Magnetic material sputtering target and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9793099-B2
Application number	US-201314358285-A
Country	US
Kind code	B2
Filing date	Feb 26, 2013
Priority date	Mar 15, 2012
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object of the present invention is to provide a magnetic material target, in particular a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.

First claim

The invention claimed is:

1. A ferromagnetic sintered alloy sputtering target having a sintered structure containing a dispersion of grains of nonmagnetic oxides, wherein the grains of nonmagnetic oxides have an average diameter of 400 nm or less and a shape characterized in an aspect ratio of 2 or less.

2. The ferromagnetic sintered alloy sputtering target according to claim 1 , wherein the target has a composition consisting of Cr in an amount of more than 0 mol % and 45 mol % or less and a balance of Co.

3. The ferromagnetic sintered alloy sputtering target according to claim 1 , wherein the target has a composition consisting of Cr in an amount of more than 0 mol % and 45 mol % or less, Pt in an amount of 1 mol % or more and 30 mol % or less, and a balance of Co.

4. The ferromagnetic sintered alloy sputtering target according to claim 1 , wherein the target has a composition consisting of Pt in an amount of 1 mol % or more and 30 mol % or less and a balance of Co.

5. The ferromagnetic sintered alloy sputtering target according to claim 1 , wherein the target has a composition consisting of Pt in an amount of 5 mol % or more and 60 mol % or less and a balance of Fe.

6. The ferromagnetic sintered alloy sputtering target according to claim 1 , wherein the target contains as an additive element one or more elements selected from the group consisting of B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, W, Ag, Au, Cu and C in a total amount of 0.5 mol % or more and 20 mol % or less.

7. The ferromagnetic sintered alloy sputtering target according to 1 , wherein the nonmagnetic oxides are oxides of one or more elements selected from the group consisting of B, Si, Cr, Ti, Ta, W, Al, Mg, Mn, Ca, Zr, and Y in a total amount of 1 to 20 mol %.

8. The ferromagnetic sintered alloy sputtering target according to claim 1 , wherein the target contains as an additive material one or more inorganic substances selected from carbon, nitride and carbide.

9. The ferromagnetic sintered alloy sputtering target according to claim 1 , produced by a process comprising the steps of depositing an oxide-containing magnetic material on a substrate using a magnetic material and an oxide material by PVD or CVD, removing the substrate from the deposited oxide-containing magnetic material, pulverizing the oxide-containing magnetic material to obtain a raw material for the target, and further sintering the raw material.

10. The ferromagnetic sintered alloy sputtering target according to claim 1 , produced by a process comprising the steps of depositing an oxide-containing magnetic material on a substrate using a magnetic material and an oxide material by PVD or CVD, removing the substrate from the deposited oxide-containing magnetic material, pulverizing the oxide-containing magnetic material to obtain a raw material for the target, further mixing the raw material with added insufficient components, and sintering the mixture.

11. The ferromagnetic sintered alloy sputtering target according to claim 1 , produced by a process comprising the steps of depositing an oxide-containing magnetic material on a substrate using a magnetic material and an oxide material by PVD or CVD, removing the substrate from the deposited oxide-containing magnetic material, and further performing hot isotactic pressing (HIP) on the resulting oxide-containing magnetic material.

12. The ferromagnetic sintered alloy sputtering target according to claim 1 , produced by a process comprising the steps of depositing an oxide-containing magnetic material on a substrate using a magnetic material and an oxide material by PVD or CVD, removing the substrate from the deposited oxide-containing magnetic material, and further sintering the oxide-containing magnetic material to obtain a target.

13. A ferromagnetic sintered alloy sputtering target having a sintered structure containing a dispersion of grains of nonmagnetic oxides, wherein the sintered structure is a mixed structure comprising an alloy Phase A containing grains of nonmagnetic oxides which have an average diameter of 400 nm or less and a shape characterized in an aspect ratio of 2 or less, and an alloy Phase B surrounding the alloy Phase A and containing grains of nonmagnetic oxides which have an average diameter of 2μm or less.

14. The ferromagnetic sintered alloy sputtering target according to claim 13 , wherein the average diameter of the grains of the nonmagnetic oxides contained in the alloy Phase B is larger than the average diameter of the grains of the nonmagnetic oxides contained in the alloy Phase A.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Ogino Shin-Ichi
• Nakamura Yuichiro

Classifications

• C04B35/6455

  Hot isostatic pressing · CPC title

• C22C19/07

  based on cobalt · CPC title

• C22C32/0026

  Matrix based on Ni, Co, Cr or alloys thereof · CPC title

• C22C1/10

  Alloys containing non-metals (C22C1/05, C22C1/08 take precedence) · CPC title

• H01J37/3426 Primary

  Material · CPC title