Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Patent metadata

Field	Value
Publication number	US-9793435-B2
Application number	US-201514953858-A
Country	US
Kind code	B2
Filing date	Nov 30, 2015
Priority date	May 10, 2004
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

First claim

What is claimed is:

1. A light emitting device configured as a laser device, comprising:
a semipolar III-nitride film including a light emitting device structure, wherein:
the light emitting device structure includes a diode structure including a semipolar III-nitride active layer, the diode structure having a current-voltage (I-V) characteristic,
material properties of the semipolar III-nitride active layer are such that the device emits light in response to a drive current density of 278 Amps per centimeter square,
the material properties are effective to achieve the I-V characteristic exhibiting a turn-on voltage of at most 3.1 Volts, and
the drive current density is direct current density; and

an edge configured on the light emitting device structure for emission of light.

2. The device of claim 1 , wherein the material properties are effective to obtain light emission having output power increasing linearly as the drive current density is increased from 33 Amps per centimeter square to 222 Amps per centimeter square.

3. The device of claim 1 , wherein the material properties are such that the device emits light having an output power of at least 1.5 milliwatts at the drive current density.

4. The device of claim 1 , wherein the semipolar III-nitride active layer emits light with a reduced decrease in the external quantum efficiency (EQE) with increasing drive current density, as compared to a polar III-nitride active layer operating in similar wavelength and drive current density ranges.

5. The device of claim 1 , wherein the semipolar III-nitride active layer has reduced polarization effects and effective hole masses, as compared to a polar III-nitride active layer operating in similar wavelength and drive current density ranges.

6. The device of claim 1 , wherein:
the semipolar III-nitride active layer is grown on or above a substrate, and
a top surface of the semipolar III-nitride active layer is planar, semipolar, and substantially parallel to a main surface of the substrate.

7. The device of claim 1 , wherein the semipolar III-nitride active layer is grown on or above a Gallium Nitride substrate.

8. The device of claim 1 , wherein the semipolar III-nitride active layer is grown on or above Gallium Nitride having a thickness of at least 10 micrometers.

9. The device of claim 8 , wherein the semipolar III-nitride active layer is grown on or above a top surface of the Gallium Nitride and the top surface has a {10 1 1}, {10 1 3}, or {11 2 2} orientation.

10. The device of claim 8 , wherein:
the semipolar III-nitride active layer is grown on or above a top surface of the Gallium Nitride, and
the top surface is oriented at a crystal angle θ from a c-plane of the Gallium Nitride and 58.4°≦θ<90°.

11. The device of claim 1 , wherein the device is a laser diode emitting blue light.

12. A light emitting device configured as a laser device, comprising:
a semipolar III-nitride film including a light emitting device structure, wherein:
the light emitting device structure includes a semipolar III-nitride active layer,
material properties of the semipolar III-nitride active layer are such that the device emits light in response to a drive current density of 278 Amps per centimeter square,
the material properties are effective to obtain the device that does not exhibit heating effects or saturation as the drive current density is increased from 33 Amps per centimeter square to 222 Amps per centimeter square, and
the drive current density is direct current density; and

an edge configured on the light emitting device structure for emission of light.

13. The device of claim 12 , wherein the semipolar III-nitride active layer is grown on or above a Gallium Nitride substrate.

14. The device of claim 12 , wherein the semipolar III-nitride active layer is grown on or above a top surface of Gallium Nitride having a thickness of at least 10 micrometers.

15. The device of claim 14 , wherein the top surface is oriented at a crystal angle θ from a c-plane of the Gallium Nitride and 58.4°≦θ<90°.

16. The device of claim 12 , wherein the device is a laser diode emitting blue light.

17. A light emitting device configured as a laser device, comprising:
a semipolar III-nitride film including a light emitting device structure, wherein:
the light emitting device structure includes a semipolar III-nitride active layer,
material properties of the semipolar III-nitride active layer are such that the device emits light in response to a drive current density of 278 Amps per centimeter square,
the semipolar III-nitride active layer emits the light with reduced blue-shift in a blue emission peak when increasing the drive current density between 33 Amps per centimeter square and 222 Amps per centimeter square, as compared to a polar III-nitride active layer operating in similar wavelength and drive current density ranges, and
the drive current density is direct current density; and

an edge configured on the light emitting device structure for emission of light.

18. The device of claim 17 , wherein the semipolar III-nitride active layer is grown on or above a Gallium Nitride substrate.

19. The device of claim 17 , wherein the semipolar III-nitride active layer is grown on or above a top surface of Gallium Nitride having a thickness of at least 10 micrometers.

20. The device of claim 19 , wherein the top surface is oriented at a crystal angle θ from a c-plane of the Gallium Nitride and 58.4°≦θ<90°.

Assignees

• Univ California
• Japan Science & Tech Agency

Inventors

• Farrell Jr Robert M
• Baker Troy J
• Chakraborty Arpan
• Haskell Benjamin A
• Pattison P Morgan
• Sharma Rajat
• Mishra Umesh K
• Denbaars Steven P
• Speck James S
• Nakamura Shuji

Classifications

• H10P14/2908

  Nitrides · CPC title

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/2926

  Crystal orientations · CPC title