Methods and systems of operating a double-sided double-base bipolar junction transistor
US-2024396546-A1 · Nov 28, 2024 · US
US9799731B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9799731-B2 |
| Application number | US-201615004872-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 22, 2016 |
| Priority date | Jun 24, 2013 |
| Publication date | Oct 24, 2017 |
| Grant date | Oct 24, 2017 |
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Power is inverted using double-base-contact bidirectional bipolar transistors in a three-level-inverter topology. The transistors not only switch to synthesize a PWM approximation of the desired AC waveform, but also have transient phases of diode conduction before each full turn-on or turn-off.
Opening claim text (preview).
The invention claimed is: 1. A method of inverting power, comprising the actions of: a) providing a neutral line, and hot lines which are respectively positive and negative with reference to the neutral line; and b) operating bidirectional dual-base-contact transistors to selectably connect each output line to the neutral line or to one of the hot lines, to thereby synthesize an AC waveform on each output line; wherein step b operates the transistors as diodes before full turn-on and before full turn-off, and also flows base current, at full turn-on, to lower the voltage drop across each said transistor. 2. The method of claim 1 , wherein the providing step generates the neutral line from two of the hot lines. 3. The method of claim 1 , wherein step b, for each of the transistors operated thereby, flows base current, at turn-on, through a base contact which is nearest whichever side of the respective transistor is instantaneously operating as a collector, as determined by an external voltage polarity. 4. The method of claim 1 , wherein each of the transistors is npn. 5. The method of claim 1 , wherein each of the transistors is built in silicon carbide. 6. The method of claim 1 , wherein each of the transistors is a three-layer four-terminal device. 7. A power inverter, comprising: a neutral line, and hot lines which are respectively positive and negative with reference to the neutral line; a plurality of output lines, and a plurality of bidirectional dual-base-contact transistors each connected between one of the output lines and one of the neutral and hot lines; and control circuitry which operates the transistors to selectably connect each output line to the neutral line or to one of the hot lines at various times, to thereby synthesize an AC waveform on each output line. 8. The inverter of claim 7 , wherein the neutral line is generated from two of the hot lines. 9. The inverter of claim 7 , wherein each of the transistors is npn. 10. The inverter of claim 7 , wherein each of the transistors is built in silicon carbide. 11. The inverter of claim 7 , wherein each of the transistors is a three-layer four-terminal device. 12. A power inverter which operates from positive, negative, and neutral lines, comprising: a plurality of output lines, and a plurality of bidirectional dual-base-contact bipolar transistors each connected between one of the output lines and one of the positive, negative, and neutral lines; and control circuitry which operates the transistors to selectably connect each output line, at chosen times, to one of the positive, negative, and neutral lines, to thereby synthesize an AC waveform on each output line. 13. The inverter of claim 12 , wherein the neutral line is generated by averaging the positive and negative lines. 14. The inverter of claim 12 , wherein each of the transistors is npn. 15. The inverter of claim 12 , wherein each of the transistors is built in silicon carbide. 16. The inverter of claim 12 , wherein each of the transistors is a three-layer four-terminal device.
Electricity · mapped topic
the devices being bipolar transistors (bipolar transistors having four or more electrodes H03K17/72) · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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