PN junction chemical sensor

Patent metadata

Field	Value
Publication number	US-9799757-B2
Application number	US-92266509-A
Country	US
Kind code	B2
Filing date	Mar 9, 2009
Priority date	Mar 14, 2008
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A sensor device ( 100, 2800 ) for detecting particles, the sensor device ( 100, 2800 ) comprising a substrate ( 102 ), a first doped region ( 104 ) formed in the substrate ( 102 ) by a first dopant of a first type of conductivity, a second doped region ( 106, 150 ) formed in the substrate ( 102 ) by a second dopant of a second type of conductivity which differs from the first type of conductivity, a depletion region ( 108 ) at a junction between the first doped region ( 104 ) and the second doped region ( 106, 150 ), a sensor active region ( 110 ) adapted to influence a property of the depletion region ( 108 ) in the presence of the particles, and a detection unit ( 112 ) adapted to detect the particles based on an electric measurement performed upon application of a predetermined reference voltage between the first doped region ( 104 ) and the second doped region ( 106, 150 ), the electric measurement being indicative of the presence of the particles in the sensor active region ( 110 ).

First claim

The invention claimed is:

1. A sensor device for detecting particles, the sensor device comprising:
a substrate;
a first doped region formed in the substrate by a first dopant of a first type of conductivity;
a second doped region formed in the substrate by a second dopant of a second type of conductivity which differs from the first type of conductivity, wherein the second doped region includes a lower doped region of the second conductivity type and a higher doped region of the second conductivity type;
a depletion region at a junction between the first doped region and the second doped region, wherein the lower doped region is adjacent to the first doped region and located between the first doped region and the higher doped region;
a sensor active region configured and arranged to influence a property of the depletion region in the presence of the particles; and
a detection circuit configured and arranged to detect the particles based on an electric measurement performed upon application of a predetermined reference voltage between the first doped region and the second doped region, the electric measurement being indicative of current passing through the depletion region while the presence of the particles in the sensor active region influence the current passing through the depletion region.

2. The sensor device according to claim 1 , wherein
a substrate configured and arranged to receive a sample, in the form of a liquid or solid substance, in an aperture of the substrate;
wherein the sensor active region is configured and arranged to access the sample in the aperture and influence the property of the depletion region in the presence of the particles; and
the first doped region is a p-doped region and the second doped region is an n-doped region.

3. The sensor device according to claim 1 , wherein
the sensor active region is configured and arranged to influence a value of a breakdown voltage of an arrangement formed by the first doped region, the second doped region and the depletion region in the presence of the particles.

4. The sensor device according to claim 1 , wherein
the substrate includes a dopant having the first conductivity type; and
the sensor active region comprises capture-particles configured and arranged for attaching with the particles.

5. The sensor device according to claim 4 , wherein the sensor active region comprises a dielectric layer between the capture particles and the depletion region.

6. The sensor device according to claim 1 , wherein the detection circuit is configured and arranged to detect the particles by performing the electric measurement at or around a breakdown voltage, as the predetermined reference voltage, of an arrangement formed by the first doped region, the second doped region and the depletion region.

7. The sensor device according to claim 1 , wherein the detection circuit is configured and arranged for operating an arrangement formed by the first doped region, the second doped region and the depletion region with a reverse bias.

8. The sensor device according to claim 1 , wherein the detection circuit is configured and arranged to detect the particles based on a shift of a breakdown voltage of an arrangement formed by the first doped region, the second doped region and the depletion region with a reverse bias.

9. The sensor device according to claim 1 , wherein the detection circuit is configured and arranged to detect the particles by:
determining the predetermined reference voltage as a breakdown voltage of an arrangement formed by the first doped region, the second doped region and the depletion region in the absence of the particles;
measuring an electric current at the breakdown voltage of the arrangement in the absence of the particles;
measuring, in the presence of the particles, an electric current passing through the depletion region at the breakdown voltage of the arrangement determined in the absence of the particles; and
comparing the electric current measured in the presence of the particles and in the absence of the particles.

10. The sensor device according to claim 1 , configured and arranged to detect electrically charged particles.

11. The sensor device according to claim 1 , wherein the substrate comprises a plurality of trenches filled at least partially with dielectric material and extending from the first doped region to the second doped region.

12. The sensor device according to claim 11 , comprising an electrically conductive inlay in the dielectric material of at least a part of the plurality of trenches.

13. The sensor device according to claim 11 , wherein the plurality of trenches is part of the sensor active region.

14. The sensor device according to claim 2 , configured and arranged in that the sample including the particles is free from a contact with electrical connections of the sensor device.

15. The sensor device according to claim 1 , wherein the property is a size of the depletion region.

16. The sensor device according to claim 1 , wherein the depletion region has a concentration of charge carriers which is one of: at least 10 2 times, at least 10 3 times, and at least 10 4 times smaller than a concentration of charge carriers in the first doped region and/or in the second doped region.

17. A sensor device for detecting particles, the sensor device comprising:
a substrate;
a first doped region formed in the substrate by a first dopant of a first type of conductivity;
a second doped region formed in the substrate by a second dopant of a second type of conductivity which differs from the first type of conductivity, wherein the second doped region comprises a highly doped region and a lowly doped region;
a depletion region at a junction between the first doped region and the second doped region, wherein the lowly doped region is arranged adjacent to the first doped region to form the depletion region at the junction with the first doped region;
a sensor active region configured and arranged to influence a property of the depletion region in the presence of the particles; and
a detection circuit configured and arranged to detect the particles based on an electric measurement performed upon application of a predetermined reference voltage between the first doped region and the second doped region, the electric measurement being indicative of current passing through the depletion region while the presence of the particles in the sensor active region influence the current passing through the depletion region.

18. The sensor device according to claim 17 , wherein the sensor active region is provided directly on the depletion region.

19. The sensor device according to claim 1 , configured and arranged as one of a biosensor device, a chemical sensor device, a pH sensor device, an enzymatic sensor device, a DNA sensor device, and a protein sensor device.

20. A method of detecting particles, the method comprising:
providing a depletion region at a junction between a first doped region formed in a substrate by a first dopant of a first type of conductivity and a second doped region formed in the substrate by a second dopant of a second type of conductivity which differs from the first type of conductivity, wherein the second doped region includes a lower doped region and a higher doped region, and the lower doped region is adjacent to the first doped region and located between the first doped region and the higher doped region;
providing access of a fluidic sample comprising the particles to a sensor active region

Assignees

• Gridelet Evelyne
• Huerta Almudena
• Goarin Pierre
• Sonsky Jan
• Nxp Bv

Inventors

• Gridelet Evelyne
• Huerta Almudena
• Goarin Pierre
• Sonsky Jan

Classifications

• H10D12/211 Primary

  Gated diodes · CPC title

• H01L29/7391 Primary

  Electricity · mapped topic

• G01N27/4145

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title