High resolution thermo-electric nanowire and graphene coupled detector system
US-2016169736-A1 · Jun 16, 2016 · US
US9800805B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9800805-B2 |
| Application number | US-201113019875-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 2, 2011 |
| Priority date | Feb 2, 2011 |
| Publication date | Oct 24, 2017 |
| Grant date | Oct 24, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An apparatus, system, and method are disclosed for a frequency selective imager. In particular, the frequency selective imager includes an array of pixels arranged in a focal plane array. Each pixel includes at least one nanoparticle-sized diameter thermoelectric junction that is formed between nanowires of different compositions. When a nanoparticle-sized diameter thermoelectric junction senses a photon, the nanoparticle-sized diameter thermoelectric junction emits an electrical pulse voltage that is proportional to an energy level of the sensed photon. In one or more embodiments, the frequency selective imager is a frequency selective optical imager that is used to sense photons having optical frequencies. In at least one embodiment, at least one of the nanowires in the frequency selective imager is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te).
Opening claim text (preview).
I claim: 1. A frequency selective imager, the imager comprising: an array of pixels arranged in a focal plane array, wherein each of the pixels includes at least one nanoparticle-sized diameter thermoelectric junction comprising an interface between two nanowires of different materials, wherein the two different materials both comprise a single element material or the two different materials both comprise a compound material, and wherein when the at least one nanoparticle-sized diameter thermoelectric junction senses at least one photon, each of the at least one nanoparticle-sized diameter thermoelectric junction emits at least one electrical pulse having a voltage that is proportional to an energy level related to a wavelength of the at least one photon, thereby discriminating the wavelength of the at least one photon. 2. The frequency selective imager of claim 1 , wherein at least one of the nanowires is manufactured from a compound material including Bismuth (Bi) and Tellurium (Te). 3. The frequency selective imager of claim 1 , wherein the imager is a frequency selective optical imager that is used to sense photons having optical frequencies. 4. The frequency selective imager of claim 1 , wherein a material of at least one of the nanowires is selected according to a frequency of the at least one photon that is to be sensed. 5. The frequency selective imager of claim 1 , wherein a diameter of the at least one nanoparticle-sized diameter thermoelectric junction is selected according to a frequency of the at least one photon that is to be sensed.
Related publications grouped by family.
Answers are generated from the same data shown on this page.