Techniques and apparatus for manipulating an ion beam

Patent metadata

Field	Value
Publication number	US-9793087-B2
Application number	US-201514849813-A
Country	US
Kind code	B2
Filing date	Sep 10, 2015
Priority date	Sep 10, 2015
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

A method may include: generating an ion beam from an ion source, the ion beam having an initial direction of propagation; deflecting the ion beam at an initial angle of inclination with respect to the initial direction of propagation; passing the ion beam through an aperture in a magnetic assembly; and generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.

First claim

What is claimed is:

1. A method, comprising:
generating an ion beam from an ion source, the ion beam having an initial direction of propagation;
deflecting the ion beam at an initial average angle of inclination with respect to the initial direction of propagation;
passing the ion beam through a magnetic assembly, the magnetic assembly including an aperture; and
generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.

2. The method of claim 1 , wherein the generating the quadrupole field comprises:
providing a first current through a first coil disposed on a first side of the aperture, the first coil having a first coil axis extending along the second direction; and
providing a second current through a second coil disposed on a second side of the aperture, the second coil having a second coil axis extending along the second direction.

3. The method of claim 2 , wherein the generating the dipole field comprises providing the first current to the first coil at a first magnitude and providing the second current at a second magnitude simultaneously to the providing the first current, the second magnitude being different from the first magnitude.

4. The method of claim 2 , wherein the magnetic assembly comprises a magnetic yoke, wherein the first coil and the second coil are disposed around the magnetic yoke.

5. The method of claim 2 , further comprising providing a bucking current through a first bucking coil disposed on a third side of the aperture, the first bucking coil having a first bucking coil axis extending along the first direction, and providing the bucking current through a second bucking coil disposed on a fourth side of the aperture opposite the third side, the second bucking coil having a second bucking coil axis extending along the first direction.

6. The method of claim 2 , wherein a dipole field magnitude of the dipole field varies by less than 50% as a function of position along the second direction between a first position adjacent a first end region of the first coil and second coil, and a second position adjacent a second end region of the first coil and second coil.

7. The method of claim 6 , wherein a quadrupole field magnitude of the quadrupole field varies monotonically between a positive value and a negative value along the second direction as a function of position between the first position and the second position.

8. The method of claim 1 , wherein the initial angle of inclination is between 1 degree and 4 degrees with respect to the initial direction of propagation.

9. The method of claim 1 , wherein the deflecting the ion beam comprises providing an initial divergence of 5 degrees or less along the first direction with respect to the initial direction of propagation before the passing the ion beam through the aperture.

10. The method of claim 1 , wherein the generating the quadrupole field and the dipole field comprises generating a reduced divergence of less than 2 degrees along the first direction with respect to the initial direction of propagation after the ion beam through the aperture.

11. The method of claim 1 , the ion beam having an elongated cross-section having a long axis along the second direction and a short axis along the first direction.

12. An apparatus to manipulate an ion beam, comprising:
a deflector to receive an ion beam having an initial direction of propagation and to deflect the ion beam along an initial average angle of inclination with respect to the initial direction of propagation;
a magnetic assembly disposed downstream to the deflector, the magnetic assembly including an aperture to receive the ion beam and further comprising:

a magnetic yoke; and
a coil assembly, the coil assembly comprising a first coil disposed along a first side of the magnetic yoke, and a second coil disposed along a second side of the magnetic yoke opposite the first side;
a first current supply coupled to the first coil and a second current supply coupled to the second coil; and
an ion beam controller electrically coupled to the deflector and to the first current supply and the second current supply, the ion beam controller directing a first control signal to the first current supply and second control signal to the second current supply, wherein the first coil and second coil simultaneously generate a magnetic dipole field and a magnetic quadrupole field within the aperture.

13. The apparatus of claim 12 , wherein first current supply includes a first component to generate a first current in the first coil responsive to the first control signal and the second current supply includes a second component to generate a second current in the second coil responsive to the second control signal, the second current being different from the first current.

14. The apparatus of claim 12 , the magnetic quadrupole field extending along a first direction, the first coil having a first coil axis extending along a second direction perpendicular to the first direction, and the second coil having a second coil axis extending along the second direction.

15. The apparatus of claim 12 , wherein the magnetic assembly comprises a magnetic yoke, wherein the first coil and the second coil are disposed around the magnetic yoke.

16. The apparatus of claim 14 , further comprising a first bucking coil disposed on a third side of the aperture, the first bucking coil having a first bucking coil axis extending along the first direction, and a second bucking coil disposed on a fourth side of the aperture opposite the third side, the second bucking coil having a second bucking coil axis extending along the first direction.

17. The apparatus of claim 14 , wherein a magnitude of the magnetic dipole field varies by less than 50% as a function of position along the second direction between a first position adjacent a first end region of the first coil and second coil, and a second position adjacent a second end region of the first coil and second coil.

18. The apparatus of claim 17 , wherein a magnitude of the magnetic quadrupole field varies monotonically between a positive value and a negative value along the second direction as a function of position between the first position and the second position.

19. An ion implanter, comprising:
an ion source having an elongated aperture to generate a ribbon beam having an elongated cross-section and further having an initial direction of propagation;
a deflector to receive the ribbon beam and to deflect the ribbon beam along an initial average angle of inclination with respect to the initial direction of propagation;
a magnetic assembly disposed downstream to the deflector, the magnetic assembly including an aperture to receive the ribbon beam and further comprising:
a magnetic yoke; and
a coil assembly, the coil assembly comprising a first coil disposed along a first side of the magnetic yoke, and a second coil disposed along a second side of the magnetic yoke opposite the first side;
a first current supply coupled to the first coil and a second current supply coupled to the second coil; and

an ion beam controller electrically coupled to the deflector and to the first current supply and the second current supply, the ion beam controller directing a first control signal to the first current supply and second control signal to the second current supply, where

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Buff James S
• Benveniste Victor
• Sinclair Frank

Classifications

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J37/1475 Primary

  magnetic · CPC title

• H01J2237/31701

  Ion implantation · CPC title

• H01J37/14 Primary

  magnetic · CPC title

• H01J2237/1415

  Bores or yokes, i.e. magnetic circuit in general · CPC title