Method for manufacturing quantum dot color filter

Patent metadata

Field	Value
Publication number	US-9804489-B2
Application number	US-201514902583-A
Country	US
Kind code	B2
Filing date	Dec 22, 2015
Priority date	Oct 8, 2015
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

The present invention provides a method for manufacturing a quantum dot color filter. The method for manufacturing a quantum dot color filter of the present invention, after forming a blue sub-pixel part of a quantum dot color filter by applying a photolithographic operation to a transparent organic photoresist material, applies hydrophobicity treatment to the transparent organic photoresist layer so as to make use of hydrophobic characteristics so formed to help coat green quantum dot curable paste and red quantum dot photoresist sequentially on corresponding areas to form, in sequence, a green quantum dot curable paste layer and a red quantum dot photoresist layer located thereon, and then applies photolithographic operations to subject portions of the red quantum dot photoresist layer to etching for forming a green sub-pixel part and a red sub-pixel part of the quantum dot color filter, whereby compared to the conventional ways of manufacturing a quantum dot color filter, at least one round of photolithographic operation can be saved to greatly simplify the manufacturing process, reduce cost, and improve manufacturing efficiency, and it only needs to develop one type of quantum dot photoresist so as to greatly reduce difficulty and cost of development.

First claim

What is claimed is:

1. A method for manufacturing a quantum dot color filter, comprising the following steps:
(1) providing a substrate, the substrate comprising a plurality of blue sub-pixel zones, green sub-pixel zones, and red sub-pixel zones; and coating a layer of transparent organic photoresist material on the substrate to form a transparent organic photoresist layer;
(2) subjecting the transparent organic photoresist layer to patterning through a photolithographic operation to remove portions of the transparent organic photoresist layer other than those corresponding to the blue sub-pixel zones in order to obtain a patterned transparent organic photoresist layer, where the patterned transparent organic photoresist layer serves as a blue sub-pixel part of the quantum dot color filter;
(3) subjecting an upper surface of the patterned transparent organic photoresist layer to hydrophobicity treatment;
(4) coating a layer of green quantum dot curable paste on the substrate, wherein the green quantum dot curable paste does not adhere to the patterned transparent organic photoresist layer and fills in grooves delimited by the patterned transparent organic photoresist layer and the substrate so as to form a green quantum dot curable paste layer after being cured, the green quantum dot curable paste layer corresponding to the green sub-pixel zones and the red sub-pixel zones;
(5) coating a layer of red quantum dot photoresist on the substrate, wherein the red quantum dot photoresist does not adhere to the patterned transparent organic photoresist layer and fills in grooves delimited by the patterned transparent organic photoresist layer and the green quantum dot curable paste layer so as to form a red quantum dot photoresist layer, the red quantum dot photoresist layer corresponding to the green sub-pixel zones and the red sub-pixel zones; and
(6) subjecting the red quantum dot photoresist layer to patterning through a photolithographic operation in order to remove portions of the red quantum dot photoresist layer that correspond to the green sub-pixel zones and expose the portions of the green quantum dot curable paste layer located thereunder to thereby form a patterned red quantum dot photoresist layer, wherein the portions of the green quantum dot curable paste layer that correspond to the green sub-pixel zones serve as a green sub-pixel part of the quantum dot color filter and the portions of the green quantum dot curable paste layer that correspond to the red sub-pixel zones and the patterned red quantum dot photoresist layer located thereon serve as a red sub-pixel part of the quantum dot color filter.

2. The method for manufacturing a quantum dot color filter as claimed in claim 1 , wherein Step 1 further comprises, before coating the layer of transparent organic photoresist material, forming a black matrix on the substrate through a photolithographic operation.

3. The method for manufacturing a quantum dot color filter as claimed in claim 2 , wherein the black matrix separates the blue sub-pixel zones, the green sub-pixel zones, and the red sub-pixel zones from each other.

4. The method for manufacturing a quantum dot color filter as claimed in claim 1 further comprising Step 7: after Step 6, forming a green color resist layer on an exposed surface of the green quantum dot curable paste layer and forming a red color resist layer on a surface of the remaining red quantum dot photoresist layer.

