Motor drive with silicon carbide MOSFET switches

Patent metadata

Field	Value
Publication number	US-9787212-B2
Application number	US-201514698925-A
Country	US
Kind code	B2
Filing date	Apr 29, 2015
Priority date	May 5, 2014
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

Motor drive power conversion systems are provided including a rectifier and a switching inverter, wherein the switching devices of the rectifier, the inverter and/or of a DC/DC converter are silicon carbide switches, such as silicon carbide MOSFETs. Driver circuits are provided for providing bipolar gate drive signals to the silicon carbide MOSFETs, including providing negative gate-source voltage for controlling the off state of enhancement mode low side drivers and positive gate-source voltage for controlling the off state of enhancement mode high side drivers.

First claim

The following is claimed:

1. A power conversion system, comprising:
an active rectifier comprising a plurality of rectifier switching devices coupled to receive AC input power from an external power source and operative to provide a DC output according to a plurality of rectifier switching control signals;
a switching inverter comprising a plurality of inverter switching devices coupled to receive DC input power and operative to provide an AC output to drive a load according to a plurality of inverter switching control signals; and
a controller operative to generate the rectifier switching control signals to operate the rectifier switching devices, and to generate the inverter switching control signals to operate the inverter switching devices;
wherein at least some of the switching devices of at least one of the rectifier and the switching inverter are silicon carbide switches;
wherein the at least one of the rectifier and the inverter includes a plurality of low side silicon carbide switches operatively coupled with a DC bus connection; the power conversion system comprising a driver circuit operative to provide a set of the switching control signals to the low side silicon carbide switches in a first state at a first voltage above a voltage of the DC bus connection and in a second state at a second voltage below the voltage of the DC bus connection;
the power conversion system further comprising:
a driver supply circuit, including:
a first voltage node providing a first supply voltage to the driver circuit for providing the set of the switching control signals in the first state at the first voltage above the voltage of the DC bus connection,
a second voltage node providing a second supply voltage to the driver circuit for providing the second set of the switching control signals in the second state at the second voltage below the voltage of the DC bus connection,
an intermediate node connected to the DC bus connection,
a zener diode with an anode connected to the intermediate node and a cathode connected to the first voltage node to provide a positive voltage at the first voltage node with respect to the intermediate node,
a capacitance connected between the intermediate node and the second voltage node to provide a negative voltage at the second voltage node with respect to the intermediate node, and
a DC supply providing a positive DC voltage between the first and second voltage nodes.

2. The power conversion system of claim 1 , wherein at least some of the switching devices of the at least one of the rectifier and the inverter are enhancement mode devices.

3. The power conversion system of claim 1 , wherein at least some of the switching devices of the at least one of the rectifier and the inverter are depletion mode devices.

4. The power conversion system of claim 1 , wherein the power conversion system is a voltage source converter motor drive.

5. The power conversion system of claim 1 , wherein the power conversion system is a current source converter motor drive.

6. The power conversion system of claim 1 , wherein at least some of the switching devices of the at least one of the rectifier and the inverter are P-channel silicon carbide MOSFETs.

7. The power conversion system of claim 1 , wherein at least some of the switching devices of the at least one of the rectifier and the inverter are N-channel silicon carbide MOSFETs.

8. The power conversion system of claim 1 :
wherein the at least one of the rectifier and the inverter includes:
a plurality of high side silicon carbide switches operatively coupled with a first DC bus connection, and
a plurality of low side silicon carbide switches operatively coupled with a second DC bus connection;

the power conversion system comprising a driver circuit operative to:
provide a first set of the switching control signals to the high side silicon carbide switches in a first state at a first voltage above a voltage of the first DC bus connection and in a second state at a second voltage below the voltage of the first DC bus connection, and
provide a second set of the switching control signals to the low side silicon carbide switches in a first state at a third voltage above a voltage of the second DC bus connection and in a second state at a fourth voltage below the voltage of the second DC bus connection.

9. The power conversion system of claim 1 , wherein the DC supply includes a transformer secondary winding and a rectifier.

10. A power conversion system, comprising:
an active rectifier comprising a plurality of rectifier switching devices coupled to receive AC input power from an external power source and operative to provide a DC output according to a plurality of rectifier switching control signals;
a switching inverter comprising a plurality of inverter switching devices coupled to receive DC input power and operative to provide an AC output to drive a load according to a plurality of inverter switching control signals; and
a controller operative to generate the rectifier switching control signals to operate the rectifier switching devices, and to generate the inverter switching control signals to operate the inverter switching devices;
wherein at least some of the switching devices of at least one of the rectifier and the switching inverter are silicon carbide switches;
wherein the at least one of the rectifier and the inverter includes:
a plurality of high side silicon carbide switches operatively coupled with a first DC bus connection, and
a plurality of low side silicon carbide switches operatively coupled with a second DC bus connection:

the power conversion system comprising a driver circuit operative to:
provide a first set of the switching control signals to the high side silicon carbide switches in a first state at a first voltage above a voltage of the first DC bus connection and in a second state at a second voltage below the voltage of the first DC bus connection, and
provide a second set of the switching control signals to the low side silicon carbide switches in a first state at a third voltage above a voltage of the second DC bus connection and in a second state at a fourth voltage below the voltage of the second DC bus connection; and

a first driver supply circuit, including:
a first voltage node providing a first supply voltage to the driver circuit for providing the first set of the switching control signals in the first state at the first voltage above the voltage of the first DC bus connection,
a second voltage node providing a second supply voltage to the driver circuit for providing the second set of the switching control signals in the second state at the second voltage below the voltage of the first DC bus connection,
a first intermediate node,
a first zener diode with an anode connected to the first intermediate node and a cathode connected to the first voltage node to provide a positive voltage at the first voltage node with respect to the first intermediate node,
a first capacitance connected between the first intermediate node and the second voltage node to provide a negative voltage at the second voltage node with respect to the first intermediate node, and
a first DC supply providing a positive DC voltage between the first and second voltage nodes; and

a second driver supply circuit, including:
a third voltage node providing a third supply voltage to the driver circuit for providing the second set of the switching control signals in the first state at the third voltage above the voltage of the second DC bus connection,
a fourth voltage node providing a fourth supply voltage to the driver circuit for providing the second set of the switching control signals in the second state at the f

Assignees

• Rockwell Automation Tech Inc

Inventors

• Baumann Kevin
• Lukaszewski Richard
• Tallam Rangarajan
• Wei Lixiang
• Gettelfinger Lee
• Morris Garron
• Weiss Bruce
• Gollhardt Neil
• Zargari Navid R
• Brumsickle William
• Reese Robert Wright
• Denning Stephen E

Classifications

• H02M5/4585

  having a rectifier with controlled elements · CPC title

• H02M1/08

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

• H02M5/458 Primary

  using semiconductor devices only · CPC title

• H02P27/06 Primary

  using DC to AC converters or inverters (H02P27/05 takes precedence) · CPC title

• Y02B70/1483

  Cross-Sectional Technologies · mapped topic