Resist composition

US9785048B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9785048-B2
Application numberUS-201414895634-A
CountryUS
Kind codeB2
Filing dateMay 28, 2014
Priority dateJun 7, 2013
Publication dateOct 10, 2017
Grant dateOct 10, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The resist composition according to the present invention is a resist composition comprising a solid component comprising a resist base material, and a solvent. In the resist composition according to the present invention, the resist composition contains 1 to 80% by mass of the solid component and 20 to 99% by mass of the solvent, the resist base material comprises a compound (ctt form) represented by a predetermined formula (1) and a compound represented by a predetermined formula (3), the proportion of the compound (ctt form) represented by the predetermined formula (1) to the resist base material is from 65 to 99% by mass, and the mass ratio of the compound represented by the predetermined formula (3) to the compound (ctt form) represented by the predetermined formula (1) is from 0.01 to 0.53.

First claim

Opening claim text (preview).

The invention claimed is: 1. A resist composition comprising an acid crosslinking agent (G), a solid component comprising a resist base material, and a solvent, wherein the resist composition comprises 1 to 80% by mass of the solid component and 20 to 99% by mass of the solvent, the resist base material comprises a compound (ctt form) represented by the formula (1) and a compound represented by the formula (3), a proportion of the compound (ctt form) represented by the formula (1) to the resist base material is from 65 to 99% by mass, and a mass ratio of the compound represented by the formula (3) to the compound (ctt form) represented by the formula (1) is from 0.01 to 0.53: (in formula (1), R are each independently a hydrogen atom, a substituted or unsubstituted heterocyclic group, a halogen atom, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted branched aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted amino group having 0 to 20 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms, a substituted or unsubstituted acyl group having 1 to 20 carbon atoms, a substituted or unsubstituted alkoxycarbonyl group having 2 to 20 carbon atoms, a substituted or unsubstituted alkyloyloxy group having 1 to 20 carbon atoms, a substituted or unsubstituted aryloyloxy group having 7 to 30 carbon atoms, a substituted or unsubstituted alkylsilyl group having 1 to 20 carbon atoms, or a group in which a divalent group (one or more groups selected from the group consisting of a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, and an ether group) is bonded to any of these groups; R 12 is an unsubstituted cyclic aliphatic hydrocarbon group having 3 to 14 carbon atoms; and p is an integer of 0 to 4.) (in formula (3), R is the same as defined above; R′ and X are each independently a hydrogen atom, a hydroxyl group, a cyano group, a nitro group, a substituted or unsubstituted hetero-cyclic group, a halogen atom, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, a substituted or unsubstituted branched aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted cyclic aliphatic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted amino group having 0 to 20 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms, a substituted or unsubstituted acyl group having 1 to 20 carbon atoms, a substituted or unsubstituted alkoxycarbonyl group having 2 to 20 carbon atoms, a substituted or unsubstituted alkyloyloxy group having 1 to 20 carbon atoms, a substituted or unsubstituted aryloyloxy group having 7 to 20 carbon atoms, a substituted or unsubstituted alkylsilyl group having 1 to 20 carbon atoms, or a group in which a divalent group (one or more groups selected from the group consisting of a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, and an ether group) is bonded to any of these groups, provided that the compound represented by the formula (3) differs from any of the compound (ctt form) represented by the formula (1) and stereoisomers thereof). 2. The resist composition according to claim 1 , wherein, in the formula (1), R is a hydrogen atom. 3. The resist composition according to claim 1 , wherein, in the formula (1), p is 1. 4. The resist composition according to claim 3 , wherein the compound represented by the formula (1) is represented by the following formula (X): 5. The resist composition according to claim 1 , wherein, in the formula (3), R′ is represented by the following formula (2): (in formula (2), R 4 are each independently a hydroxyl group, a cyano group, a nitro group, a substituted or unsubstituted heterocyclic group, a halogen atom, a substituted or unsubstituted linear aliphatic hydrocarbon group having 1 to 14 carbon atoms, a substituted or unsubstituted branched aliphatic hydrocarbon group having 3 to 14 carbon atoms, a substituted cyclic aliphatic hydrocarbon group having 3 to 14 carbon atoms, a substituted or unsubstituted aryl group having 6 to 14 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 14 carbon atoms, or a substituted or unsubstituted alkylsilyl group having 1 to 14 carbon atoms; and q is an integer of 0 to 5). 6. The resist composition according to claim 1 , wherein in the formula (3), R is a hydrogen atom. 7. The resist composition according to claim 1 , wherein the compound represented by the formula (3) comprises 70 mol % or more of a ctt form or a ccc form thereof. 8. The resist composition according to claim 1 , wherein the compound represented by the formula (3) is at least one selected from the following compound group: 9. The resist composition according to claim 1 , further comprising an acid generating agent (C) capable of generating an acid directly or indirectly by irradiation with any one radiation selected from the group consisting of visible light, ultraviolet, excimer laser, electron beam, extreme ultraviolet (EUV), X-ray, and ion beam. 10. The resist composition according to claim 1 , further comprising an acid diffusion controlling agent (E). 11. The resist composition according to claim 1 , wherein the resist composition further comprises an acid generating agent (C) and an acid diffusion controlling agent (E), and wherein a ratio of the resist base material, the acid generating agent (C), the acid crosslinking agent (G), the acid diffusion controlling agent (E), and an optional component (F) (resist base material/acid generating agent (C)/acid crosslinking agent (G)/acid diffusion controlling agent (E)/optional component (F)) in the solid component is from 20 to 99.498/from 0.001 to 49/from 0.5 to 49/from 0.001 to 49/from 0 to 49, based on % by mass. 12. The resist composition according to claim 1 , capable of forming an amorphous film by spin coating. 13. The resist composition according to claim 12 , wherein a dissolution rate of the amorphous film in a developing solution at 23° C. is 10 angstrom/sec or more. 14. The resist composition according to claim 12 , wherein a dissolution rate of the amorphous film irradiated with KrF excimer laser, extreme ultraviolet, electron beam or X-ray, or the amorphous film heated at 20 to 250°

Assignees

Inventors

Classifications

  • the macromolecular compound having an alicyclic moiety in a side chain · CPC title

  • the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

  • the macromolecular compound having a backbone with alicyclic moieties · CPC title

  • using a scanning corpuscular radiation beam, e.g. an electron beam · CPC title

  • G03F7/0045Primary

    with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

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What does patent US9785048B2 cover?
The resist composition according to the present invention is a resist composition comprising a solid component comprising a resist base material, and a solvent. In the resist composition according to the present invention, the resist composition contains 1 to 80% by mass of the solid component and 20 to 99% by mass of the solvent, the resist base material comprises a compound (ctt form) represe…
Who is the assignee on this patent?
Mitsubishi Gas Chemical Co
What technology area does this patent fall under?
Primary CPC classification G03F7/0045. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).