Semiconductor devices including polar insulation layer capped by non-polar insulation layer
US-9117817-B2 · Aug 25, 2015 · US
US9802870B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9802870-B2 |
| Application number | US-201214365255-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 27, 2012 |
| Priority date | Dec 14, 2011 |
| Publication date | Oct 31, 2017 |
| Grant date | Oct 31, 2017 |
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A method of treating silicon carbide fibers comprises phosphating heat treatment in a reactive gas so as to form a coating around each fiber for protection against oxidation. The coating comprises a surface layer of silicon pyrophosphate crystals and at least one underlying bilayer system comprising a layer of a phosphosilicate glass and a layer of microporous carbon.
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The invention claimed is: 1. A method of treating silicon carbide fibers, the method comprising phosphating heat treatment in a reactive gas so as to form a coating around each fiber for protection against oxidation, the coating comprising a surface layer of silicon pyrophosphate crystals and at least one underlying bilayer system comprising a layer of a phosphosilicate glass and a layer of microporous carbon. 2. A method according to claim 1 , wherein before the phosphating heat treatment in a reactive gas, a micro-mesoporous or microporous carbon layer is formed on the surface of each fiber, and after the phosphating heat treatment said micro-mesoporous or microporous carbon layer is interposed between the surface layer of silicon pyrophosphate crystals and said at least one bilayer system comprising a layer of a phosphosilicate glass and a layer of microporous carbon. 3. A method according to claim 2 , wherein the micro-mesoporous carbon layer is formed by etching the surface of each fiber with a phosphorus-containing agent in a gas followed by treatment to eliminate the phosphosilicate glass and the silicon pyrophosphate formed during the etching with the phosphorus-containing agent in a gas. 4. A method according to claim 3 , wherein the treatment for eliminating the phosphosilicate glass and the silicon pyrophosphate is performed by etching the surface of the fibers with a basic compound. 5. A method according to claim 2 , wherein the microporous carbon layer formed before phosphating heat treatment is formed by heat treatment in a reactive gas performed with at least one reactive gas comprising a halogen atom. 6. A method according to claim 5 , wherein the reactive gas comprising a halogen atom further comprises chlorine gas, fluorine gas, or hydrogen chloride. 7. A method according to claim 1 , wherein the protective coating against oxidation presents thickness lying in the range 50 nm to 1 μm. 8. A method according to claim 1 , wherein the phosphating heat treatment in a reactive gas is performed at temperatures lower than the thermal stability temperature of silicon carbide fibers. 9. A method of fabricating a fiber preform comprising forming a fiber structure at least from silicon carbide fibers, wherein the fibers are treated in accordance with the treatment method of claim 1 . 10. A method according to claim 9 , wherein the fibers are treated before forming the fiber structure. 11. A method according to claim 9 , wherein the fibers are treated after forming the fiber structure. 12. A method of fabricating a composite material part comprising making a fiber preform according to the method of claim 9 , and densifying said preform.
comprising fillers or reinforcement {(non-woven fabrics per se D04H1/00, D04H3/00)} · CPC title
Coating or impregnating {independently of the moulding or shaping step}(applying liquids in general B05) · CPC title
Silicon carbide · CPC title
Carbon · CPC title
with phosphorus or compounds thereof, e.g. with chlorophosphonic acid or salts thereof (with phosphines or diphosphines D06M11/01; with selenium or tellurium compounds D06M11/52; with polyphosphazene or derivatives thereof D06M15/673) · CPC title
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