Semiconductor device and production method therefor
US-2015014842-A1 · Jan 15, 2015 · US
US9803111B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9803111-B2 |
| Application number | US-201214379961-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 1, 2012 |
| Priority date | Feb 24, 2012 |
| Publication date | Oct 31, 2017 |
| Grant date | Oct 31, 2017 |
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An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): wherein R 1 represents an electron-donating group.
Opening claim text (preview).
The invention claimed is: 1. An adhesive for a semiconductor, comprising an epoxy resin in an amount of 5 to 75% by mass based on the total amount of the adhesive, a curing agent, a phenoxy resin, at least one compound selected from a group consisting of methylsuccinic acid, 2-methylglutaric acid, 2-methyladipic acid, 2-methylpimelic acid, and 2-methylsuberic acid in an amount of 0.5 to 10% by mass based on the total amount of the adhesive, and resin fillers, wherein a mass ratio of the content of the epoxy resin to the content of the phenoxy resin is 0.01 to 5. 2. The adhesive for a semiconductor according to claim 1 , wherein the at least one compound is a fluxing agent. 3. The adhesive for a semiconductor according to claim 1 , wherein the phenoxy resin has a weight average molecular weight of 10000 or more. 4. The adhesive for a semiconductor according to claim 1 , wherein the adhesive has a film shape. 5. A fluxing agent, comprising at least one compound selected from a group consisting of methylsuccinic acid, 2-methyiglutaric acid, 2-methyladipic acid, 2-methylpimelic acid, and 2-methylsuberic acid, wherein the fluxing agent is blended in an adhesive for a semiconductor comprising an epoxy resin in an amount of 5 to 75% by mass based on the total amount of the adhesive, a curing agent, a phenoxy resin, the fluxing agent in an amount of 0.5 to 10% by mass based on the total amount of the adhesive, and resin fillers, and a mass ratio of the content of the epoxy resin to the content of the phenoxy resin is 0.01 to 5. 6. A manufacturing method for a semiconductor device, wherein connection portions of a semiconductor chip are electrically connected to connection portions of a wiring circuit substrate or connection portions of a plurality of semiconductor chips are electrically connected to each other, the method comprising a step of sealing at least part of the connection portions with the adhesive for a semiconductor according to claim 1 . 7. A semiconductor device prepared by the manufacturing method according to claim 6 . 8. The adhesive for a semiconductor according to claim 1 , wherein the adhesive has an insulation property. 9. The fluxing agent according to claim 5 , wherein the adhesive has an insulation property. 10. A fluxing agent, comprising at least one compound selected from a group consisting of methylsuccinic acid, 2-methyiglutaric acid, 2-methyladipic acid, 2-methylpimelic acid, and 2-methylsuberic acid, wherein the fluxing agent is configured to be blended in an adhesive for a semiconductor such that the adhesive comprises an epoxy resin in an amount of 5 to 75% by mass based on the total amount of the adhesive, a curing agent, a phenoxy resin, the fluxing agent in an amount of 0.5 to 10% by mass based on the total amount of the adhesive, and resin fillers, and a mass ratio of the content of the epoxy resin to the content of the phenoxy resin is 0.01 to 5. 11. The adhesive for a semiconductor according to claim 1 , wherein the resin fillers comprise at least one selected from the group consisting of a polyurethane resin and a polyimide resin. 12. The fluxing agent according to claim 5 , wherein the resin fillers comprise at least one selected from the group consisting of a polyurethane resin and a polyimide resin. 13. The fluxing agent according to claim 10 , wherein the resin fillers comprise at least one selected from the group consisting of a polyurethane resin and a polyimide resin.
Subject matter not provided for in other groups of this subclass · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
between stacked chips · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
between stacked chips · CPC title
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