Oxide semiconductor film

Patent metadata

Field	Value
Publication number	US-9793414-B2
Application number	US-201615012944-A
Country	US
Kind code	B2
Filing date	Feb 2, 2016
Priority date	Jun 19, 2013
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline In—Ga—Zn oxide, thereby separating a flat-plate-like In—Ga—Zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order; and the flat-plate-like In—Ga—Zn oxide is irregularly deposited over a substrate while the crystallinity is maintained.

First claim

The invention claimed is:

1. A display device comprising:
a gate electrode;
an oxide semiconductor film;
a gate insulating layer between the gate electrode and the oxide semiconductor film;
a source electrode and a drain electrode each electrically connected to the oxide semiconductor film;
an insulating layer over the source electrode and the drain electrode; and
an electrode over the insulating layer electrically connected to one of the source electrode and the drain electrode,
wherein the oxide semiconductor film comprises a plurality of plate particles,
wherein the plurality of plate particles are arranged irregularly, and
wherein the plurality of plate particles each have regularity in atomic arrangement.

2. The display device according to claim 1 , wherein a crystal boundary in the oxide semiconductor film is not observed by using a transmission electron microscope.

3. The display device according to claim 1 , wherein the plurality of plate particles each have a thickness of greater than or equal to 0.5 nm and less than or equal to 0.9 nm and an equivalent circle diameter of greater than or equal to 1 nm and less than or equal to 3 nm.

4. The display device according to claim 1 , wherein a plurality of circumferentially distributed spots are observed in a nanobeam electron diffraction pattern of the oxide semiconductor film.

5. The display device according to claim 4 , wherein a probe diameter of an electron beam is larger than or equal to 1 nm and smaller than or equal to 30 nm.

6. The display device according to claim 1 ,
wherein the plurality of plate particles each have a crystal part.

7. A display device comprising:
a gate electrode;
a gate insulating layer over the gate electrode;
an oxide semiconductor film over the gate insulating layer;
a source electrode and a drain electrode each electrically connected to the oxide semiconductor film;
an insulating layer over the source electrode and the drain electrode; and
an electrode over the insulating layer electrically connected to one of the source electrode and the drain electrode,
wherein the oxide semiconductor film comprises a plurality of plate particles each including indium, gallium, zinc, and oxygen,
wherein the plurality of plate particles are arranged irregularly, and
wherein the plurality of plate particles each have regularity in atomic arrangement.

8. The display device according to claim 7 , wherein a crystal boundary in the oxide semiconductor film is not observed by using a transmission electron microscope.

9. The display device according to claim 7 , wherein the plurality of plate particles each have a thickness of greater than or equal to 0.5 nm and less than or equal to 0.9 nm and an equivalent circle diameter of a plane of greater than or equal to 1 nm and less than or equal to 3 nm.

10. The display device according to claim 7 , wherein a plurality of circumferentially distributed spots are observed in a nanobeam electron diffraction pattern of the oxide semiconductor film.

11. The display device according to claim 10 , wherein a probe diameter of an electron beam is larger than or equal to 1 nm and smaller than or equal to 30 nm.

12. The display device according to claim 7 ,
wherein the plurality of plate particles each have a crystal part.

13. A display device comprising:
a transistor comprising:
a gate electrode,
an oxide semiconductor film,
a gate insulating layer between the gate electrode and the oxide semiconductor film, and
a source electrode and a drain electrode electrically connected to the oxide semiconductor film; and

a capacitor comprising:
a first electrode,
one of the source electrode and the drain electrode, and
a first insulating layer between the first electrode and the one of the source electrode and the drain electrode;

a second insulating layer over the transistor and the capacitor; and
an electrode over the second insulating layer electrically connected to the one of the source electrode and the drain electrode,
wherein the oxide semiconductor film comprises a plurality of plate particles,
wherein the plurality of plate particles are arranged irregularly, and
wherein the plurality of plate particles each have regularity in atomic arrangement.

14. The display device according to claim 13 , wherein a crystal boundary in the oxide semiconductor film is not observed by using a transmission electron microscope.

15. The display device according to claim 13 , wherein the plurality of plate particles each have a thickness of greater than or equal to 0.5 nm and less than or equal to 0.9 nm and an equivalent circle diameter of a plane of greater than or equal to 1 nm and less than or equal to 3 nm.

16. The display device according to claim 13 , wherein a plurality of circumferentially distributed spots are observed in a nanobeam electron diffraction pattern of the oxide semiconductor film.

17. The display device according to claim 16 , wherein a probe diameter of an electron beam is larger than or equal to 1 nm and smaller than or equal to 30 nm.

18. The display device according to claim 13 ,
wherein the plurality of plate particles each have a crystal part.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P14/3461

  Nanoparticles · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3451

  Structure · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title