Semiconductor device with well resistor and alternated insulating and active regions between input and output terminals

Patent metadata

Field	Value
Publication number	US-9786738-B2
Application number	US-201514807757-A
Country	US
Kind code	B2
Filing date	Jul 23, 2015
Priority date	Aug 13, 2014
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device are provided.
The semiconductor device includes a semiconductor substrate, a well region, an input terminal, an output terminal, a separation insulating film, and an active region. The input terminal and the output terminal are electrically coupled to the well region. The separation insulating film is arranged to be in contact with the upper surface of the well region in an intermediate region between the input terminal and the output terminal. The active region is arranged to be in contact with the upper surface of the well region. The separation insulating film and the active region in the intermediate region have an elongated shape in plan view. In the intermediate region, a plurality of separation insulating films and a plurality of active regions are alternately and repeatedly arranged.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate including a main surface;
a well region formed in the semiconductor substrate;
a plurality of input terminals and a plurality of output terminals that are arranged over the semiconductor substrate so as to be electrically coupled to the well region;
separation insulating films arranged in an intermediate region between the plurality of input terminals and the plurality of output terminals in a first direction along the main surface, the separation insulating films being in contact with an upper surface of the well region; and
active regions arranged between two outmost separation insulating films of the separation insulating films in the intermediate region and being in contact with the upper surface of the well region in the semiconductor substrate, a distance between the two outmost separation insulating films being greater than distances of any other two of the separation insulating films, and the separation insulating films and the active regions being alternately arranged,
wherein each of the separation insulating films and each of the active regions in the intermediate region have an elongated shape in plan view.

2. The semiconductor device according to claim 1 ,
wherein the separation insulating films and the active regions form the same surface as the main surface of the semiconductor substrate.

3. The semiconductor device according to claim 1 ,
wherein the first direction is a direction connecting the plurality of input terminals and the plurality of output terminals across the intermediate region in plan view,
each active region in the intermediate region extends in a second direction crossing the first direction, and
in the second direction, a length of each active region is greater than a greatest distance between any two of the plurality of input terminals or greater than a greatest distance between any of two of the plurality of output terminals.

4. The semiconductor device according to claim 1 ,
wherein the first direction crosses a direction connecting the plurality of input terminals and the plurality of output terminals across the intermediate region in plan view, and
each active region in the intermediate region extends in a second direction crossing the first direction and contacts with first and second conductive layers respectively disposed below the plurality of input terminals and the plurality of output terminals.

5. The semiconductor device according to claim 4 ,
wherein the plurality of input terminals are spaced apart from each other, and the plurality of the output terminals are spaced apart from each other, and
each separation insulating film in the intermediate region extends so as to reach a region sandwiched by a pair of input terminals adjacent to each other in plan view among the plurality of input terminals and a region sandwiched by a pair of output terminals adjacent to each other in plan view among the plurality of output terminals.

6. The semiconductor device according to claim 1 ,
wherein each of the plurality of input terminals and the plurality of output terminals is electrically coupled with the well region by a contact region.

7. The semiconductor device according to claim 6 , wherein the contact region has a conductivity type the same as the active regions and an impurity concentration greater than that of the active regions.

8. The semiconductor device according to claim 1 ,
wherein additional separation insulating films are arranged to be in contact with upper surfaces of the active regions in the intermediate region, and
the separation insulating films and the additional separation insulating films are alternately arranged in the intermediate region, so that the additional separation insulating films are formed to include the same surface as the main surface of the semiconductor substrate.

9. The semiconductor device according to claim 1 , wherein the well region and the active regions are one integral layer.

10. The semiconductor device according to claim 9 , wherein the well region and the active regions have the same impurities.

11. A semiconductor device comprising:
a semiconductor substrate including a main surface;
a well region formed in the semiconductor substrate;
an input terminal and an output terminal that are arranged over the semiconductor substrate so as to be electrically coupled to the well region;
separation insulating films arranged in an intermediate region between the input terminal and the output terminal in a direction along the main surface, the separation insulating films being in contact with an upper surface of the well region; and
active regions arranged between two outmost separation insulating films of the separation insulating films in the intermediate region and being in contact with the upper surface of the well region in the semiconductor substrate, a distance between the two outmost separation insulating films being greater than distances of any other two of the separation insulating films, and the separation insulating films and the active regions being alternately arranged,
wherein each of the separation insulating films and each of the active regions in the intermediate region have an elongated shape in plan view, and
a gate insulating film and a gate electrode are laminated in this order so as to cover the main surface of the semiconductor substrate in the intermediate region.

Assignees

• Renesas Electronics Corp

Inventors

• Hayashi Kiyoshi

Classifications

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H01L29/0692

  Electricity · mapped topic

• H01L29/0653 Primary

  Electricity · mapped topic

• H01L27/0629

  Electricity · mapped topic