Continuous, floating evaporative assembly of aligned carbon nanotubes
US-9425405-B1 · Aug 23, 2016 · US
Floating evaporative assembly of aligned carbon nanotubes
US9786853B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9786853-B2 |
| Application number | US-201515118058-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 11, 2015 |
| Priority date | Feb 11, 2014 |
| Publication date | Oct 10, 2017 |
| Grant date | Oct 10, 2017 |
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Abstract
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High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a film of aligned semiconducting-Single Wall Carbon Nanotube (s-SWCNTs) on a substrate, the method comprising: (a) spreading a liquid solution comprising semiconductor-selective- polymer-wrapped s-SWCNTs dispersed in an organic solvent across the surface of a hydrophobic substrate, wherein the concentration of semiconductor-selective-polymer-wrapped s-SWCNTs in the liquid solution is no greater than 50 μg/ml; and (b) withdrawing the hydrophobic substrate from the liquid solution, wherein the semiconductor-selective-polymer-wrapped s-SWCNTs from the liquid solution are deposited as a film of aligned semiconductor-selective-polymer-wrapped s-SWCNTs on the hydrophobic substrate; wherein the hydrophobic substrate is withdrawn from the liquid solution, and the film of aligned semiconductor-selective-polymer-wrapped s-SWCNTs is formed, at a rate of at least 1 mm/min and further wherein the film of aligned semiconductor-selective-polymer-wrapped s-SWCNTs has a s-SWCNT linear packing density of at least 35 s-SWCNTs/μm. 2. The method of claim 1 , wherein the concentration of semiconductor-selective-polymer-wrapped s-SWCNTs in the liquid solution is no greater than 10 μg/ml. 3. The method of claim 1 , wherein the concentration of semiconductor-selective-polymer-wrapped s-SWCNTs in the liquid solution is in the range from 1 μg/ml to 50 μg/ml. 4. The method of claim 1 , wherein the concentration of semiconductor-selective-polymer-wrapped s-SWCNTs in the liquid solution is in the range from 1 82 g/ml to 10 μg/ml. 5. The method of claim 1 , wherein the hydrophobic substrate is withdrawn from the liquid solution, and the film of aligned semiconductor-selective-polymer-wrapped s-SWCNTs is formed, at a rate of at least 5 mm/min. 6. The method of claim 5 , wherein the concentration of semiconductor-selective-polymer-wrapped s-SWCNTs in the liquid solution is in the range from 1 μg/ml to 50 μg/ml.
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Electricity · mapped topic
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- What does patent US9786853B2 cover?
- High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon …
- Who is the assignee on this patent?
- Wisconsin Alumni Res Found
- What technology area does this patent fall under?
- Primary CPC classification H01L51/0558. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).