Low-loss tunable radio frequency filter

Patent metadata

Field	Value
Publication number	US-9787283-B2
Application number	US-201615367039-A
Country	US
Kind code	B2
Filing date	Dec 1, 2016
Priority date	Nov 17, 2006
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A method of constructing an RF filter comprises designing an RF filter that includes a plurality of resonant elements disposed, a plurality of non-resonant elements coupling the resonant elements together to form a stop band having a plurality of transmission zeroes corresponding to respective frequencies of the resonant elements, and a sub-band between the transmission zeroes. The non-resonant elements comprise a variable non-resonant element for selectively introducing a reflection zero within the stop band to create a pass band in the sub-band. The method further comprises changing the order in which the resonant elements are disposed along the signal transmission path to create a plurality of filter solutions, computing a performance parameter for each of the filter solutions, comparing the performance parameters to each other, selecting one of the filter solutions based on the comparison of the computed performance parameters, and constructing the RF filter using the selected filter solution.

First claim

What is claimed is:

1. A radio frequency (RF) front-end of a telecommunications system, comprising:
a signal transmission path having an input and an output;
a plurality of resonant elements disposed along the signal transmission path between the input and the output; and
a plurality of non-resonant elements coupling the resonant elements together to form a stop band having a plurality of transmission zeroes corresponding to respective frequencies of the resonant elements, and at least one sub-band between the transmission zeroes, wherein the non-resonant elements have susceptance values that locate at least one reflection zero within the stop band to create a pass band in one of the at least one sub-bands, wherein the stop band is in the microwave frequency range.

2. The RF front-end of claim 1 , wherein the microwave frequency range is 800-900 MHz.

3. The RF front-end of claim 1 , wherein the microwave frequency range is 1,800-2,200 MHz.

4. The RF front-end of claim 1 , wherein the at least one sub-band comprises a plurality of sub-bands.

5. The RF front-end of claim 1 , wherein the at least one reflection zero comprises a plurality of reflection zeroes.

6. The RF front-end of claim 1 , wherein each of the resonant elements comprises a thin-film lumped element structure.

7. The RF front-end of claim 6 , wherein the thin-film lumped element structure comprises a high temperature superconductor (HTS).

8. The RF front-end of claim 1 , wherein each of the resonant elements comprises an acoustic resonator.

9. The RF front-end of claim 1 , wherein the plurality of resonant elements is disposed on a substrate, wherein at least one tuning element disposed on the substrate and respectively electrically coupled to at least one of the resonant elements, and wherein a portion of each of the at least one tuning element is configured for being removed from the substrate to modify the frequency of the respective resonant element.

10. The RF front-end of claim 9 , wherein the at least one tuning element comprises a plurality of tuning elements configured for modifying the frequencies of the resonant elements to simultaneously displace the stop band with the pass band along a frequency range.

11. The RF front-end of claim 9 , wherein the portion of the each tuning element is configured for being removed from the substrate via a laser, diamond scribe, focused ion beams, or photolithography.

12. The RF front-end of claim 9 , wherein the each tuning element comprises one or more tabs that can be removed to reduce the shunt capacitance of the respective resonant element.

13. The RF front-end of claim 12 , wherein the one or more tabs comprises an array of tabs connected on an edge of the respective resonant element.

14. The RF front-end of claim 13 , wherein the array of tabs has a size and position are set so as to provide a binary array of shunt capacitive elements of varying sizes defining a tuning range and a minimum tuning resolution.

15. The RF front-end of claim 9 , wherein the each tuning element comprises a tuning fork configured for being trimmed to reduce the shunt capacitance of the respective resonant element.

16. A method of tuning the RF filter of claim 9 , comprising removing the portion of the each tuning element, thereby modifying the frequency of the respective resonant element.

17. The method of claim 16 , wherein the portion of the each tuning element is removed from the substrate, thereby modifying the frequency of the respective resonant element and displacing the transmission zero corresponding to the frequency of the respective resonant element along the stop band relative to the at least one reflection zero.

18. The method of claim 16 , wherein the portion of the each tuning element is removed from the substrate, thereby modifying the frequency of the respective resonant element and displacing the transmission zero corresponding to the frequency of the respective resonant element along the stop band relative to the at least one reflection zero.

19. The method of claim 16 , wherein the portion of the each tuning element is removed from the substrate via a laser, diamond scribe, focused ion beams, or photolithography.

20. The method of claim 16 , wherein the each tuning element comprises one or more tabs that are removed to reduce the shunt capacitance of the respective resonant element.

21. The method of claim 20 , wherein the one or more tabs comprises an array of tabs connected on an edge of the respective resonant element.

22. The method of claim 21 , wherein the array of tabs has a size and position are set so as to provide a binary array of shunt capacitive elements of varying sizes defining a tuning range and a minimum tuning resolution.

23. The method of claim 16 , wherein the each tuning element comprises a tuning fork that is trimmed to reduce the shunt capacitance of the respective resonant element.

24. The RF front-end of claim 1 , further comprising one of a duplexer, multiplexer, channelizer, and reactive switch, wherein the signal transmission path, plurality of resonant elements, and plurality of non-resonant elements are contained in the one of the duplexer, multiplexer, channelizer, and reactive switch.

25. A method of tuning the RF front-end of claim 1 , comprising:
measuring a response of the filter to generate a set of measured data;
analyzing the set of measured data to extract one or more filter design parameters to optimize;
optimizing the one or more filter design parameters to achieve a desired filter response;
generating a tuning recipe based on the one or more optimized filter design parameters; and
tuning the filter by varying one of the non-resonant elements to selectively move the respective reflection zero along the stop band to move the pass band within a selected one of the sub-bands.

26. The method of claim 25 , wherein the response of the filter is measured at an expected operating temperature of the RF filter.

27. The method of claim 25 , wherein the one or more filter design parameters comprises one or both of resonator frequencies and resonator-to-resonator coupling values.

28. A method of constructing the RF front-end of claim 1 , comprising:
designing the RF front-end;
changing the order in which the resonant elements are disposed along the signal transmission path to create a plurality of filter solutions;
computing a performance parameter for each of the filter solutions;
comparing the performance parameters to each other;
selecting one of the filter solutions based on the comparison of the computed performance parameters; and
constructing the RF front-end using the selected filter solution.

29. The method of claim 28 , further comprising generating a coupling matrix representation for each of the filter solutions, wherein the performance parameter for each of the filter solutions is computed from the respective coupling matrix representation.

30. The method of claim 28 , wherein the filter design includes nodes respectively between a first set of the non-resonant elements, nodes respectively between the plurality of resonant elements and the set of the non-resonant elements, and nodes at the input and output, wherein each dimension of the coupling matrix includes the nodes.

31. The method of claim 30 , further comprising reducing each cou

Assignees

• Resonant Inc

Inventors

• Tsuzuki Genichi
• Willemsen Balam A

Classifications

• H03H7/06

  including resistors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence) · CPC title

• Y10T29/49018

  with other electrical component · CPC title

• H03H9/171

  implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type · CPC title

• H03H7/0161 Primary

  Bandpass filters (H03H7/12 takes precedence) · CPC title

• H03H7/54

  Modifications of networks to reduce influence of variations of temperature · CPC title