Optical path control member and display device comprising same
US-2024411201-A1 · Dec 12, 2024 · US
US9798204B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9798204-B2 |
| Application number | US-201314082325-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 18, 2013 |
| Priority date | Sep 8, 2000 |
| Publication date | Oct 24, 2017 |
| Grant date | Oct 24, 2017 |
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Disclination of an active matrix liquid crystal display device is reduced. Portions of pixel electrodes are formed so as to mutually overlap with a convex portion. If the height of the convex portion is too tall, the amount of light leakage increases due to liquid crystals orienting diagonally with respect to a substrate surface. (See FIG. 1 C.) If the height of the convex portion is low, the disclination reduction effect is low. The optimal convex portion height is thus determined.
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What is claimed is: 1. A display device comprising: a semiconductor layer over a substrate; a gate wiring comprising a first conductive material over the substrate; a source wiring comprising a second conductive material over the substrate, the source wiring intersecting the gate wiring; a convex portion over the substrate, the convex portion having a first part extending in parallel with the gate wiring and second and third parts each extending in parallel with the source wiring; and a pixel electrode electrically connected to the semiconductor layer, a first edge of the pixel electrode overlapping with the second part of the convex portion and a second edge of the pixel electrode overlapping with the third part of the convex portion, wherein the convex portion includes a pattern comprising the first conductive material, wherein a first part of the semiconductor layer intersects the first part of the convex portion, and wherein the semiconductor layer is not overlapped with the second and third parts of the convex portion. 2. The display device according to claim 1 , wherein the pixel electrode is provided on an interlayer insulating film. 3. The display device according to claim 1 , further comprising a storage capacitor over the substrate, the storage capacitor comprising a first electrode comprising the semiconductor layer. 4. The display device according to claim 1 , wherein the convex portion comprises a film provided on an interlayer insulating film. 5. The display device according to claim 4 , wherein the film is selected from the group consisting of a photosensitive organic resin film, an organic resin film, a silicon oxide film, a silicon nitride film and a silicon oxynitride film. 6. The display device according to claim 1 , wherein a taper angle of the convex portion is less than 90°. 7. The display device according to claim 1 , wherein the display device is a reflective type liquid crystal display device. 8. The display device according to claim 1 , wherein the display device is a transmission type liquid crystal display device. 9. The display device according to claim 1 , wherein the display device is applied to an electronic equipment selected from the group consisting of a video camera, a digital camera, a projector, a head mounted display, a mobile computer, a portable telephone and an electronic notebook. 10. A display device comprising: a semiconductor layer over a substrate; a gate wiring comprising a first conductive material over the substrate; a source wiring comprising a second conductive material over the substrate, the source wiring intersecting the gate wiring; a convex portion over the substrate, the convex portion having a first part extending in parallel with the gate wiring and second and third parts each extending in parallel with the source wiring; and a pixel electrode electrically connected to the semiconductor layer, a first edge of the pixel electrode overlapping with the second part of the convex portion and a second edge of the pixel electrode overlapping with the third part of the convex portion, wherein the first part of the convex portion intersects the source wiring and a first part of the semiconductor layer, wherein the convex portion includes a pattern comprising the first conductive material, and wherein the semiconductor layer is not overlapped with the second and third parts of the convex portion. 11. The display device according to claim 10 wherein the pixel electrode is provided on an interlayer insulating film. 12. The display device according to claim 10 , further comprising a storage capacitor over the substrate, the storage capacitor comprising a first electrode comprising the semiconductor layer. 13. The display device according to claim 10 , wherein the convex portion comprises a film provided on an interlayer insulating film. 14. The display device according to claim 13 , wherein the film is selected from the group consisting of a photosensitive organic resin film, an organic resin film, a silicon oxide film, a silicon nitride film and a silicon oxynitride film. 15. The display device according to claim 10 , wherein a taper angle of the convex portion is less than 90°. 16. The display device according to claim 10 , wherein the display device is a reflective type liquid crystal display device. 17. The display device according to claim 10 , wherein the display device is a transmission type liquid crystal display device. 18. The display device according to claim 10 , wherein the display device is applied to an electronic equipment selected from the group consisting of a video camera, a digital camera, a projector, a head mounted display, a mobile computer, a portable telephone and an electronic notebook. 19. A display device comprising: a thin film transistor comprising a semiconductor layer over a substrate; a gate wiring comprising a first conductive material over the substrate; a source wiring comprising a second conductive material over the substrate, the source wiring intersecting the gate wiring; an interlayer insulating film over the thin film transistor; a convex portion over the substrate, the convex portion having a first part extending in parallel with the gate wiring and second and third parts each extending in parallel with the source wiring; and a pixel electrode electrically connected to the thin film transistor through a contact hole of the interlayer insulating film, a first edge of the pixel electrode overlapping with the second part of the convex portion and a second edge of the pixel electrode overlapping with the third part of the convex portion, wherein the convex portion includes a pattern comprising the first conductive material, wherein a first part of the semiconductor layer intersects the first part of the convex portion, and wherein the semiconductor layer is not overlapped with the second and third parts of the convex portion. 20. The display device according to claim 19 , wherein the pixel electrode is provided on the interlayer insulating film. 21. The display device according to claim 19 , further comprising a storage capacitor over the substrate, the storage capacitor comprising a first electrode comprising the semiconductor layer. 22. The display device according to claim 19 , wherein the convex portion comprises a film provided on the interlayer insulating film. 23. The display device according to claim 22 , wherein the film is selected from the group consisting of a photosensitive organic resin film, an organic resin film, a silicon oxide film, a silicon nitride film and a silicon oxynitride. 24. The display device according to claim 19 , wherein a taper angle of the convex portion is less than 90°. 25. The display device according to claim 19 , wherein the display device is a reflective type liquid crystal display device. 26. The display device according to claim 19 , wherein the display device is a transmission type liquid crystal display device. 27. The display device according to claim 19 , wherein the display device is applied to an electronic equipment selected from the group consisting of a video camera, a digital camera, a projector, a head mounted display, a mobile computer, a portable telephone and an electronic notebook. 28. The display device according to claim 1 , wherein each of the gate wiring, the source wiring, and the pa
Matrix · CPC title
Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes · CPC title
Constructional arrangements; {Manufacturing methods}(G02F1/135, G02F1/136 take precedence) · CPC title
Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element · CPC title
Physics · mapped topic
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