Temperature sensor calibration

Patent metadata

Field	Value
Publication number	US-9804036-B2
Application number	US-201414308983-A
Country	US
Kind code	B2
Filing date	Jun 19, 2014
Priority date	Jun 19, 2014
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

Representative implementations of devices and techniques provide calibration for a chip-based temperature sensor. Two or more measurements are taken using a high resolution temperature sensor digitizer, and used to determine a calibration for the temperature sensor, based on a reference temperature value calculated from the measurements.

First claim

What is claimed is:

1. An apparatus, comprising:
one or more bipolar devices arranged to provide a first analog input and a second analog input, wherein the second analog input is based on a difference in base-emitter voltages of the one or more bipolar devices;
an analog-to-digital converter (ADC) arranged to compare the first analog input and the second analog input; and
a multiplexer arranged to substitute an external reference voltage for the second analog input, wherein the ADC is further arranged to:
compare the first analog input and the external reference voltage;
output a first digital result based on comparing the first analog input and the second analog input;
output a second digital result based on comparing the first analog input and the external reference voltage; and
output a third digital result representing a reference temperature based on the first digital result, the second digital result, and the external reference voltage.

2. The apparatus of claim 1 , wherein the multiplexer is further arranged to determine which of the second analog input and the external reference voltage to be compared with the first analog input at the ADC.

3. The apparatus of claim 1 , further comprising a digital filter component arranged to filter an output of the ADC.

4. The apparatus of claim 1 , wherein the one or more bipolar devices comprise bipolar junction transistor devices.

5. The apparatus of claim 1 , wherein the one or more bipolar devices comprise sub-threshold metal-oxide-semiconductor transistor devices.

6. The apparatus of claim 1 , wherein the first analog input comprises a base-emitter voltage of a bipolar device comprising one of the one or more bipolar devices.

7. The apparatus of claim 1 , wherein the first analog input comprises a gate-source voltage of a sub-threshold metal-oxide-semiconductor transistor device comprising one of the one or more bipolar devices, and wherein the second analog input comprises a difference between gate-source voltages of one or more sub-threshold metal-oxide-semiconductor transistor devices comprising the one or more bipolar devices.

8. The apparatus of claim 1 , wherein the ADC is arranged to output the third digital result representing the reference temperature based on the first digital result, the second digital result, and an ideality factor, wherein the ideality factor is based on the difference in the base-emitter voltages and a collector current at a known temperature.

9. The apparatus of claim 1 , wherein the ADC is arranged to output the third digital result by at least calculating ΔV BE according to a formula:
ΔV BE =D 1 *V EXT /( D 2*α)

wherein ΔV BE is the difference in the base-emitter voltages of the one or more bipolar devices,
wherein V EXT is the external reference voltage,
wherein D 1 is the first digital result,
wherein D 2 is the second digital result, and
wherein α is a scaling factor applied to ΔV BE .

10. The apparatus of claim 1 , wherein the ADC is arranged to output the third digital result by at least calculating ΔV BE according to a formula:
ΔV BE =( V EXT /α)*{ D 1/(1- D 1)}*{(1- D 2 a ) D 2 a}

wherein ΔV BE is the difference in the base-emitter voltages of the one or more bipolar devices,
wherein V EXT is the external reference voltage,
wherein D 1 is the first digital result,
wherein D 2 is the second digital result, and
wherein α is a scaling factor applied to ΔV BE .

11. The apparatus of claim 1 , wherein the ADC is arranged to output the third digital result by at least calculating ΔV BE according to a formula:
ΔV BE =D 1 *V EXT /D 2
wherein ΔV BE is the difference in the base-emitter voltages of the one or more bipolar devices,
wherein V EXT is the external reference voltage,
wherein D 1 is the first digital result,
wherein D 2 is the second digital result, and
wherein α is a scaling factor applied to ΔV BE .

12. The apparatus of claim 1 , wherein the ADC is arranged to output the third digital result by at least calculating ΔV BE according to a formula:
ΔV BE =V EXT *D 2 /D 1
wherein ΔV BE is the difference in the base-emitter voltages of the one or more bipolar devices,
wherein V EXT is the external reference voltage,
wherein D 1 is the first digital result,
wherein D 2 is the second digital result, and
wherein α is a scaling factor applied to ΔV BE .

13. A method, comprising:
providing a first analog input and a second analog input from at least one bipolar device of a digital temperature sensor, wherein the second analog input is based on a difference in base-emitter voltages of the at least one bipolar device;
receiving the first analog input and the second analog input at an analog-to-digital converter (ADC) of the digital temperature sensor;
taking a first measurement with the digital temperature sensor to get a first digital result;
substituting an external reference voltage for the second analog input;
taking a second measurement with the digital temperature sensor to get a second digital result;
determining the difference in the base-emitter voltages of the at least one bipolar device based on the first digital result and the second digital result; and
determining a reference temperature based on the difference in the base-emitter voltages of the at least one bipolar device.

14. The method of claim 13 , further comprising multiplexing the second analog input and the external reference voltage to the ADC, based on whether the first or second measurement is being taken.

15. The method of claim 13 , further comprising determining the reference temperature based on the difference in base-emitter voltages of the at least one bipolar device divided by a reference voltage comprising the base-emitter voltage of one of the bipolar devices.

16. The method of claim 15 , further comprising also determining the reference temperature based on the external reference voltage divided by the reference voltage comprising the base-emitter voltage of the at least one bipolar device.

17. The method of claim 13 , further comprising determining the reference temperature based on a reference voltage comprising the base-emitter voltage of the at least one bipolar device divided by the difference in base-emitter voltages of the at least one bipolar device.

18. The method of claim 17 , further comprising also determining the reference temperature based on the reference voltage comprising the base-emitter voltage of the at least one bipolar device divided by the external reference voltage.

19. The method of claim 13 , further comprising comparing a temperature measured by a temperature sensor to the reference temperature to calibrate the temperature sensor.

20. The method claim 13 , wherein the bipolar device comprises sub-threshold metal-oxide-semiconductor (MOS) devices, referencing the gate-source voltage (V GS ) of the MOS devices.

21. The method of claim 13 , further comprising determining the reference temperature inclusive of a temperature dependent ideality factor q contribution using electrical measurements of ΔV BE and V BE , wherein ΔV BE is the difference in base-emitter voltages of the at least one bipolar device, and wherein V BE is a reference voltage comprising the base-emitter voltage of the at least one bipolar device.

Assignees

• Infineon Technologies Ag

Inventors

• Ma Fan Yung

Classifications

• G01K15/005 Primary

  Calibration · CPC title

• G01K7/015

  using microstructures, e.g. made of silicon · CPC title