Light-emitting element, display device and electronic apparatus

US9792860B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9792860-B2
Application numberUS-201314074320-A
CountryUS
Kind codeB2
Filing dateNov 7, 2013
Priority dateNov 14, 2012
Publication dateOct 17, 2017
Grant dateOct 17, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A light-emitting element includes a light-emitting section and a driving circuit that drives the light-emitting section. The driving circuit includes at least (A) a drive transistor that is a p-channel field effect transistor, (B) an image-signal writing transistor that is a p-channel field effect transistor, (C) a light-emission control transistor that is a p-channel field effect transistor, and (D) a capacitor. Each of the drive transistor, image-signal writing transistor, and light-emission control transistor is provided in an n-type well formed in a p-type silicon semiconductor substrate. A first source/drain region of the drive transistor is electrically connected to the n-type well in which the drive transistor is formed.

First claim

Opening claim text (preview).

What is claimed is: 1. A light-emitting element, comprising: a light-emitting section; and a driving circuit configured to drive the light-emitting section, wherein the driving circuit includes: a drive transistor that is a first p-channel field effect transistor, an image-signal writing transistor that is a second p-channel field effect transistor, a first light-emission control transistor that is a third p-channel field effect transistor, a first capacitor that includes a first electrode and a second electrode, and a second light-emission control transistor that is a fourth p-channel field effect transistor, wherein each of the drive transistor, the image-signal writing transistor, and the first light-emission control transistor is in an n-type well that is in a p-type silicon semiconductor substrate, wherein one of a first source region of the drive transistor or a first drain region of the drive transistor is electrically connected to the n-type well, which has the drive transistor, through the first electrode of the first capacitor, and wherein the second light-emission control transistor includes a gate electrode connected to a first light-emission control line. 2. The light-emitting element according to claim 1 , wherein the drive transistor includes: one of the first source region of the drive transistor or the first drain region of the drive transistor connected to one of a first source region of the first light-emission control transistor or a first drain region of the first light-emission control transistor, one of a second source region or a second drain region connected to the light-emitting section, and a gate electrode connected to one of a first source region of the image-signal writing transistor or a first drain region of the image-signal writing transistor, and connected to the second electrode of the first capacitor, the image-signal writing transistor includes: one of a second source region or a second drain region connected to a data line, and a gate electrode connected to a scanning line, the first light-emission control transistor includes: one of a second source region or a second drain region connected to a first current supply line, and a gate electrode connected to a second light-emission control line, and the first electrode of the first capacitor is connected to a second current supply line. 3. The light-emitting element according to claim 2 , further comprising a second capacitor, wherein the first electrode of the first capacitor is connected to the second current supply line through the second capacitor, wherein the first electrode of the first capacitor is further connected to one of the first source region of the drive transistor or the first drain region of the drive transistor, and wherein the first electrode of the first capacitor is further connected to one of the second source region of the first light-emission control transistor or the second drain region of the first light-emission control transistor. 4. The light-emitting element according to claim 1 , wherein the second light-emission control transistor includes one of a first source region or first drain region connected to one of a second source region of the drive transistor or a second drain region of the drive transistor. 5. A display device, comprising: a plurality of light-emitting elements, wherein the plurality of light-emitting elements are present in a two-dimensional matrix, and wherein a light-emitting element of the plurality of light-emitting elements comprises: a light-emitting section; and a driving circuit configured to drive the light-emitting section, wherein the driving circuit includes: a drive transistor that is a first p-channel field effect transistor, an image-signal writing transistor that is a second p-channel field effect transistor, a first light-emission control transistor that is a third p-channel field effect transistor, a first capacitor that includes a first electrode and a second electrode, and a second light-emission control transistor that is a fourth p-channel field effect transistor, wherein each of the drive transistor, the image-signal writing transistor, and the first light-emission control transistor is in an n-type well that is in a p-type silicon semiconductor substrate, wherein one of a first source region of the drive transistor or a first drain region of the drive transistor is electrically connected to the n-type well, which has the drive transistor, through the first electrode of the first capacitor, and wherein the second light-emission control transistor includes a gate electrode connected to a light-emission control line. 6. An electronic apparatus, comprising a display device, wherein the display device comprises: a plurality of light-emitting elements, wherein the plurality of light-emitting elements are present in a two-dimensional matrix, and wherein a light-emitting element of the plurality of light-emitting elements comprises: a light-emitting section; and a driving circuit configured to drive the light-emitting section, wherein the driving circuit includes: a drive transistor that is a first p-channel field effect transistor, an image-signal writing transistor that is a second p-channel field effect transistor, a first light-emission control transistor that is a third p-channel field effect transistor, a first capacitor that includes a first electrode and a second electrode, and a second light-emission control transistor that is a fourth p-channel field effect transistor, wherein each of the drive transistor, the image-signal writing transistor, and the first light-emission control transistor is in an n-type well that is in a p-type silicon semiconductor substrate, wherein one of a first source region of the drive transistor or a first drain region of the drive transistor is electrically connected to the n-type well, which has the drive transistor, through the first electrode of the first capacitor, and wherein the second light-emission control transistor includes a gate electrode connected to a light-emission control line.

Assignees

Inventors

Classifications

  • with pixel circuitry controlling the current through the light-emitting element · CPC title

  • Compensation of drifts in the characteristics of light emitting or modulating elements · CPC title

  • Electricity · mapped topic

  • G09G3/3291Primary

    in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements · CPC title

  • the pixel elements being TFTs · CPC title

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Frequently asked questions

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What does patent US9792860B2 cover?
A light-emitting element includes a light-emitting section and a driving circuit that drives the light-emitting section. The driving circuit includes at least (A) a drive transistor that is a p-channel field effect transistor, (B) an image-signal writing transistor that is a p-channel field effect transistor, (C) a light-emission control transistor that is a p-channel field effect transistor, a…
Who is the assignee on this patent?
Sony Corp
What technology area does this patent fall under?
Primary CPC classification G09G3/3291. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 17 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).