Scanning ion beam deposition and etch
US-12176178-B2 · Dec 24, 2024 · US
Plasma etcher design with effective no-damage in-situ ash
US9786471B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9786471-B2 |
| Application number | US-201113337418-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 27, 2011 |
| Priority date | Dec 27, 2011 |
| Publication date | Oct 10, 2017 |
| Grant date | Oct 10, 2017 |
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- Title
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Abstract
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In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etching is completed the bias voltage and direct plasma source are turned off. The localized plasma source is then operated to provide a low potential, localized plasma to a position within the processing chamber that is spatially separated from the workpiece. The spatial separation results in formation of a diffused plasma having a zero/low potential that is in contact with the workpiece. The zero/low potential of the diffused plasma allows for reactive ashing to be performed, while mitigating workpiece damage resulting from ion bombardment caused by positive plasma potentials.
First claim
Opening claim text (preview).
What is claimed is: 1. A plasma etching system, comprising a processing chamber configured to house a semiconductor workpiece; a first plasma source comprising a first RF antenna coupled to a first RF power supply and configured to generate an etching plasma, that extends from an intermediate height of the processing chamber vertically down to an upper surface of the semiconductor workpiece, by exciting a first etching gas chemistry using a first RF signal having a first frequen…
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Classifications
Electricity · mapped topic
- H10P50/242Primary
Electricity · mapped topic
Physics · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9786471B2 cover?
- In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etchi…
- Who is the assignee on this patent?
- Xiao Ying, Lin Chin-Hsiang, Taiwan Semiconductor Mfg Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/242. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).