Semiconductor device and method of making the same

Patent metadata

Field	Value
Publication number	US-9799705-B1
Application number	US-201615297164-A
Country	US
Kind code	B1
Filing date	Oct 19, 2016
Priority date	Sep 8, 2016
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

The present invention provides a semiconductor device. The semiconductor device includes a contact structure disposed in a first dielectric layer, a second dielectric layer disposed on the first dielectric layer and having an opening disposed therein, a spacer disposed in the opening and partially covering the contact structure, and a resistive random-access memory (RRAM) disposed on the contact structure and directly contacting the spacer, wherein the RRAM includes a bottom electrode, a top electrode, and a switching resistance layer disposed between the bottom electrode and the top electrode.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a contact structure, disposed in a first dielectric layer;
a second dielectric layer, disposed on the first dielectric layer, and the second dielectric layer comprising an opening;
a first spacer disposed in the opening and partially covering the contact structure; and
a resistive random-access memory (RRAM) at least disposed on the contact structure, and directly contacting the first spacer, wherein the RRAM comprises a bottom electrode, a top electrode and a switching resistance layer disposed between the bottom electrode and the top electrode, wherein the RRAM is partially disposed in the opening, and the RRAM has a concave top surface.

2. The semiconductor device of claim 1 , wherein the bottom electrode comprise
titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN), platinum (Pt), gold (Au), copper (Cu), aluminum copper (AlCu), or a combination thereof.

3. The semiconductor device of claim 1 , wherein the switching resistance layer comprises titanium oxide (TiO), nickel oxide (NiO), tungsten oxide (WO 3 ), zirconium oxide (ZrO), copper oxide (CuO), hafnium oxide (HfO), tantalum oxide (TaO), zinc oxide (ZnO), alumina (Al 2 O 3 ), and molybdenum oxide (MoO).

4. The semiconductor device of claim 1 , wherein a width of the RRAM is equal to a width of the opening.

5. The semiconductor device of claim 4 , wherein the width of the RRAM is equal to or smaller than 90 nanometers.

6. The semiconductor device of claim 1 , further comprising at least one second spacer disposed on the second dielectric layer, the second spacer directly contacting a sidewall of the RRAM.

7. The semiconductor device of claim 6 , wherein the second spacer further directly contacts the first spacer.

8. The semiconductor device of claim 1 , further comprising a transistor, and the contact structure is electrically connected to a source/drain of the transistor.

9. The semiconductor device of claim 1 , wherein the contact structure comprises copper.

10. A method for forming a semiconductor device, comprising:
providing a contact structure in a first dielectric layer;
forming a second dielectric layer on the first dielectric layer;
performing a first etching process to form an opening in the second dielectric layer;
forming a first spacer in the opening, the first spacer partially covering the contact structure; and
forming a resistive random-access memory (RRAM) on the contact structure, the RRAM directly contacting the first spacer, wherein the RRAM is partially disposed in the opening, and the RRAM has a concave top surface.

11. The method of claim 10 , wherein a method for forming the RRAM comprises:
forming a bottom electrode material layer on the second dielectric layer, on the first spacer and on the contact structure;
forming a switching resistance material layer on the bottom electrode material layer;
forming a top electrode material layer on the switching resistance material layer; and
performing a second etching process to remove parts of the bottom electrode material layer, parts of the switching resistance material layer and parts of the top electrode material layer.

12. The method of claim 11 , wherein the second etching process is a gas etching process with chlorine gas.

13. The method of claim 11 , after performing the second etching process, parts of the first spacer is exposed.

14. The method of claim 10 , wherein the switching resistance layer comprises titanium oxide (TiO), nickel oxide (NiO), tungsten oxide (WO 3 ), zirconium oxide (ZrO), copper oxide (CuO), hafnium oxide (HfO), tantalum oxide (TaO), zinc oxide (ZnO), alumina (Al 2 O 3 ), and molybdenum oxide (MoO).

15. The method of claim 10 , wherein a width of the RRAM is equal to a width of the opening.

16. The method of claim 15 , wherein the width of the RRAM is equal to or smaller than 90 nanometers.

17. The method of claim 10 , further comprising forming at least one second spacer disposed on the second dielectric layer, the second spacer directly contacting a sidewall of the RRAM.

18. The method of claim 17 , wherein the second spacer further directly contacts the first spacer.

Assignees

• United Microelectronics Corp

Inventors

• Yi Liang
• Hsu Chia-Ching
• Wang Shen-De
• Chen Ko-Chi
• Du Guoan

Classifications

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H01L45/1253

  Electricity · mapped topic

• H01L45/146

  Electricity · mapped topic

• H01L45/1675

  Electricity · mapped topic

• H01L27/2436 Primary

  Electricity · mapped topic