Branched siloxanes and methods for synthesis
US-9156863-B2 · Oct 13, 2015 · US
US9802968B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9802968-B2 |
| Application number | US-201615232138-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 9, 2016 |
| Priority date | Feb 19, 2010 |
| Publication date | Oct 31, 2017 |
| Grant date | Oct 31, 2017 |
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The present invention describes branched and functionalized siloxanes and methods for making such compounds. The compounds have a variety of uses. One preferred application is as novel planarizing material for lithogaphy, in which case functionalized branched siloxane, such as an epoxy-modified branched siloxane is particularly useful.
Opening claim text (preview).
The invention claimed is: 1. A method of reverse-tone step and flash imprint lithography comprising: a) providing a substrate; b) imprinting features upon said substrate; c) planarizing using a functionalized branched siloxane having the structure: to create a layer over the features; d) etching said layer with fluorine; and e) etching with O 2 . 2. The method of claim 1 , wherein said features in step b) are imprinted by a quartz template mold. 3. The method of claim 1 , wherein said substrate in step a) is coated with an underlayer prior to step b). 4. The method of claim 1 , wherein said layer created in step c) further includes a photoacid generator. 5. The method of claim 4 , wherein said photoacid generator has the structure: 6. The method of claim 1 , wherein said imprinting of step b) is performed with imprint resist comprising: 7. A method of reverse-tone step and flash imprint lithography comprising: a) providing a substrate; b) coating said substrate with an underlayer; c) applying an imprint resist on said underlayer; d) imprinting features on said imprint resist with a template mold; e) planarizing using a branched and functionalized siloxane having the structure: to create a layer over the features; f) etching said layer with fluorine; and g) etching with O 2 . 8. The method of claim 7 , wherein said layer created in step e) further includes a photoacid generator. 9. The method of claim 8 , wherein said photoacid generator has the structure: 10. The A-method of claim 7 , wherein said imprint resist used in step c):
the removal being chemical etching · CPC title
Hydrosilylation reactions · CPC title
with hydrocarbon radicals, substituted by singly or doubly bound oxygen atoms · CPC title
Reactions involving a bond of the Si-O-Si linkage · CPC title
Compounds with a Si-H linkage · CPC title
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