Over-current protection device

US9787079B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9787079-B2
Application numberUS-201214372608-A
CountryUS
Kind codeB2
Filing dateJan 20, 2012
Priority dateJan 20, 2012
Publication dateOct 10, 2017
Grant dateOct 10, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An over-current protection circuit including, a current supply switch with a first terminal coupled to a supply current input and with a second terminal coupled to a supply current output. The current supply switch is switchable at least between an on-state, in which the current supply switch provides a conductive connection between the first terminal and the second terminal, and an off-state, in which the current supply switch interrupts the conductive connection between the first terminal and the second terminal. The over-current protection circuit receives a supply current via the supply current input and provides the supply current via the supply current output if the switch is in the on-state. The current supply switch includes a High Electron Mobility Transistor.

First claim

Opening claim text (preview).

The invention claimed is: 1. An over-current protection circuit comprising: a supply current input; a supply current output; a current supply switch comprising a first switch terminal coupled to the supply current input, a second switch terminal coupled to the supply current output, a third switch terminal coupled to a gate driver, and a high electron mobility transistor (HEMT) comprising a first current electrode coupled to the first switch terminal, a second current electrode coupled to the second switch terminal, and a control electrode coupled to the third switch terminal, wherein the current supply switch provides an on-state, in which the current supply switch provides a conductive connection between the first switch terminal and the second switch terminal, and an off-state, in which the current supply switch interrupts the conductive connection between the first switch terminal and the second switch terminal wherein the HEMT is a normally-on transistor; a sense transistor comprising a first current electrode coupled to the first switch terminal, a second current electrode, and a control electrode coupled to the third switch terminal; and a switch control device including: an operational amplifier having a first input terminal coupled to the second current electrode of the sense transistor, a second input terminal coupled to the second switch terminal, and an output terminal: a comparator transistor having a first current electrode coupled to the in put terminal of the operational amplifier, a second current electrode, and a control electrode coupled to the output terminal of the operational amplifier; and a comparator having an input terminal coupled to the second current electrode of the comparator transistor, and an output terminal coupled to the gate driver; the switch control device arranged to control the current supply switch of an over-current protection device based on level of a supply current provided to the over-current protection circuit, and to control the current supply switch into the off-state if the supply current is larger than a limit current, and wherein the over-current protection circuit provides an instant reaction to the supply current being larger than the limit current based on the HEMT being the normally-on transistor; and the over-current protection circuit is configured to receive the supply current via the supply current input and to provide the supply current via the supply current output if the current supply switch is in the on-state. 2. Over-current protection circuit according to claim 1 , wherein the HEMT is a bidirectional transistor. 3. Over-current protection circuit according to claim 1 , wherein the HEMT is a GaN transistor. 4. Over-current protection circuit according to claim 1 , further comprising a current measure device arranged for measurement of the supply current. 5. Over-current protection circuit according to claim 4 , wherein the current supply switch is connected or connectable to the switch control device arranged to control the current supply switch to switch between the on-state and the off-state or vice versa. 6. Over-current protection circuit according to claim 5 , wherein the switch control device is arranged to control the current supply switch based on a current value measured via the current measure device. 7. Over-current protection circuit according to claims 4 , wherein the current measure device comprises a measurement HEMT. 8. Over-current protection circuit according to claim 7 , wherein the measurement HEMT is arranged on the same die as the HEMT of the current supply switch. 9. Over-current protection device according to claim 1 , wherein the switch control device comprises a limit current control device arranged to set at least one limit current. 10. Over-current protection device according to claim 9 , wherein the at least one limit current represents an upper limit for supply current. 11. Over-current protection device according to claim 1 , wherein the switch control device is arranged to compare the supply current to the limit current. 12. Electronic device with an over-current protection circuit according to claim 1 . 13. The over-current protection circuit of claim 1 , the gate driver to control the on-off state of both the HEMT and the sense transistor based on a sense current from the sense transistor and a supply current from the HEMT. 14. An over-current protection circuit comprising: a first die comprising a first integrated circuit, the first integrated circuit comprising a control circuit, the control circuit comprising a gate driver; a second die comprising a second integrated circuit, the second integrated circuit comprising: a supply current input; a supply current output; a current supply switch comprising a first switch terminal coupled to the supply current input, a second switch terminal coupled to the supply current output, and a high electron mobility transistor (HEMT), wherein the current supply switch provides an on-state, in which the current supply switch provides a conductive connection between the first switch terminal and the second switch terminal, and an off-state, in which the current supply switch interrupts the conductive connection between the first switch terminal and the second switch terminal; and a switch control device including: an operational amplifier having a first input terminal coupled to the second current electrode of the sense transistor a second input terminal coupled to the second switch terminal, and an output terminal; a comparator transistor having a first current electrode coupled to the first in put terminal of the operational amplifier, a second current electrode, and a control electrode coupled to the output terminal of the operational amplifier; and a comparator having an input terminal coupled to the second current electrode of the comparator transistor, and an output terminal coupled to the gate driver; the switch control device arranged to control the current supply switch of an over-current protection device based on level of a supply current provided to the over-current protection circuit, and to control the current supply switch into the off-state if the supply current is larger than a limit current, and wherein the over-current protection circuit provides an instant reaction to the supply current being larger than the limit current based on the HEMT being a normally-on transistor; and the over-current protection circuit is configured to receive a supply current via the supply current input and to provide the supply current via the supply current output if the current supply switch is in the on-state. 15. The over-current protection circuit of claim 14 , the control circuit further comprising: a sensor current input to receive a sense current; and a supply current input to receive the supply current from the second current electrode of the HEMT, wherein the control circuit compares the sense current with the supply current. 16. The over-current protection circuit of claim 14 , wherein the HEMT is a GaN transistor. 17. An over-current protection circuit comprising: a first die comprising a first integrated circuit, the first integrated circuit comprising a control circuit, the control circuit comprising a gate driver; a second die comprising a second integrated circuit, the second integrated circuit comprising: a supply current input; a supply current output; a current supply switch comprising: a first switch terminal coupled to the supply current input; a second switch terminal couple

Assignees

Inventors

Classifications

  • H02H3/02Primary

    Details · CPC title

  • H02H3/08Primary

    responsive to excess current (responsive to abnormal temperature caused by excess current H02H5/04) · CPC title

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What does patent US9787079B2 cover?
An over-current protection circuit including, a current supply switch with a first terminal coupled to a supply current input and with a second terminal coupled to a supply current output. The current supply switch is switchable at least between an on-state, in which the current supply switch provides a conductive connection between the first terminal and the second terminal, and an off-state, …
Who is the assignee on this patent?
Renaud Philippe, Dupuy Philippe, Nxp Usa Inc
What technology area does this patent fall under?
Primary CPC classification H02H3/02. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).