Silicon carbide semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-9793376-B2
Application number	US-201314415752-A
Country	US
Kind code	B2
Filing date	Aug 6, 2013
Priority date	Aug 7, 2012
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench.

First claim

The invention claimed is:

1. A method of manufacturing a silicon carbide semiconductor device having an inversion type vertical switching element with a trench gate structure, the silicon carbide semiconductor device including:
a substrate of a first or second conductivity type which is made of silicon carbide, a main surface of which is a (0001) plane or a (000-1) plane, or has an off angle with respect to the (0001) plane or the 000-1) plane;
a drift layer formed on the substrate, and made of silicon carbide of the first conductivity type which is lower in impurity concentration than the substrate;
a base region formed on the drift layer, and made of silicon carbide of the second conductivity type;
a source region formed on an upper portion of the base region, and made of silicon carbide of the first conductivity type which is higher in concentration than the drift layer;
a trench that is formed from a surface of the source region to a depth reaching the drift layer through the base region, and a side wall surface of which is formed toward a (11-20) plane or a (1-100) plane;
a gate insulating film formed on an inner wall surface of the trench;
a gate electrode formed on the gate insulating film within the trench;
a source electrode electrically connected to the source region and the base region; and
a drain electrode formed on a rear surface side of the substrate,
wherein an applied voyage to the gate electrode is controlled to form a channel region of the inversion type on a surface portion of the base region located on a side surface of the trench, and a current is allowed to flow between the source electrode and the drain electrode through the source region and the drift layer,
the method of manufacturing the silicon carbide semiconductor device comprising:
(a) forming the trench by etching;
(b) performing sacrificial oxidation by forming a sacrificial oxide film and removing the sacrificial oxide film after forming the trench and prior to and without any step removing damage formed in the step (a);
(c) performing a damage removing step to remove damage formed during the step (a) of forming the trench by etching, the damage removing step including chemical dry etching using a gas containing CF4 and O 2 to remove the damage resulting from the step (a); and
(d) forming the gate insulating film on the surface of the trench without performing sacrificial oxidation after removing the damage,
wherein the steps (a), (b), (c) and (d) are carried out in sequence without any intervening processing steps.

2. A method of manufacturing a silicon carbide semiconductor device having an inversion type vertical switching element with a trench gate structure according to claim 1 ,
wherein at least the side wall surface of the trench on which a channel region is formed having an angle of 84 degrees or larger with respect to the (0001) plane or the (000-1) plane.

3. A method of manufacturing a silicon carbide semiconductor device having an inversion type vertical switching element with a trench gate structure according to claim 1 ,
wherein the trench has a step at a boundary position between the source region and the base region in the side wall surface being 10 nm or smaller.

4. The method of manufacturing a silicon carbide semiconductor device having an inversion type vertical switching element according to claim 3 ,
wherein the trench includes a portion in which the angle with respect to the (0001) plane or the (000-1) plane is smaller than 84 degrees as at least a part of the side wall surface.

5. The method of manufacturing a silicon carbide semiconductor device having an inversion type vertical switching element according to claim 2 ,
wherein the substrate is a substrate having the off angle, and wherein the trench is formed with one direction as a longitudinal direction, and the longitudinal direction matches an off-axis direction of the substrate.

Assignees

• Denso Corp
• Morimoto Jun
• Toyota Motor Co Ltd

Inventors

• Miyahara Shinichiro
• Yamamoto Toshimasa
• Morimoto Jun
• Soejima Narumasa
• Watanabe Yukihiko

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10D64/01366

  the semiconductor being silicon carbide · CPC title

• H10D64/01332

  Making the insulator · CPC title

• H10D30/0297 Primary

  using recessing of the gate electrodes, e.g. to form trench gate electrodes · CPC title

• H10D12/038

  having a recessed gate, e.g. trench-gate IGBTs · CPC title