Preparing a semiconductor surface for epitaxial deposition

Patent metadata

Field	Value
Publication number	US-9793104-B2
Application number	US-201615008663-A
Country	US
Kind code	B2
Filing date	Jan 28, 2016
Priority date	Jan 29, 2015
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

Provided is a method of epitaxial deposition, which involves dry-etching a semiconductor substrate with a fluorine containing species and exposing the dry-etched substrate to hydrogen atoms, prior to epitaxially depositing a semiconductor layer to the surface of the substrate.

First claim

What is claimed is:

1. A method of epitaxial deposition comprising
a) obtaining a semiconductor substrate having i) a bulk semiconductor and ii) a surface oxide layer over the bulk semiconductor;
b) dry-etching the substrate with a fluorine containing species to remove the surface oxide layer and thereby expose a surface of the bulk semiconductor;
c) exposing the surface of the bulk semiconductor to hydrogen atoms; and
d) then epitaxially depositing a semiconductor layer on the surface of the bulk semiconductor.

2. The method of claim 1 , wherein the semiconductor substrate is a silicon substrate.

3. The method of claim 1 , wherein the epitaxially deposited semiconductor layer is a Group III-V semiconductor layer.

4. The method of claim 1 , wherein after said exposing and before said depositing the surface of the bulk semiconductor is not exposed to water vapor, oxygen or adventitious carbon.

5. The method of claim 1 , wherein said dry etching comprises decomposing NF 3 to produce said fluorine containing species using plasma.

6. The method of claim 5 wherein said dry-etching is performed at a temperature of the substrate being from 130 to 650° C.

7. The method of claim 5 , wherein no direct plasma is in direct contact with the substrate during the dry-etching.

8. The method of claim 1 , wherein said exposing comprises decomposing H 2 by a plasma to produce said hydrogen atoms.

9. The method of claim 8 , wherein no direct plasma is in direct contact with the substrate during the exposing of the substrate to the hydrogen atoms.

10. The method of claim 1 , wherein said exposing is performed at a first elevated temperature and said epitaxially depositing is performed at a second elevated temperature and wherein the method comprises cooling the substrate from the first elevated temperature after said exposing and then heating the substrate to the second elevated temperature.

11. The method of claim 1 , wherein during said dry-etching, exposing and epitaxially depositing a temperature of the substrate is at least 200° C.

12. The method of claim 1 performed in an apparatus comprising i) a cleaning module; ii) a epitaxial deposition module; and iii) a transfer module in direct contact with the cleaning module and the epitaxial deposition module; wherein said dry-etching and said exposing are performed in the cleaning module and said epitaxially depositing is performed in the epitaxial deposition module, wherein the method further comprises removing the substrate from the cleaning module to the transfer module after said exposing and then transferring the substrate from the transfer module to the epitaxial deposition module.

13. The method of claim 12 , wherein the cleaning module comprises a heater and each of the dry etching and the exposing comprises heating the substrate by the heater.

14. The method of claim 12 , wherein the cleaning module comprises a plasma chamber and wherein said dry-etching comprises generating plasma in the plasma chamber to produce the fluorine containing species, while said exposing comprises generating plasma in the plasma chamber to produce said hydrogen atoms.

15. The method of claim 14 , wherein the plasma chamber is such that the plasma is generated in a uniform region, which is not in direct contact with the substrate.

16. The method of claim 15 , wherein the plasma chamber is a parallel plate cavity comprising i) a showerhead electrode configured to introduce a gaseous species, said showerhead electrode is positioned above the substrate parallel to a surface of the substrate; and ii) a grounded shield plate, which is penetrable by said fluorine containing species and said hydrogen atoms, the ground plate being positioned parallel to the surface of the substrate between the showerhead electrode and the substrate; wherein the uniform region, in which the plasma is generated, is between the showerhead electrode and the grounded shield electrode and wherein no direct plasma is present between the grounded shield electrode and the substrate.

17. The method of claim 16 , wherein said dry etching comprises introducing NF 3 through the showerhead electrode into a space between the showerhead electrode and the grounded shield plate; and generating plasma between the showerhead electrode and the grounded shield plate to produce the fluorine containing species by decomposing NF 3 .

18. The method of claim 16 , wherein said exposing comprises introducing H 2 through the showerhead electrode into a space between the showerhead electrode and the grounded shield plate; and generating plasma between the showerhead electrode and the grounded shield plate to produce the hydrogen atoms by decomposing H 2 .

19. The method of claim 14 , wherein the plasma chamber is a parallel plate cavity comprising i) a showerhead electrode configured to introduce a gaseous species, said showerhead electrode is positioned above the substrate parallel to a surface of the substrate; and ii) a substrate holder configured to hold the substrate, the substrate holder comprising a heater, which comprises a grounded mesh and an electrically insulating surface above the grounded mesh, wherein plasma is generated in the plasma chamber between the grounded mesh and the showerhead electrode.

20. The method of claim 1 , further exposing the substrate to hydrogen atoms prior to said dry etching.

Assignees

• Aixtron Se

Inventors

• Kelman Maxim
• Khandan Shahab
• Dunham Scott
• Huynh Tac van
• Teo Kenneth B K

Classifications

• H10P72/0432

  mainly by conduction · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/2901

  Materials · CPC title

• H10P14/36

  characterised by treatments done before the formation of the materials · CPC title

• H10P72/0468 Primary

  comprising a chamber adapted to a particular process · CPC title