Method for manufacturing an optoelectronic device
US-2024274747-A1 · Aug 15, 2024 · US
Optoelectronic semiconductor chip and method for the production thereof
US9806223B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9806223-B2 |
| Application number | US-98590311-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 6, 2011 |
| Priority date | Jan 26, 2007 |
| Publication date | Oct 31, 2017 |
| Grant date | Oct 31, 2017 |
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Abstract
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A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.
First claim
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What is claimed is: 1. A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system, comprising the steps of: forming a semiconductor section with at least one p-doped region, and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer being free of p-doped semiconductor material and having at least one n-doped semiconductor layer, wherein an activation step separate from the forming of the p-doped region and suitable for electrically activating the p-doped region is effected before the formation of the covering layer. 2. The method as claimed in claim 1 , wherein the n-doped semiconductor layer is formed with a thickness of >20 nm. 3. The method as claimed in claim 1 , wherein the activation step is effected before the n-doped semiconductor layer is formed. 4. The method as claimed in claim 1 , wherein forming the n-doped semiconductor layer comprises molecular beam epitaxy. 5. The method as claimed in claim 1 , wherein forming the n-doped semiconductor layer comprises metal organic vapor phase epitaxy, using nitrogen sources which do not produce any free hydrogen radicals during the growth. 6. The method as claimed in claim 1 , wherein the covering layer is formed in such a way that a spacer layer with nominally undoped semiconductor material is arranged between the n-doped semiconductor layer and the semiconductor section. 7. The method as claimed in claim 1 , wherein forming the covering layer comprises forming a current spreading layer with a transparent, electrically conductive oxide and the activation step is effected before the current spreading layer is formed. 8. The method as claimed in claim 7 , wherein forming the covering layer comprises epitaxial growth of semiconductor material.
Assignees
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Classifications
Crystal orientations · CPC title
Materials · CPC title
P-type · CPC title
N-type · CPC title
Nitrides · CPC title
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- What does patent US9806223B2 cover?
- A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semicon…
- Who is the assignee on this patent?
- Ahlstedt Magnus, Höppel Lutz, Peter Matthias, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification H01L33/0075. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 31 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).