Image sensor, method of operating the same, and image processing system including the same

Patent metadata

Field	Value
Publication number	US-9800814-B2
Application number	US-201514816486-A
Country	US
Kind code	B2
Filing date	Aug 3, 2015
Priority date	Oct 2, 2012
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.

First claim

What is claimed is:

1. An image sensor comprising:
a pixel array including a plurality of unit pixels; and
a readout block configured to sense a pixel signal output from each of the plurality of unit pixels, each unit pixel having a single transistor and a photodiode, and
wherein the single transistor includes,
the photodiode,
a drain and a source, formed in a semiconductor substrate, of the single transistor,
a first gate formed by a recessed region between the drain and the source, and
a gate insulating layer formed on a side of the first gate and below the first gate for insulation of the first gate; and
wherein each unit pixel further includes,
a first region formed below the drain, the source and the first gate and doped with first-type impurities, and
a second region formed below the first region and doped with second-type impurities.

2. The image sensor of claim 1 , wherein the photodiode is formed within the first region, and doped with the first-type impurities.

3. The image sensor of claim 1 , wherein each unit pixel further comprises a trench for electrical isolation from adjacent unit pixel.

4. The image sensor of claim 3 , wherein each unit pixel further comprises a second gate formed within the trench.

5. The image sensor of claim 4 , wherein the photodiode is closer to the drain than to the source, the second gate is configured to receive a back-gate voltage from a row driver block, and the photodiode is a virtual photodiode formed by the back-gate voltage.

6. The image sensor of claim 1 , wherein a top surface of the photodiode is lower than a top surface of the source of the single transistor and a top surface of the drain of the single transistor.

7. The image sensor of claim 1 , further comprising:
a channel connecting the source and the drain of the single transistor with each other, and
wherein the channel has at least one side contacting the photodiode and is formed using one of silicon Si, germanium Ge, and silicon-germanium SiGe.

8. The image sensor of claim 1 , further comprising:
a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode by selectively manipulating a source voltage and a gate voltage of each of the single transistors included in the row operating in the readout mode.

9. The image sensor of claim 8 , wherein
the row driver block is configured to enable the plurality of unit pixels to enter an integration mode and a reset mode by controlling the source voltage and the gate voltage of the single transistor,
the photodiode is configured to accumulate photocharge varying with intensity of incident light in the integration mode, and
the single transistor is configured to eliminate the photocharge in the reset mode.

10. An image sensor comprising:
a pixel array including a plurality of unit pixels configured to output pixel signals, each unit pixel having a single transistor and a photodiode, and
wherein the single transistor includes,
a drain and a source formed in a semiconductor substrate,
a first gate formed by a recessed region between the drain and the source, and
a gate insulating layer formed on a side of the first gate and below the first gate for insulation of the first gate; and

wherein each unit pixel further includes,
a first region formed below the drain, the source and the first gate and doped with first-type impurities, and
a second region formed below the first region and doped with second-type impurities.

11. The image sensor of claim 10 , further comprising:
a channel connecting the source and the drain of the single transistor with each other, and wherein
the photodiode is formed below the channel, and doped with first-type impurities.

12. The image sensor of claim 10 , wherein each unit pixel further comprises:
a trench for electrical isolation from adjacent unit pixel.

13. The image sensor of claim 12 , wherein each unit pixel further comprises:
a second gate formed within the trench.

14. The image sensor of claim 13 , wherein the second gate is configured to receive a back-gate voltage from a row driver block to enable the plurality of unit pixels in a row to enter a readout mode.

15. The image sensor of claim 10 , wherein the photodiode is configured to accumulate photocharge therein during an integration mode and the single transistor is configured to discharge the photocharge during a reset mode, and wherein the source of the single transistor is configured to receive a source voltage, the drain of the single transistor is configured to receive a column voltage and the first gate in the recessed region is configured to receive a gate voltage.

16. The image sensor of claim 15 , further comprising:
a plurality of sense amplifiers configured to amplify the pixel signals based on the pixel signals and a reference during a readout mode; and
a row driver configured to selectively manipulate the source voltage to the source and the gate voltage to the drain of each of a plurality of the single transistor in a driven row of the pixel array to put the plurality of the single transistor in the driven row into one of the readout mode, the integration mode and the reset mode.

17. The image sensor of claim 16 , wherein the photodiode is configured to vary a threshold voltage of an associated transistor by varying a voltage level of a bulk of the associated transistor based on an amount of the photocharge therein.

18. The image sensor of claim 17 , wherein the image sensor is configured to perform analog to digital conversion by varying the threshold voltage of the plurality of the single transistor without use of an analog to digital conversion circuit.

Assignees

• Jin Young Gu
• Jung Ju Hwan
• Park Yoon Dong
• Samsung Electronics Co Ltd

Inventors

• Jin Young Gu
• Jung Ju Hwan
• Park Yoon Dong

Classifications

• H04N25/778 Primary

  comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N5/3745

  Electricity · mapped topic

• G06T2207/10024

  Color image · CPC title