Method of planarizing a film layer

Patent metadata

Field	Value
Publication number	US-9799529-B2
Application number	US-201615072792-A
Country	US
Kind code	B2
Filing date	Mar 17, 2016
Priority date	Mar 17, 2016
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A method of fabricating a semiconductor device is disclosed. The method includes forming a first flowable-material (FM) layer over a substrate. A top surface of the first FM layer in a first region is higher than a top surface of the first FM layer in a second region. The method also includes forming a sacrificial plug to cover the first FM layer in the first region, forming a second FM layer over the sacrificial plug in the first region and over the first FM layer in the second region, performing a first recessing process such that the second FM layer is removed in the first region and performing a second recessing process on the second FM layer in the second region while the first FM layer is protected by the sacrificial plug in the first region.

First claim

What is claimed is:

1. A method comprising:
forming a first flowable-material (FM) layer over a substrate, the substrate having a first region and a second region, wherein a top surface of the first FM layer in the first region is higher than a top surface of the first FM layer in the second region;
forming a sacrificial plug to cover the first FM layer in the first region, including:
forming a sacrificial layer over the first FM layer, and
recessing the sacrificial layer such that the sacrificial layer in the second region is removed and a portion of the sacrificial layer remains in the first region;

forming a second FM layer over the sacrificial plug in the first region and over the first FM layer in the second region;
performing a first recessing process such that the second FM layer is removed in the first region; and
performing a second recessing process on the second FM layer in the second region while the first FM layer is protected by the sacrificial plug in the first region.

2. The method of claim 1 , wherein the sacrificial layer is conformal.

3. The method of claim 1 , wherein after performing the second recessing process on the second FM layer in the second region, a top surface of the remaining second FM layer in the second region is at about the same level of a top surface of the first FM layer in the first region.

4. The method of claim 1 , further comprising removing the sacrificial plug after performing the second recessing process on the second FM layer in the second region.

5. The method of claim 1 , further comprising forming a plurality of features over the substrate in the first region, and wherein forming the first FM layer over the substrate includes forming the first FM layer between each feature from the plurality of features.

6. The method of claim 5 , wherein forming the first FM layer between each feature from the plurality of features includes:
forming the first FM layer over the plurality of features; and
recessing the first FM layer.

7. The method of claim 5 , wherein forming the sacrificial plug to cover the first FM layer in the first region includes forming the sacrificial plug over the first FM layer between each feature from the plurality of features.

8. The method of claim 1 , wherein a top surface of the recessed second FM layer in the second region is above a top surface of the first FM layer in the first region, after performing the second recessing process on the second FM layer in the second region.

9. The method of claim 1 , further comprising removing a portion of the sacrificial plug in the first region prior to forming the second FM layer over the sacrificial plug in the first region and over the first FM layer in the second region.

10. A method comprising:
providing a substrate having a plurality of features protruding from the substrate in a first region of the substrate;
forming a first flowable-material (FM) layer over the plurality of features in the first region and over the substrate in a second region of the substrate, wherein a top surface of the first FM layer in the first region is higher than a top surface of the first FM layer in the second region, wherein the forming the first FM layer over the plurality of features in the first region includes recessing the first FM layer to expose upper portions of the plurality of features;
forming a sacrificial plug over the first FM layer in the first region;
forming a second FM layer over the sacrificial plug in the first region and the first FM layer in the second region;
removing a first portion of the second FM layer from the first region; and
removing a second portion of the second FM layer in the second region while the first FM layer is protected by the sacrificial plug in the first region.

11. The method of claim 10 , wherein forming the sacrificial plug over the first FM layer in the first region includes:
forming a conformal sacrificial layer over the first FM layer; and
recessing the conformal sacrificial layer such that the conformal sacrificial layer in the second region is removed and a portion of the conformal sacrificial layer remains over the first FM layer in the first region.

12. The method of claim 10 , wherein a top surface of the second FM layer in the second region is above a top surface of the first FM layer in the first region after removing the second portion of the second FM layer in the second region while the first FM layer is protected by the sacrificial plug in the first region.

13. The method of claim 10 , wherein the plurality of features includes at least one semiconductor fin structure.

14. The method of claim 10 , further comprising removing the sacrificial plug after removing the second portion of the second FM layer in the second region while the first FM layer is protected by the sacrificial plug in the first region.

15. A method comprising:
providing a substrate having a first region and a second region, wherein the first region includes a plurality of protruding features;
forming a first flowable-material (FM) layer over the plurality of protruding features, wherein a top surface of the first FM layer in the first region is higher than a top surface of the first FM layer in the second region;
forming a sacrificial plug over the first FM layer in the first region, wherein the sacrificial plug is in direct contact with a portion of the plurality of protruding features;
forming a second FM layer over the sacrificial plug in the first region and over the first FM layer in the second region; and
recessing the second FM layer such that the second FM layer is removed from the first region and a top surface of the recessed second FM layer in the second region is above a top surface of the first FM layer in the first region.

16. The method of claim 15 , wherein forming the first FM layer over the plurality of protruding features includes recessing the first FM layer to expose upper portions of the plurality of protruding features.

17. The method of claim 16 , wherein recessing the first FM layer and recessing the second FM layer include an etching process, wherein the etching process is chosen such that the first and second FM layers are recessed without substantially recessing the plurality of protruding features.

18. The method of claim 15 , wherein forming the sacrificial plug over the first FM layer in the first region includes:
forming a conformal sacrificial layer over the first FM layer; and
recessing the conformal sacrificial layer such that the conformal sacrificial layer in the second region is removed and a portion of the conformal sacrificial layer remains over the first FM layer in the first region.

19. The method of claim 15 , further comprising recessing the recessed second FM layer in the second region while the first FM layer is protected by the sacrificial plug.

20. The method of claim 15 , further comprising removing the sacrificial plug.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yen Yung-Sung
• Liu Ru-Gun
• Lin Wei-Liang
• Chen Hsin-Chih

Classifications

• H10D84/0151

  Manufacturing their isolation regions · CPC title

• H10W10/0143

  comprising concurrently refilling multiple trenches having different shapes or dimensions · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10P95/064 Primary

  the removal being chemical etching · CPC title

• H10P14/34 Primary

  Deposited materials, e.g. layers · CPC title