Integrated photodetector waveguide structure with alignment tolerance
US-2015364619-A1 · Dec 17, 2015 · US
Germanium photodetector with SOI doping source
US9806221B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9806221-B2 |
| Application number | US-201715441345-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 24, 2017 |
| Priority date | Aug 20, 2015 |
| Publication date | Oct 31, 2017 |
| Grant date | Oct 31, 2017 |
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Abstract
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Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) and the doped Si to a second composition of SiGe.
First claim
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The invention claimed is: 1. A method for forming a photodetector, comprising: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; annealing the structure to convert, via the crystallization window, the layer of Ge to a first composition of graded silicon germanium (SiGe) and the doped Si to a second composition of graded SiGe; and doping the first composition of graded SiGe with a p-type dopant forming p-type regions and heavily doping with an n-type dopant forming n-type regions in an alternating sequence. 2. The method of claim 1 , wherein the annealing causes a melting of the Ge layer. 3. The method of claim 2 , wherein Ge diffuses from the melted Ge layer through the crystallization window into the doped Si layer to form the second composition of graded SiGe. 4. The method of claim 3 , wherein the second composition of graded SiGe comprises about 50% Si and about 50% Ge. 5. The method of claim 2 , wherein Si and dopant diffuse from the doped Si layer through the crystallization window into the melted Ge layer to form the first composition of graded SiGe. 6. The method of claim 5 , wherein the first composition of graded SiGe comprises about 99% Ge and about 1% Si. 7. The method of claim 1 , wherein the doped Si layer includes an n-type dopant. 8. The method of claim 1 , further comprising cooling the structure to crystalize the first composition of graded SiGe and the second composition of graded SiGe. 9. The method of claim 1 , further comprising forming a plurality of contacts to the first composition of graded SiGe. 10. The method of claim 1 , wherein the crystallization window has a width from about 0.2 μm to about 1.0 μm.
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L31/1812Primary
Electricity · mapped topic
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- What does patent US9806221B2 cover?
- Various particular embodiments include a method for forming a photodetector, including: forming a structure including a barrier layer disposed between a layer of doped silicon (Si) and a layer of germanium (Ge), the barrier layer including a crystallization window; and annealing the structure to convert, via the crystallization window, the Ge to a first composition of silicon germanium (SiGe) a…
- Who is the assignee on this patent?
- Globalfoundries Inc, Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L31/1812. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 31 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).