Apparatus for controlling insulating gate-type semiconductor element, and power conversion apparatus using apparatus for controlling insulating gate-type semiconductor element

Patent metadata

Field	Value
Publication number	US-9780660-B2
Application number	US-201314889850-A
Country	US
Kind code	B2
Filing date	May 10, 2013
Priority date	May 10, 2013
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

An apparatus is adapted to drive an insulating gate-type semiconductor element by a first control voltage and a second control voltage, that are supplied to a first insulating gate and a second insulating gate, respectively, and includes a first noise filter inputting a signal about current that passes through the insulating gate-type semiconductor element, a first comparator making a comparison between an output signal of the first noise filter and a first reference signal and outputting a first comparison result, a first control voltage output circuit, and a second control voltage output circuit, the second control voltage output circuit being adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element, the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced.

First claim

The invention claimed is:

1. An apparatus for controlling an insulating gate-type semiconductor element provided with a first insulating gate and a second insulating gate, the apparatus being adapted to drive the insulating gate-type semiconductor element by a first control voltage and a second control voltage that are supplied to the first insulating gate and the second insulating gate, respectively, and comprising:
a current detector comprising a sensing portion of the insulating gate-type semiconductor element and a sensing resistance, the current detector outputting a signal about current that passes through the insulating gate-type semiconductor element;
a first noise filter inputting the signal which the current detector outputs;
a first comparator making a comparison between an output signal of the first noise filter and an output signal of a first reference voltage source and outputting a first comparison result;
a first control voltage output circuit; and
a second control voltage output circuit,
wherein the second control voltage output circuit is adapted to reduce the second control voltage when it is determined from the first comparison result that overcurrent passes through the insulating gate-type semiconductor element; the first control voltage output circuit being adapted to reduce the first control voltage after the second control voltage is reduced,
wherein the apparatus further includes a second noise filter inputting the signal which the current detector outputs, and a second comparator making a comparison between an output signal of the second noise filter and an output signal of a second reference voltage source and outputting a second comparison result, and
wherein the second control voltage output circuit is adapted to reduce the second control voltage when it is determined from the second comparison result that the overcurrent passes through the insulating gate-type semiconductor element.

2. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 , wherein a time constant of the second noise filter is larger than a time constant of the first noise filter.

3. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 , wherein if it is determined from the first comparison result that the overcurrent passes through the insulating gate-type semiconductor and unless it is determined from the second comparison result that the overcurrent passes through the insulating gate-type semiconductor element, the second control voltage output circuit is adapted to increase the second control voltage.

4. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 , wherein the first control voltage output circuit is adapted to step-wise reduce the first control voltage.

5. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 , wherein the first insulating gate comprises a first section and a second section, and wherein the first control voltage that is supplied to the first section is reduced earlier than the first control voltage that is supplied to the second section.

6. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 , wherein the signal which the current detector outputs is inputted to the second noise filter via the first noise filter.

7. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 , wherein the first control voltage output circuit is adapted to reduce the first control voltage if it is determined from the first comparison result that the overcurrent passes through the insulating gate-type semiconductor element during a predetermined time.

8. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 7 , wherein the second control voltage output circuit is adapted to increase the second control voltage if it is determined that the overcurrent passes through the insulating gate-type semiconductor element during time shorter than the predetermined time.

9. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 , wherein the current detector is adapted to output the signal about the current passing through the insulating gate-type semiconductor element, on the basis of voltages at both ends of a sense resistor that is connected to the insulating gate-type semiconductor element.

10. The apparatus for controlling the insulating gate-type semiconductor, according to claim 1 , wherein the current detector is adapted to output the signal about the current passing through the insulating gate-type semiconductor element, on the basis of a collector voltage of the insulating gate-type semiconductor element.

11. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 , wherein the current detector is adapted to output the signal about the current passing through the insulating gate-type semiconductor element, on the basis of a voltage of the first insulating gate of the insulating gate-type semiconductor element.

12. The apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 , wherein a magnitude of the output signal of the first reference voltage source and a magnitude of the output signal of the second reference voltage source are the same.

13. A power conversion apparatus comprising:
a pair of direct current terminals;
alternating current terminals, the number of which is equal to the phase number of an alternating current;
a plurality of semiconductor switching elements disposed between the direct current terminals and the alternating current terminals;
a plurality of diodes connected to the plurality of semiconductor switching element in reverse parallel; and
a plurality of gate drive apparatuses driving the plurality of semiconductor switching element; wherein each of the plurality of semiconductor switching elements is an insulating gate-type semiconductor element provided with a first insulating gate and a second insulating gate, and each of the plurality of gate drive apparatuses is provided with the apparatus for controlling the insulating gate-type semiconductor element, according to claim 1 .

Assignees

• Hitachi Ltd

Inventors

• Hashimoto Takayuki
• Mori Mutsuhiro

Classifications

• H02M1/32 Primary

  Means for protecting converters other than automatic disconnection · CPC title

• H03K2217/0036

  Means reducing energy consumption · CPC title

• H03K17/168

  in composite switches · CPC title

• H01L29/786

  Electricity · mapped topic

• H03K17/0828

  in composite switches · CPC title