Combined n-type and p-type MOS-based radiation sensors for environmental compensations

Patent metadata

Field	Value
Publication number	US-9804273-B2
Application number	US-201514870629-A
Country	US
Kind code	B2
Filing date	Sep 30, 2015
Priority date	Oct 17, 2014
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

An apparatus is disclosed comprising a metal oxide semiconductor capacitor (MOSCAP) comprising one or more gate layers disposed over a contiguous radiation-sensitive insulating layer, wherein the contiguous radiation-sensitive insulating layer comprises one or more contacting dielectric layers. A method may be employed to measure a value of a radiation-induced capacitance response of a metal oxide semiconductor capacitor (MOSCAP) from multiple non-contacting gate layers disposed over a radiation-sensitive layer comprising of one or more contacting dielectric layers to thereby enhance a sensitivity and a resolution of a radiation response of the MOSCAP.

First claim

What is claimed is:

1. A method comprising: measuring a first value of a capacitance response parameter of a first sensor comprising an n-type metal oxide semiconductor capacitor (MOSCAP), and
measuring a second value of the response parameter of a second sensor comprising a p-type MOSCAP, wherein the first sensor and the second sensor have a same response to a first stimuli, comprising an incident radiation dose, and a different response to a second stimuli, comprising a environmental parameter, thereby isolating an effect of the first stimuli and the second stimuli on the response parameter when both the first stimuli and the second stimuli are present
the first sensor comprises an n-type metal oxide semiconductor capacitor (MOSCAP) and the second sensor comprise a p-type MOSCAP.

2. The method of claim 1 , wherein a first capacitance parameter of then-type MOSCAP and a second capacitance parameter of the p-type MOSCAP shift in opposite directions in response to incident radiation dose.

3. The method of claim 2 , wherein the first capacitance parameter of the n-type MOSCAP and the second capacitance parameter of the p-type MOSCAP shift in a same direction in response to the environmental parameter.

4. The method of claim 3 , wherein the environmental parameter is temperature.

5. The method of claim 3 , wherein the environmental parameter is humidity.

6. The method of claim 3 , wherein the environmental parameter is electromagnetic interference (EMI).

7. The method of claim 1 , wherein the first value of the response parameter of the first sensor and the second value of the response parameter of the second sensor are displayed on visual display device to a user and/or saved to a non-transient storage medium.

Assignees

• Landauer Inc
• Purdue Research Foundation

Inventors

• Scott Sean M

Classifications

• H01L31/119

  Electricity · mapped topic

• G01T1/026 Primary

  Semiconductor dose-rate meters · CPC title

• H01L27/1443

  Electricity · mapped topic

• G01T7/005

  calibration techniques (stabilization of spectrometer G01T1/40) · CPC title

• G01T7/00

  Details of radiation-measuring instruments · CPC title