Method for implementing low dose implant in a plasma system

Patent metadata

Field	Value
Publication number	US-9783884-B2
Application number	US-201414193758-A
Country	US
Kind code	B2
Filing date	Feb 28, 2014
Priority date	Mar 14, 2013
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

Methods of decreasing the dose per pulse implanted into a workpiece disposed in a process chamber are disclosed. According to one embodiment, the plasma is generated by a RF power supply. This RF power supply may have two different modes, a first, referred to as continuous wave mode, where the RF power supply is continuously outputting a voltage. This mode allows creation of the plasma within the process chamber. During the second mode, referred to as pulsed plasma mode, the RF power supply outputs two different power levels. The platen bias voltage may be a more negative value when the lower RF power level is being applied. This pulsed (or multi-setpoint) plasma also assists in reducing dopant deposition on the wafer during the time when CW plasma is on but the bias voltage pulse is in the off-state. In a further embodiment, a delay is introduced between the transition to the pulsed plasma mode and the initiation of the implanting process. In yet another embodiment the plasma is generated at a location in the chamber more judicious to reducing the dose impinging on the wafer, thereby increasing the process time to allow adequate control of the process.

First claim

What is claimed is:

1. A method of implanting a workpiece disposed in a process chamber, comprising:
applying continuous wave (CW) RF power to a plasma coil and creating a plasma in said process chamber;
maintaining the CW RF power applied to the plasma coil for a first predetermined period;
transitioning said CW RF power to a pulsed RF power after said first predetermined period to reduce a concentration of ions in said plasma, wherein at least a first RF power level and a second lower RF power level are repeatedly generated, causing said plasma to vary in ion concentration as a function of time, wherein said transitioning to said pulsed RF power occurs after a first bias voltage pulse is applied to said workpiece, and wherein substantially no ions are implanted into said workpiece as a result of the first bias voltage pulse being applied to said workpiece;
maintaining the pulsed RF power applied to the plasma coil for a second predetermined period; and
initiating implanting ions from said plasma into said workpiece after said second predetermined period by applying a negative bias voltage to said workpiece while maintaining the pulsed RF power applied to the plasma coil.

2. The method of claim 1 , wherein two different bias voltages are alternatingly applied to said workpiece after said second predetermined period, wherein a more negative bias voltage is applied to said workpiece when said second lower RF power level is generated.

3. The method of claim 2 , wherein a more positive bias voltage is applied to said workpiece when said first RF power level is generated.

4. The method of claim 1 , wherein a voltage of said first bias voltage pulse is less negative than said negative bias voltage.

5. The method of claim 4 , wherein bias pulses are applied to said workpiece during said second predetermined period, wherein voltages of said bias pulses are less negative than said negative bias voltage.

6. The method of claim 5 , wherein voltages of said bias pulses during said second predetermined period are equal.

7. The method of claim 5 , wherein voltages of said bias pulses during said second predetermined period become more negative over time.

8. The method of claim 1 , wherein said negative bias voltage is applied for a first time duration and wherein said first bias voltage pulse is of a shorter time duration than said first time duration.

9. The method of claim 1 , wherein said first predetermined period and said second predetermined period comprise times needed for conditions to stabilize in said process chamber after a change in RF power.

10. The method of claim 9 , wherein said conditions comprise chamber pressure and matching circuit behavior.

11. A method of implanting a workpiece disposed in a process chamber, comprising:
creating a plasma in said process chamber by applying a continuous wave (CW) RF power to a plasma coil;
switching from the CW RF power to a RF power supply in a pulsed plasma mode after said plasma is created and after conditions stabilize in said process chamber to reduce a concentration of ions in said plasma, wherein, in said pulsed plasma mode, said RF power supply repeatedly generates at least a first RF power level and a second lower RF power level, causing said plasma to vary in ion concentration as a function of time;
applying a first bias voltage pulse to said workpiece after said plasma is created, wherein application of said first bias voltage pulse causes a controller to direct said RF power supply to operate in said pulsed plasma mode, and wherein substantially no ions are implanted into said workpiece as a result of the first bias voltage pulse being applied to said workpiece;
waiting a time period; and
initiating implanting ions from said plasma into said workpiece after said time period by applying a first negative bias voltage to said workpiece when said second lower RF power level is generated and applying a second bias voltage, less negative than said first negative bias voltage, to said workpiece when said first RF power level is generated.

12. The method of claim 11 , wherein a voltage of said first bias voltage pulse is less negative than said first negative bias voltage.

13. A method of implanting a workpiece disposed in a process chamber, wherein said process chamber comprises a top cover with coils disposed thereon, comprising:
creating a plasma in said process chamber by applying a continuous wave RF power to said coils;
waiting a first time period for conditions within said process chamber to stabilize after creating said plasma;
switching from the continuous wave RF power, after said first time period, to a pulsed RF power whereby a first RF power and a second RF power of the pulsed RF power are applied to said coils in an alternating manner, the second RF power being less than said first RF power, wherein said application of the first RF power and the second RF power to said coils is initiated, by a controller, by applying a first bias voltage pulse to said workpiece, and wherein substantially no ions are implanted into said workpiece as a result of the first bias voltage pulse being applied to said workpiece;
waiting a second time period for conditions within said process chamber to stabilize after said applying; and
initiating implanting ions from said plasma into said workpiece after said second time period by pulsing a negative bias voltage to said workpiece, wherein a temporal relationship exists between said negative bias voltage pulsed to said workpiece and said RF power applied to said coils so that a more negative bias voltage is applied to said workpiece when said second RF power is applied to said coils.

14. The method of claim 13 , wherein said top cover comprises an upper horizontal surface, vertical walls and horizontal walls, wherein coils are disposed on said vertical walls and said horizontal walls, wherein said applying further comprises applying RF power only to coils disposed on said vertical walls.

15. The method of claim 14 , wherein a voltage of said first bias voltage pulse is less negative than said negative bias voltage.

16. The method of claim 13 , wherein a duration of said first bias voltage pulse is less than a duration of said negative bias voltage pulsed to said workpiece.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Koo Ilwoong
• Lee Jun
• Srivastava Aseem K

Classifications

• H01J2237/3365

  Plasma source implantation · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title

• H01J37/32128

  using particular waveforms, e.g. polarised waves · CPC title

• C23C14/54 Primary

  Controlling or regulating the coating process · CPC title

• H01J37/32412

  Plasma immersion ion implantation · CPC title