Energy storage device, method of manufacturing same, and mobile electronic device containing same

Patent metadata

Field	Value
Publication number	US-9793061-B2
Application number	US-201615239285-A
Country	US
Kind code	B2
Filing date	Aug 17, 2016
Priority date	Apr 25, 2012
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

An energy storage device comprises a first porous semiconducting structure ( 510 ) comprising a first plurality of channels ( 511 ) that contain a first electrolyte ( 514 ) and a second porous semiconducting structure ( 520 ) comprising a second plurality of channels ( 521 ) that contain a second electrolyte ( 524 ). In one embodiment, the energy storage device further comprises a film ( 535 ) on at least one of the first and second porous semiconducting structures, the film comprising a material capable of exhibiting reversible electron transfer reactions. In another embodiment, at least one of the first and second electrolytes contains a plurality of metal ions. In another embodiment, the first and second electrolytes, taken together, comprise a redox system.

First claim

What is claimed is:

1. An apparatus comprising:
a first electrode comprising a silicon material and having a first plurality of finger portions; and
a second electrode comprising the silicon material and having a second plurality of finger portions,
wherein the first plurality of finger portions and the second plurality of finger portions are interdigitated and are separated by a trench;
wherein the first electrode has a first sidewall facing the second electrode, the first sidewall including a first sidewall portion having a first plurality of pores and a conductive coating; and
wherein the second electrode has a second sidewall facing the first electrode, the second sidewall including a second sidewall portion having a second plurality of pores and a conductive coating.

2. The apparatus of claim 1 ,
wherein the conductive coating of the first sidewall portion comprises one of: titanium nitride, titanium carbide, titanium silicide, and titanium borosilicide.

3. The apparatus of claim 1 ,
wherein the conductive coating of the first sidewall portion comprises a nitride of one of: titanium, vanadium, niobium, tantalum, molybdenum, tungsten, chromium, vanadium-titanium, or titanium-aluminum.

4. The apparatus of claim 1 ,
wherein the conductive coating of the first sidewall portion coats interior surfaces of the first plurality of pores.

5. The apparatus of claim 1 ,
wherein the first plurality of pores and the second plurality of pores contain an electrolyte.

6. The apparatus of claim 1 ,
wherein the conductive coating of the first sidewall portion is a thin film formed by atomic layer deposition.

7. The apparatus of claim 1 ,
wherein the first plurality of pores and the second plurality of pores are formed by an etch of the first sidewall surface and the second sidewall surface.

8. The apparatus of claim 1 ,
wherein the first electrode includes a first portion of non-porous silicon and the second electrode includes a second portion of non-porous silicon.

9. The apparatus of claim 1 , comprising:
a support structure to maintain a physical separation between the first electrode and the second electrode.

10. The apparatus of claim 1 ,
wherein the first electrode and the second electrode are implemented in a single integrated circuit.

11. The apparatus of claim 1 ,
wherein the silicon material comprises at least one of: phosphorous, arsenic, and boron.

12. A mobile electronic device comprising a housing, an integrated circuit die within the housing, and an energy storage device within the housing and associated with the integrated circuit die so as to be capable of providing energy to the integrated circuit die, wherein the energy storage device comprises:
a first electrode comprising a silicon material and having a first plurality of finger portions; and
a second electrode comprising the silicon material and having a second plurality of finger portions,
wherein the first plurality of finger portions and the second plurality of finger portions are interdigitated and are separated by a trench;
wherein the first electrode has a first sidewall facing the second electrode, the first sidewall including a first sidewall portion having a first plurality of pores and a conductive coating; and
wherein the second electrode has a second sidewall facing the first electrode, the second sidewall including a second sidewall portion having a second plurality of pores and a conductive coating.

13. The mobile electronic device of claim 12 ,
wherein the conductive coating of the first sidewall portion comprises titanium nitride (TiN); and
wherein the silicon material comprises at least one of: phosphorous, arsenic, and boron.

14. The mobile electronic device of claim 12 ,
wherein the conductive coating of the first sidewall portion coats interior surfaces of the first plurality of pores; and
wherein the first plurality of pores and the second plurality of pores contain an electrolyte.

15. The mobile electronic device of claim 12 ,
wherein the first plurality of pores and the second plurality of pores contain an electrolyte.

16. The mobile electronic device of claim 12 ,
wherein the conductive coating of the first sidewall portion is a thin film formed by atomic layer deposition; and
wherein the first plurality of pores and the second plurality of pores are formed by an etch of the first sidewall surface and the second sidewall surface.

17. A method of manufacturing an energy storage device, the method comprising:
providing a first silicon structure having a first plurality of finger portions and a second silicon structure having a second plurality of finger portions, the first plurality of finger portions and the second plurality of finger portions having an interdigitated configuration;
spacing the first silicon structure from the second silicon structure by a trench positioned between the first plurality of finger portions and the second plurality of finger portions;
etching a side surface of the first silicon structure that faces the second silicon structure to create a plurality of pores;
etching a side surface of the second silicon structure that faces the first silicon structure to create a plurality of pores; and
coating the side surfaces and the pluralities of pores of the first silicon structure and the second silicon structure with Titanium Nitride (TiN).

18. The method of claim 17 , comprising:
providing the pluralities of pores of the first silicon structure and the second silicon structure with an electrolyte comprising at least one of: a solid substance, and a gel-like material.

19. The method of claim 17 ,
wherein the side surfaces and the pluralities of pores are coated with TiN by atomic layer deposition.

20. The method of claim 17 , comprising:
providing the energy storage device with a support structure to maintain a physical separation between the first silicon structure and the second silicon structure; and
integrating the first silicon structure and the second silicon structure into an integrated circuit die.

Assignees

• Intel Corp

Inventors

• Gardner Donald S
• Pint Cary L
• Clendenning Scott B

Classifications

• H01G11/30

  characterised by their material · CPC title

• H01G11/24

  characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor · CPC title

• H01G11/84

  Processes for the manufacture of hybrid or EDL capacitors, or components thereof · CPC title

• H01G11/46

  Metal oxides · CPC title

• H01G11/36

  Nanostructures, e.g. nanofibres, nanotubes or fullerenes · CPC title