Semiconductor laser element

Patent metadata

Field	Value
Publication number	US-9787061-B2
Application number	US-201415034640-A
Country	US
Kind code	B2
Filing date	Nov 6, 2014
Priority date	Nov 19, 2013
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A semiconductor laser element includes a stacked structure body, a second electrode 62 , and a first electrode 61 ; a ridge stripe structure 71 formed of at least part of the stacked structure body is formed; a side structure body 72 formed of the stacked structure body is formed on both sides of the ridge stripe structure 71 ; the second electrode 62 is separated into a first portion for sending a direct current to the first electrode via a light emitting region and a second portion 62 B for applying an electric field to a saturable absorption region; a protection electrode 81 is formed on a portion adjacent to the second portion 62 B of the second electrode of at least one side structure body 72 ; and an insulating layer 56 made of an oxide insulating material is formed to extend from on a portion of the ridge stripe structure 71 to on a portion of the side structure body 72 , on which portions neither the second electrode nor the protection electrode 81 is formed.

First claim

The invention claimed is:

1. A semiconductor laser element comprising:
(a) a stacked structure body in which a first compound semiconductor layer having a first conductivity type and made of a compound semiconductor, a third compound semiconductor layer configured to form a light emitting region and a saturable absorption region made of a compound semiconductor, and a second compound semiconductor layer having a second conductivity type different from the first conductivity type and made of a compound semiconductor are sequentially stacked;
(b) a second electrode; and
(c) a first electrode electrically connected to the first compound semiconductor layer, wherein
a ridge stripe structure formed of at least part of the stacked structure body is formed,
a side structure body formed of the stacked structure body is formed on both sides of the ridge stripe structure,
the second electrode formed on the second compound semiconductor layer forming the ridge stripe structure is separated into a first portion for sending a direct current to the first electrode via the light emitting region to create a forward bias state and a second portion for applying an electric field to the saturable absorption region,
a protection electrode is formed on a portion adjacent to the second portion of the second electrode of at least one of the side structure bodies, and
an insulating film made of an oxide insulating material is formed to extend from on a portion of the ridge stripe structure to on a portion of the side structure body, on which portions neither the second electrode nor the protection electrode is formed.

2. The semiconductor laser element according to claim 1 , wherein the oxide insulating material is made of SiO x .

3. The semiconductor laser element according to claim 1 , wherein
the first portion of the second electrode is covered by a first lead-out wiring layer formed on the insulating film, and
the second portion of the second electrode and the protection electrode are covered by a second lead-out wiring layer formed on the insulating film.

4. The semiconductor laser element according to claim 3 , wherein the first lead-out wiring layer and the second lead-out wiring layer are formed, being spaced from each other, to extend from on the ridge stripe structure to on the side structure body.

5. The semiconductor laser element according to claim 4 , wherein a wire bonding layer extending from the second lead-out wiring layer is provided on the insulating film formed on one of the side structure bodies.

6. The semiconductor laser element according to claim 5 , wherein a surge protection electrode covered by the wire bonding layer is formed on a portion of the one of the side structure bodies located between a portion of the wire bonding layer where wire bonding is made and the second lead-out wiring layer.

7. The semiconductor laser element according to claim 1 , wherein
a light reflecting end surface and a light emitting end surface are provided, and
the second portion of the second electrode is provided near the light reflecting end surface.

8. The semiconductor laser element according to claim 1 , wherein the stacked structure body is made of a GaN-based compound semiconductor.

9. A semiconductor laser element comprising:
(a) a stacked structure body in which a first compound semiconductor layer having a first conductivity type and made of a compound semiconductor, a third compound semiconductor layer configured to form a light emitting region and a saturable absorption region made of a compound semiconductor, and a second compound semiconductor layer having a second conductivity type different from the first conductivity type and made of a compound semiconductor are sequentially stacked;
(b) a second electrode; and
(c) a first electrode electrically connected to the first compound semiconductor layer, wherein
a ridge stripe structure formed of at least part of the stacked structure body is formed,
a side structure body formed of the stacked structure body is formed on both sides of the ridge stripe structure,
the second electrode formed on the second compound semiconductor layer forming the ridge stripe structure is separated into a first portion for sending a direct current to the first electrode via the light emitting region to create a forward bias state and a second portion for applying an electric field to the saturable absorption region,
the first portion of the second electrode is covered by a first lead-out wiring layer formed on an insulating film,
the second portion of the second electrode is covered by a second lead-out wiring layer formed on the insulating film,
a wire bonding layer extending from the second lead-out wiring layer is provided on the insulating film formed on one of the side structure bodies, and
a surge protection electrode covered by the wire bonding layer is formed on a portion of the one of the side structure bodies located between a portion of the wire bonding layer where wire bonding is made and the second lead-out wiring layer.

Assignees

• Sony Corp

Inventors

• Wada Shinichi
• Kuramoto Masaru
• Watanabe Hideki

Classifications

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/04252

  characterised by the material · CPC title

• H01S5/0287

  Facet reflectivity · CPC title

• H01S5/2214

  based on oxides or nitrides · CPC title

• H01S5/34333 Primary

  with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser · CPC title