Semiconductor laser device

Patent metadata

Field	Value
Publication number	US-9793681-B2
Application number	US-201414903466-A
Country	US
Kind code	B2
Filing date	Jul 2, 2014
Priority date	Jul 16, 2013
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4 , a pair of cladding layers 2 and 7 sandwiching the active layer 4 , and a diffraction grating layer 6 which is optically connected to the active layer 4 . The spatial light modulator SLM includes a common electrode 25 , a plurality of pixel electrodes 21 , and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21 . A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.

First claim

The invention claimed is:

1. A semiconductor laser device comprising:
a semiconductor laser chip; and
a spatial light modulator which is optically connected to the semiconductor laser chip, wherein
the semiconductor laser chip includes:
an active layer,
a pair of cladding layers sandwiching the active layer,
a diffraction grating layer which is optically connected to the active layer, and
a laser beam generation region in which the active layer is formed;

wherein
the diffraction grating layer is sandwiched by the cladding layers;
the diffraction grating layer is a photonic crystal that has a periodic structure in which a refractive index is two-dimensionally varied;
the diffraction grating layer includes:
a basic layer and
a different-refractive-index region being embedded into the basic layer for a predetermined depth and has a refractive index different therefrom,
wherein the different-refractive-index region is arranged at a lattice position of a square lattice or of a triangle lattice;

the diffraction grating layer is placed in the laser beam generation region and emits the laser beam in the thickness direction of the diffraction grating layer;
the spatial light modulator is attached to the laser beam generation region; and
the spatial light modulator includes:
a common electrode,
a plurality of pixel electrodes, and
a liquid crystal layer arranged between the common electrode and the pixel electrodes,

the spatial light modulator being attached to the semiconductor laser chip in such a manner that a laser beam output in a thickness direction of the diffraction grating layer is input through a transparent one of the common electrode and the pixel electrodes,
modulating a phase of the laser beam with a driving voltage applied between the pixel electrodes and the common electrode, and
reflecting and outputting, to the outside, the laser beam the phase of which is modulated.

2. The semiconductor laser device according to claim 1 , further comprising a selection circuit which is arranged on the semiconductor laser chip and which is configured to supply the driving voltage selectively between a pixel electrode at an intended address and the common electrode.

3. The semiconductor laser device according to claim 1 , further comprising a storage device configured to store an initial correction value of the driving voltage in each of the pixel electrodes.

4. The semiconductor laser device according to claim 1 , further comprising a quarter wave plate arranged between the semiconductor laser chip and the spatial light modulator, and
a polarizer provided on a surface of the semiconductor laser chip which surface is on an opposite side of the spatial light modulator.

5. The semiconductor laser device according to claim 1 , wherein
a plurality of the different-refractive-index regions are periodically formed in the basic layer, and
a planar shape of each of the different-refractive-index regions in the diffraction grating layer in the deflection region is rotationally asymmetric.

6. A semiconductor laser device comprising:
a semiconductor laser chip; and
a spatial light modulator which is optically connected to the semiconductor laser chip,
wherein
the semiconductor laser chip includes:
an active layer,
a pair of cladding layers sandwiching the active layer,
a diffraction grating layer which is optically connected to the active layer, and
a laser beam generation region in which the active layer is formed;
a deflection region which is adjacent to the laser beam generation region and which is configured to deflect the laser beam,

wherein
the diffraction grating layer is sandwiched by the cladding layers;
the diffraction grating layer is a photonic crystal that has a periodic structure in which a refractive index is two-dimensionally varied;
the diffraction grating layer includes:
a basic layer and
a different-refractive-index region being embedded into the basic layer for a predetermined depth and has a refractive index different therefrom,
wherein the different-refractive-index region is arranged at a lattice position of a square lattice or of a triangle lattice;

the diffraction grating layer is extended in such a manner as to be placed in both of the laser beam generation region and the deflection region, and
the deflection region is surrounded by the laser beam generation region,
the spatial light modulator is attached to the deflection region; and
the spatial light modulator includes:
a common electrode,
a plurality of pixel electrodes, and
a liquid crystal layer arranged between the common electrode and the pixel electrodes,

the spatial light modulator being attached to the semiconductor laser chip in such a manner that a laser beam output in a thickness direction of the diffraction grating layer is input through transparent one of the common electrode and the pixel electrodes,
modulating a phase of the laser beam with a driving voltage applied between the pixel electrodes and the common electrode, and
reflecting and outputting, to the outside, the laser beam the phase of which is modulated.

7. The semiconductor laser device according to claim 6 , further comprising a selection circuit which is arranged on the semiconductor laser chip and which is configured to supply the driving voltage selectively between a pixel electrode at an intended address and the common electrode.

8. The semiconductor laser device according to claim 6 , further comprising a storage device configured to store an initial correction value of the driving voltage in each of the pixel electrodes.

9. The semiconductor laser device according to claim 6 , further comprising a quarter wave plate arranged between the semiconductor laser chip and the spatial light modulator, and
a polarizer provided on a surface of the semiconductor laser chip which surface is on an opposite side of the spatial light modulator.

10. The semiconductor laser device according to claim 6 , wherein
a plurality of the different-refractive-index regions are periodically formed in the basic layer, and
a planar shape of each of the different-refractive-index regions in the diffraction grating layer in the deflection region is rotationally asymmetric.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Takiguchi Yuu
• Nomoto Yoshiro

Classifications

• G02F2201/305

  diffraction grating · CPC title

• G02F1/29

  for the control of the position or the direction of light beams, i.e. deflection · CPC title

• G02F2202/32

  Photonic crystals · CPC title

• H01S5/34353

  based on (AI)GaAs · CPC title

• H01S5/026 Primary

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title