Semiconductor memory apparatus
US-2015055418-A1 · Feb 26, 2015 · US
US9786337B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9786337-B2 |
| Application number | US-201615259412-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 8, 2016 |
| Priority date | Mar 7, 2016 |
| Publication date | Oct 10, 2017 |
| Grant date | Oct 10, 2017 |
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A sensing buffer, or peripheral circuit or memory device may be provided. The sensing buffer may be configured to maintain a predetermined current according to a first current regardless of an external power supply and/or a temperature.
Opening claim text (preview).
What is claimed is: 1. A sensing buffer, comprising: a first input circuit coupled between an external power supply and a ground voltage and configured to generate a first current according to a reference voltage; a first mirror circuit configured to maintain a predetermined current of a first node according to the first current regardless of the external power supply and a temperature applied to the sensing buffer; a second input circuit including a second node coupled to the first node, wherein a predetermined current of a third node is based on a sensing voltage and the current of the first and second nodes; and a resistor coupled between the first and second nodes and configured to maintain a predetermined current between the first and second input circuits. 2. The sensing buffer according to claim 1 , wherein the first input circuit receives the external power supply through an external power supply terminal and generates a current path such that the first current flows between the external power supply terminal and a ground voltage terminal in response to the reference voltage. 3. The sensing buffer according to claim 1 , wherein the second input circuit receives the external power supply and generates a current path between the external power supply and the ground voltage in response to the sensing voltage. 4. The sensing buffer according to claim 1 , wherein the first mirror circuit operates in a saturation state such that a predetermined current of the first node flows. 5. The sensing buffer according to claim 1 , further comprising: a second mirror circuit configured to maintain predetermined currents mirrored in the first mirror circuit. 6. The sensing buffer according to claim 5 , further comprising: boosting circuits configured for amplifying an amount of an internal current based on a current flowing through the second mirror circuit.
with means for avoiding disturbances due to temperature effects · CPC title
Control thereof · CPC title
Differential amplifiers of latching type · CPC title
using complementary field-effect transistors (H03K3/35625 takes precedence) · CPC title
Isolation gates, i.e. gates coupling bit lines to the sense amplifier · CPC title
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