Temperature insensitive external cavity lasers on silicon

Patent metadata

Field	Value
Publication number	US-9787052-B2
Application number	US-201615183137-A
Country	US
Kind code	B2
Filing date	Jun 15, 2016
Priority date	Apr 9, 2015
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A technique related to a semiconductor chip is provided. An optical gain chip is attached to a semiconductor substrate. An integrated photonic circuit is on the semiconductor substrate, and the optical gain chip is optically coupled to the integrated photonic circuit thereby forming a laser cavity. The integrated photonic circuit includes an active intra-cavity thermo-optic optical phase tuner element, an intra-cavity optical band-pass filter, and an output coupler band-reflect optical grating filter with passive phase compensation. The active intra-cavity thermo-optic optical phase tuner element, the intra-cavity optical band-pass filter, and the output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together.

First claim

What is claimed is:

1. A method of configuring a semiconductor, the method comprising:
providing a light source relative to a semiconductor substrate; and
providing a circuit on the semiconductor substrate, the light source optically coupled to the circuit thereby forming a laser cavity, wherein the circuit includes an active intra-cavity thermo-optic optical phase tuner element coupled to an output coupler band-reflect optical grating filter with passive phase compensation.

2. The method of claim 1 , wherein the circuit further includes an intra-cavity optical band-pass filter.

3. The method of claim 2 , wherein the active intra-cavity thermo-optic optical phase tuner element, the intra-cavity optical band-pass filter, and output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together.

4. The method of claim 1 , wherein the light source is an optical gain device.

5. The method of claim 1 , wherein the semiconductor is a semiconductor chip.

6. The method of claim 1 , further comprising coupling a mode converter between the light source and the circuit.

7. The method of claim 1 , wherein the output coupler band-reflect optical grating filter with passive phase compensation is configured to reduce a net round trip phase change to within 4π over a temperature range.

8. The method of claim 7 , wherein the temperature range is 0-85° Celsius.

9. The method of claim 1 , wherein the output coupler band-reflect optical grating filter with passive phase compensation comprises a distributed reflector grating element.

10. The method of claim 9 , wherein the distributed reflector grating element has a smaller pitch at a first end and a wider pitch at a second end.

11. The method of claim 10 , wherein the distributed reflector grating element is configured to shorten an effective cavity of the laser cavity with increasing temperature through increased index contract.

12. The method of claim 11 , wherein the distributed reflector grating element has an elongated direction and a width direction.

13. The method of claim 12 , wherein the distributed reflector grating element changes in pitch along the elongated direction such that the distributed reflector grating element varies from the smaller pitch at the first end and increases to the wider pitch at the second end.

14. The method of claim 1 , wherein the circuit is an integrated photonic circuit.

15. A method of configuring a semiconductor, the method comprising:
providing a light source relative to a semiconductor substrate; and
providing a plurality of circuit on the semiconductor substrate, the light source optically coupled to the circuit thereby forming a laser cavity, wherein the plurality of circuits each include an active intra-cavity thermo-optic optical phase tuner element coupled to an output coupler band-reflect optical grating filter with passive phase compensation, wherein an N-port demultiplexing filter is configured to provide different wavelengths of light to individual ones of the plurality of circuits.

16. The method of claim 15 , wherein each of the plurality of circuits further includes an intra-cavity optical band-pass filter.

17. The method of claim 16 , wherein the active intra-cavity thermo-optic optical phase tuner element, the intra-cavity optical band-pass filter, and output coupler band-reflect optical grating filter with passive phase compensation are optically coupled together.

18. The method of claim 15 , wherein the light source is an optical gain device.

19. The method of claim 15 , wherein the semiconductor is a semiconductor chip.

20. The method of claim 15 , further comprising coupling a mode converter between the light source and the N-port demultiplexing filter.

Assignees

• IBM

Inventors

• Orcutt Jason S

Classifications

• H01S5/125

  Distributed Bragg reflector [DBR] lasers · CPC title

• H01S5/3013

  AIIIBV compounds · CPC title

• H04B10/802

  for isolation, e.g. using optocouplers · CPC title

• H01S5/0287

  Facet reflectivity · CPC title

• H01S5/02292

  Electricity · mapped topic