Semiconductor device, computer, and electronic device

Patent metadata

Field	Value
Publication number	US-9785566-B2
Application number	US-201615354135-A
Country	US
Kind code	B2
Filing date	Nov 17, 2016
Priority date	Nov 18, 2015
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A novel semiconductor device, a semiconductor device capable of operating at high speed, or a semiconductor device with low power consumption is provided. The semiconductor device includes a memory cell, a first circuit, a second circuit, and a wiring. The memory cell has a function of storing first data and has a function of supplying a first current corresponding to the first data to the wiring. The first circuit has a function of supplying a second current corresponding to second data to the wiring input from the outside. The second circuit has a function of performing correction of a current flowing in the wiring in the case where a value of the first current and a value of the second current are different from each other. The second circuit has a function of generating a signal including information on whether the correction is performed or not.

First claim

What is claimed is:

1. A semiconductor device comprising:
a memory cell;
a first circuit;
a second circuit; and
a wiring,
wherein the memory cell is configured to store first data,
wherein the memory cell is configured to supply a first current corresponding to the first data to the wiring,
wherein the first circuit is configured to supply a second current corresponding to second data to the wiring input from an outside,
wherein the second circuit is configured to perform correction of a current flowing in the wiring when a value of the first current and a value of the second current are different from each other, and
wherein the second circuit is configured to generate a signal including information on whether the correction is performed or not.

2. The semiconductor device according to claim 1 ,
wherein the correction of the current is performed by generation of a third current supplied from the second circuit to the wiring or a fourth current supplied from the wiring to the second circuit, and
wherein each of the third current and the fourth current is a current corresponding to a difference between the first current and the second current.

3. The semiconductor device according to claim 1 ,
wherein the semiconductor device is configured to write the second data to the memory cell by supply of the second current to the memory cell.

4. The semiconductor device according to claim 1 ,
wherein the memory cell includes a first transistor, a second transistor, a third transistor, and a capacitor,
wherein a gate of the first transistor is electrically connected to a first electrode of the capacitor and one of a source and a drain of the second transistor, and
wherein one of a source and a drain of the first transistor is electrically connected to a second electrode of the capacitor and one of a source and a drain of the third transistor.

5. The semiconductor device according to claim 4 , wherein the second transistor comprises an oxide semiconductor in a channel formation region.

6. A computer comprising:
a cache memory comprising the semiconductor device according to claim 1 and;
a control circuit,
wherein the cache memory comprises a memory region including a plurality of memory cells,
wherein the memory region is configured to store tag data,
wherein the control circuit is configured to output an address signal to the cache memory,
wherein the tag data corresponds to a collection of the first data stored in the memory region, and
wherein the address signal corresponds to a collection of the second data.

7. An electronic device comprising the semiconductor device according to claim 1 .

8. An electronic device comprising the computer according to claim 6 .

Assignees

• Semiconductor Energy Lab

Inventors

• Kurokawa Yoshiyuki

Classifications

• H10W72/552

  comprising metals or metalloids, e.g. silver · CPC title

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W72/075

  of bond wires · CPC title

• H10D84/01

  Manufacture or treatment · CPC title

• H01L27/1225

  Electricity · mapped topic