Porous boron nitride and method of preparing the same

US9796595B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9796595-B2
Application numberUS-201314417296-A
CountryUS
Kind codeB2
Filing dateJul 24, 2013
Priority dateJul 27, 2012
Publication dateOct 24, 2017
Grant dateOct 24, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

This disclosure relates to porous boron nitride and a method for preparing the same. The porous boron nitride of the present invention may be obtained by mixing a boron source with a nitrogen source, heating the mixture to form a compound, and then, extracting elements other than boron and nitrogen. The porous boron nitride of the present invention comprises both micropores and mesopoers, and it has a large specific surface area, and thus, may be usefully used in various fields.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for preparing porous boron nitride comprising the steps of: mixing TiB 2 with TiN; heating the mixture and reacting it with halogen gas; and heating the reaction mixture under hydrogen atmosphere. 2. The method according to claim 1 , further comprising the step of pulverizing the mixture, simultaneously with or after the step of mixing the boron source with the nitrogen source. 3. The method according to claim 2 , wherein the step of pulverizing the mixture is conducted using a high energy ball mill. 4. The method according to claim 1 , wherein the halogen gas is chlorine(Cl 2 ) gas. 5. The method according to claim 1 , wherein the step of reacting the mixture with halogen gas is conducted at a temperature of 300 to 1,200° C. for 5 minutes to 5 hours. 6. The method according to claim 1 , wherein the step of heating under hydrogen atmosphere is conducted at a temperature of 400 to 1,000° C.

Assignees

Inventors

Classifications

  • C01B35/14Primary

    Compounds containing boron and nitrogen, phosphorus, sulfur, selenium or tellurium · CPC title

  • Pore volume · CPC title

  • C01B35/146Primary

    Compounds containing boron and nitrogen, e.g. borazoles (ammonium tetrafluoborates C01B35/063; ammonium borates C01B35/12) · CPC title

  • Surface area · CPC title

  • Pore diameter · CPC title

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What does patent US9796595B2 cover?
This disclosure relates to porous boron nitride and a method for preparing the same. The porous boron nitride of the present invention may be obtained by mixing a boron source with a nitrogen source, heating the mixture to form a compound, and then, extracting elements other than boron and nitrogen. The porous boron nitride of the present invention comprises both micropores and mesopoers, and i…
Who is the assignee on this patent?
Hanwha Chemical Corp, Snu R&Db Foundation
What technology area does this patent fall under?
Primary CPC classification C01B35/14. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 24 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).