5. The method for manufacturing a quantum dot color filter as claimed in claim 1 , wherein the transparent organic photoresist layer formed in Step 1 has a thickness of 0-20 μm.

6. The method for manufacturing a quantum dot color filter as claimed in claim 1 , wherein the substrate provided in Step 1 is used to make an array substrate of a liquid crystal display panel.

7. The method for manufacturing a quantum dot color filter as claimed in claim 1 , wherein the substrate provided in Step 1 is used to make a color filter substrate of a liquid crystal display panel.

8. The method for manufacturing a quantum dot color filter as claimed in claim 1 , wherein the quantum dot color filter is used in a display device having backlighting that is blue light.

9. The method for manufacturing a quantum dot color filter as claimed in claim 1 , wherein the green quantum dot curable paste comprises a curable paste and green quantum dots mixed in the curable paste; the curable paste comprises a thermally curable paste or an ultraviolet (UV) curable paste; and in Step 4, curing is achieved with thermal curing or UV curing.

10. The method for manufacturing a quantum dot color filter as claimed in claim 1 , wherein the patterned transparent organic photoresist layer, after the hydrophobicity treatment of the upper surface thereof, has a height that is greater than heights of the green quantum dot curable paste layer and the patterned red quantum dot photoresist layer; the transparent organic photoresist layer serves as photo spacers of a liquid crystal display panel.

11. A method for manufacturing a quantum dot color filter, comprising the following steps:
(1) providing a substrate, the substrate comprising a plurality of blue sub-pixel zones, green sub-pixel zones, and red sub-pixel zones; and coating a layer of transparent organic photoresist material on the substrate to form a transparent organic photoresist layer;
(2) subjecting the transparent organic photoresist layer to patterning through a photolithographic operation to remove portions of the transparent organic photoresist layer other than those corresponding to the blue sub-pixel zones in order to obtain a patterned transparent organic photoresist layer, where the patterned transparent organic photoresist layer serves as a blue sub-pixel part of the quantum dot color filter;
(3) subjecting an upper surface of the patterned transparent organic photoresist layer to hydrophobicity treatment;
(4) coating a layer of green quantum dot curable paste on the substrate, wherein the green quantum dot curable paste does not adhere to the patterned transparent organic photoresist layer and fills in grooves delimited by the patterned transparent organic photoresist layer and the substrate so as to form a green quantum dot curable paste layer after being cured, the green quantum dot curable paste layer corresponding to the green sub-pixel zones and the red sub-pixel zones;
(5) coating a layer of red quantum dot photoresist on the substrate, wherein the red quantum dot photoresist does not adhere to the patterned transparent organic photoresist layer and fills in grooves delimited by the patterned transparent organic photoresist layer and the green quantum dot curable paste layer so as to form a red quantum dot photoresist layer, the red quantum dot photoresist layer corresponding to the green sub-pixel zones and the red sub-pixel zones; and
(6) subjecting the red quantum dot photoresist layer to patterning through a photolithographic operation in order to remove portions of the red quantum dot photoresist layer that correspond to the green sub-pixel zones and expose the portions of the green quantum dot curable paste layer located thereunder to thereby form a patterned red quantum dot photoresist layer, wherein the portions of the green quantum dot curable paste layer that correspond to the green sub-pixel zones serve as a green sub-pixel part of the quantum dot color filter and the portions of the green quantum dot curable paste layer that correspond to the red sub-pixel zones and the patterned red quantum dot photoresist layer located thereon serve as a red sub-pixel part of the quantum dot color filter;
wherein Step 1 further comprises, before coating the layer of transparent or

Assignees

• Shenzhen China Star Optoelect

Inventors

• Liang Yuheng

Classifications

• G02B5/207

  comprising semiconducting materials · CPC title

• G02B5/201

  in the form of arrays · CPC title

• G02F2202/36

  Micro- or nanomaterials · CPC title

• G02F1/133516

  Methods for their manufacture, e.g. printing, electro-deposition or photolithography · CPC title

• G03F7/0007 Primary

  Filters, e.g. additive colour filters; Components for display devices · CPC title