the second and fourth transmission lines are respective members of a first and a second microstrip pair disposed on the substrate.

5. The apparatus of claim 1 , wherein both the soldermask and the shield line have a same height.

6. The apparatus of claim 1 , wherein the shield line has a first height, and the soldermask has a second height greater than the first height.

7. The apparatus of claim 1 , wherein the substrate further comprises a dielectric layer disposed on top of the ground plane; the first and second transmission lines and the shield line are integrated within the dielectric layer; the apparatus further includes another ground plane disposed on top of the dielectric layer; and the first and second transmission lines are striplines.

8. The apparatus of claim 1 , further comprising a third and a fourth transmission line integrated with the substrate; wherein the substrate further comprises a dielectric layer disposed on top of the ground plane; the first, second, third and fourth transmission lines and the shield line are integrated within the dielectric layer; the apparatus further includes another ground plane disposed on top of the dielectric layer; and the first and third, and the second and fourth transmission lines are respective members of a first and a second stripline pair.

9. A method, comprising:
forming a substrate having a ground plane;
forming a first and a second transmission line on or integrated with the substrate;
forming a shield line constituted with electromagnetic absorbing material between the first and second transmission lines, and not coupled with the ground plane; and
forming a soldermask to cover the first and second transmission lines and the shield line.

10. The method of claim 9 , wherein the forming of the shield line comprises forming a shield line constituted with electromagnetic absorbing material that attenuates electromagnetic noises from 5 MHz to 40 GHz.

11. The method of claim 9 , wherein the substrate further comprises a dielectric layer disposed on top of the ground plane; wherein forming the first and second transmission lines comprises disposing first and second microstrips on the substrate.

12. The method of claim 9 , further comprising forming a third and a fourth transmission line; wherein the substrate further comprises a dielectric layer disposed on top of the ground plane; and wherein forming the first and second transmission lines and forming the third and fourth transmission lines comprises disposing first and third members, and second and fourth members of a first and a second microstrip pair on the substrate.

13. The method of claim 9 , wherein the substrate further comprises a dielectric layer disposed on top of the ground plane; the first and second transmission lines and the shield line are integrated within the dielectric layer; and the method further includes forming another ground plane disposed on top of the dielectric layer; wherein forming the first and second transmission lines comprises first and second striplines.

14. The method of claim 9 , further comprising forming a third and a fourth transmission line integrated with the substrate; wherein the substrate further comprises a dielectric layer disposed on top of the ground plane; the first, second, third and fourth transmission lines and the shield line are integrated within the dielectric layer; and the method further includes forming another ground plane disposed on top of the dielectric layer; wherein disposing the first, second, third and fourth transmission lines comprises disposing respective a first and a third, and a second and a fourth member of a first and a second stripline pair.

15. The method of claim 9 , wherein forming the soldermask comprises forming a soldermask have a same height as the shield line.

16. The method of claim 9 , wherein the shield line has a first height, and forming the soldermask comprises forming a soldermask have a second height greater than the first height.

Assignees

• Intel Corp

Inventors

• Huang Shaowu
• Zhang Hanqiao
• Xiao Kai
• Lee Beom-Taek
• Abbott John J
• Charles Gary

Classifications

• H04B3/32

  Reducing cross-talk, e.g. by compensating · CPC title

• H01P3/081 Primary

  Microstriplines · CPC title

• H05K1/02

  Details · CPC title

• H05K9/0022

  of components mounted on printed circuit boards [PCB] (shields integrated within PCB H05K1/0218; shields integrated within component packages H10W42/20) · CPC title

• H05K1/0219

  Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors · CPC title